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公开(公告)号：US20220410299A1
公开(公告)日：2022-12-29
申请号：US17808908
申请日：2022-06-24
摘要： The present invention relates to a method for producing a metal-ceramic substrate. The method has the following steps: providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, wherein the solder material has: a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal; and heating the stack, wherein at least one of the following conditions is satisfied: the high temperature heating duration is no more than 60 min; the peak temperature heating duration is no more than 30 min; the heating duration is no more than 60 min.
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2.发明申请公开(公告)号：US20170133291A1
公开(公告)日：2017-05-11
申请号：US15319281
申请日：2015-05-12
IPC分类号： H01L23/29 , H01L23/467 , H01L23/473 , H01L23/373
CPC分类号： H01L23/291 , H01L23/3135 , H01L23/367 , H01L23/3731 , H01L23/3735 , H01L23/467 , H01L23/473 , H01L24/40 , H01L24/48 , H01L2224/32225 , H01L2224/40225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73263 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/19107 , H01L2924/00012 , H01L2224/45099 , H01L2224/37099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor module (10) contains a ceramic interconnect device (50) having at least one semiconductor component (20). The at least one semiconductor component (20) is covered by an encapsulating compound (30) which contains a cured inorganic cement and has a thermal expansion coefficient in the range of 2 to 10 ppm/K. The ceramic of the ceramic interconnect device (50) is selected from ceramics based on aluminum oxide, aluminum nitride or silicon nitride.
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3.发明申请公开(公告)号：US20180261518A1
公开(公告)日：2018-09-13
申请号：US15974930
申请日：2018-05-09
IPC分类号： H01L23/29 , H01L23/473 , H01L23/373 , H01L23/467
摘要： A semiconductor module (10) contains a ceramic interconnect device (50) having at least one semiconductor component (20). The at least one semiconductor component (20) is covered by an encapsulating compound (30) which contains a cured inorganic cement and has a thermal expansion coefficient in the range of 2 to 10 ppm/K. The ceramic of the ceramic interconnect device (50) is selected from ceramics based on aluminum oxide, aluminum nitride or silicon nitride.
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公开(公告)号：US20240025148A1
公开(公告)日：2024-01-25
申请号：US18044155
申请日：2021-09-01
CPC分类号： B32B13/06 , B32B15/20 , B32B13/02 , B32B37/15 , B32B2307/7376 , B32B2457/00 , B32B2311/12 , B32B2315/06 , B32B2250/42 , B32B2264/1021 , B32B2264/1023 , B32B2309/02
摘要： Laminar structure comprising two outwardly facing metal layers with an interposed alternating layer sequence made up of n layers of a hydraulically cured inorganic cement composition and n−1 metal layers, where n=1, 2, or 3.
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5.发明公开公开(公告)号：US20240006191A1
公开(公告)日：2024-01-04
申请号：US18255299
申请日：2020-12-23
发明人： Markus SCHEIBEL , Stefan MAUSNER , Sungsig KANG , Martin SATTLER , Anton-Zoran MIRIC , Li-San CHAN
CPC分类号： H01L21/568 , C04B28/04 , C04B28/06 , C04B28/105 , H01L23/291 , C04B2111/00844
摘要： A process for the manufacture of encapsulated semiconductor dies and/or of encapsulated semiconductor packages or for the manufacture of an encapsulation of semiconductor dies and/or of semiconductor packages comprising the steps: (1) assembling a multitude of bare semiconductor dies on a temporary carrier, and (2) encapsulating the assembled bare semiconductor dies, characterized in that an aqueous hydraulic hardening inorganic cement preparation is applied as encapsulation agent in step (2).
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公开(公告)号：US20220411339A1
公开(公告)日：2022-12-29
申请号：US17808919
申请日：2022-06-24
IPC分类号： C04B37/02 , C04B35/10 , C04B35/584 , C04B35/581
摘要： The invention relates to a method for producing a metal-ceramic substrate and to a furnace suitable for carrying out the method. With the method, a metal-ceramic substrate with increased thermal and current conductivity can be obtained. The method comprises the steps of providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, the solder material comprising a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal, and heating the stack, the stack passing through a heating zone for heating.
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