摘要:
In order to provide an inertial sensor such as an acceleration sensor which can be downsized and in which a high SNR can be obtained as having a plurality of measurement ranges, an inertial sensor for detecting an inertial force of acceleration based on an electrostatic capacitance change of a detecting unit includes a plurality of detecting units D1 to D4 each having a different sensitivity defined by a ratio