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公开(公告)号：US20250098479A1
公开(公告)日：2025-03-20
申请号：US18291759
申请日：2023-02-28
Inventor： Can Yuan , Yongqian Li , Cheng Xu , Dandan Zhou , Ning Liu
IPC: H10K59/80 , H10K59/122 , H10K59/131
Abstract: A display substrate is provided. The display substrate includes a planarization layer; a light emitting element on the planarization layer, including a first electrode, an organic layer on the first electrode, and a second electrode on a side of the organic layer away from the first electrode; an auxiliary electrode in a layer different from the second electrode; one or more first connecting structures electrically connecting the auxiliary electrode with the second electrode, respectively; and one or more second connecting structures electrically connecting the auxiliary electrode with the second electrode, respectively; wherein a respective first connecting structure of the one or more first connecting structures includes a conductive channel including a sintered conductive material; and the conductive channel is absent in the one or more second connecting structures.
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公开(公告)号：US20240251636A1
公开(公告)日：2024-07-25
申请号：US18005676
申请日：2022-02-28
Inventor： XinXin Wang , Dacheng Zhang , Ning Liu , Yu Wang , Bin Zhou , Can Yuan
IPC: H10K59/80 , H10K59/12 , H10K59/124
CPC classification number: H10K59/80522 , H10K59/1201 , H10K59/124
Abstract: An OLED display panel includes a base substrate and an OLED device on the base substrate. The OLED device includes: an auxiliary electrode in the non-light-emitting region, the auxiliary electrode includes a conductive layer and a conductive column on a side of the conductive layer away from the base substrate, and an orthographic projection of the conductive column on the base substrate is within an orthographic projection of the conductive layer on the base substrate; and an insulating layer between the conductive layer and the base substrate; a groove is arranged on a surface of the insulating layer away from the base substrate, and an orthographic projection of the groove on the base substrate at least partially overlaps with the orthographic projection of the isolation structure on the base substrate.
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公开(公告)号：US12219791B2
公开(公告)日：2025-02-04
申请号：US17635216
申请日：2021-04-21
Inventor： Can Yuan , Yongqian Li , Bin Zhou , Ning Liu , Zhidong Yuan
IPC: H01L29/08 , H10K50/824 , H10K59/121 , H10K59/131 , H10K71/00
Abstract: The present disclosure provides a display substrate, a manufacturing method thereof, and a display device. The display substrate includes a substrate, and a compensation electrode, an auxiliary electrode, a light-emitting functional layer, and a cathode layer arranged on one side of the substrate. The auxiliary electrode is arranged on one side of the compensation electrode away from the substrate, and coupled to the compensation electrode. A first notch is formed in a side surface of the auxiliary electrode, and at least a part of the first notch extends in a direction parallel to the substrate. The light-emitting functional layer is arranged on one side of the auxiliary electrode away from the substrate, and interrupted at the first notch. The cathode layer is arranged on one side of the light-emitting functional layer away from the substrate, and coupled to the auxiliary electrode at the first notch.
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公开(公告)号：US20240276818A1
公开(公告)日：2024-08-15
申请号：US18023447
申请日：2022-03-16
Inventor： Ning Liu , Can Yuan , Xinxin Wang , Yu Wang , Bin Zhou , Dacheng Zhang , Liangchen Yan
IPC: H10K59/131 , H10K59/12 , H10K59/122 , H10K71/16 , H10K71/60 , H10K102/00
CPC classification number: H10K59/1315 , H10K59/1201 , H10K59/122 , H10K71/16 , H10K71/60 , H10K2102/3026
Abstract: The present disclosure provides a display substrate, a manufacturing method thereof and a display device. The display substrate includes: a substrate structure including a base substrate; and a light-emitting structure, a pixel defining layer and a connection structure wherein the light-emitting structure includes a conductive structure layer, a first light-emitting layer and a first electrode layer. The connection structure includes a first conductive layer, a second conductive layer and a top structure, wherein an orthographic projection of the second conductive layer on the base substrate is inside an orthographic projection of the top structure on the base substrate, and the top structure includes a second light-emitting layer, wherein an orthographic projection of the first light-emitting layer on the base substrate partially overlaps with an orthographic projection of the second light-emitting layer on the base substrate.
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公开(公告)号：US11469394B2
公开(公告)日：2022-10-11
申请号：US17051323
申请日：2020-03-02
Inventor： Leilei Cheng , Tongshang Su , Qinghe Wang , Guangyao Li , Wei Song , Ning Liu , Yang Zhang , Yongchao Huang
Abstract: The present invention relates to the field of display technologies, and provides an array substrate, a manufacturing method thereof, and a display device. The array substrate includes a first electrode layer. The first electrode layer may include an indium tin oxide layer and a planarization layer. The indium tin oxide layer is disposed on a substrate and includes indium tin oxide particles; the planarization layer is disposed on a side of the indium tin oxide layer away from the substrate, and fills at least part of gaps between the indium tin oxide particles, and the planarization layer can conduct electricity.
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Patent Agency Ranking
公开(公告)号：US11347148B2
公开(公告)日：2022-05-31
申请号：US16086990
申请日：2018-02-12
Inventor： Wei Li , Bin Zhou , Jun Liu , Ning Liu , Yang Zhang , Yingbin Hu
Abstract: A patterning method and a method for manufacturing an array substrate are provided, and the patterning method includes: forming a photolithography auxiliary film and a positive photoresist film in turn on a base substrate provided with a layer to be patterned; subjecting the photolithography auxiliary film and the positive photoresist film to a photolithography process to form a photolithography auxiliary layer pattern and a positive photoresist pattern; patterning the layer to be patterned; and UV irradiating the photolithography auxiliary layer pattern and the positive photoresist pattern and then removing the photolithography auxiliary layer pattern and the positive photoresist pattern.
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公开(公告)号：US11069725B2
公开(公告)日：2021-07-20
申请号：US16399508
申请日：2019-04-30
IPC: H01L27/12 , H01L21/311 , H01L21/3213
Abstract: A display substrate and a method of preparing the same, and a display device are provided, the method including: providing a substrate; forming a switching thin film transistor precursor and a driving thin film transistor precursor on the substrate, each including a semiconductor layer, a gate insulating material layer and a gate metallic layer stacked sequentially above the substrate; forming a photoresist layer above the switching thin film transistor precursor and the driving thin film transistor precursor, and forming an etching mask from the photoresist layer, a first portion of the etching mask at the switching thin film transistor precursor and a second portion of the etching mask at the driving thin film transistor precursor having different shapes; and forming a switching thin film transistor and a driving thin film transistor, by etching processing the switching thin film transistor precursor and the driving thin film transistor precursor with the etching mask.
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8.发明申请公开(公告)号：US20210167181A1
公开(公告)日：2021-06-03
申请号：US16767247
申请日：2019-12-18
Inventor： Tongshang Su , Dongfang Wang , Qinghe Wang , Ning Liu , Yongchao Huang , Yu Ji , Zheng Wang , Liangchen Yan
IPC: H01L29/423 , H01L29/786 , H01L29/49 , H01L29/66 , H01L29/40
Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor is formed on a substrate and includes: an active layer on the substrate, the active layer including a source region, a drain region, and a channel region between the source region and the drain region; a first gate electrode on a side of the active layer away from the substrate; and a second gate electrode on a side of the first gate electrode away from the substrate, wherein a thickness of the first gate electrode is smaller than a thickness of the second gate electrode.
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9.发明申请公开(公告)号：US20200152458A1
公开(公告)日：2020-05-14
申请号：US16442830
申请日：2019-06-17
Inventor： Wei Song , Ce Zhao , Heekyu Kim , Ning Liu , Yuankui Ding , Wei Li , Yingbin Hu
Abstract: A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and suppling a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.
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公开(公告)号：US20170221924A1
公开(公告)日：2017-08-03
申请号：US15221222
申请日：2016-07-27
Applicant: BOE Technology Group Co., Ltd.
Inventor： Tongshang Su , Shengping Du , Ning Liu , Dongfang Wang , Guangcai Yuan
CPC classification number: H01L27/127 , H01L27/1225 , H01L27/1288 , H01L29/66969
Abstract: A method for manufacturing a thin-film transistor (TFT), an array substrate and a display device are disclosed. The manufacturing method includes: forming a photoresist layer provided with a completely retained region, a partially-retained region and a completely removed region on a metal film by a half-tone mask process; forming a source/drain metal layer by etching the metal film under the cover of the photoresist layer; removing the photoresist layer in the partially-retained region; forming an active layer by patterning the semiconductor film; and removing residual photoresist layer.
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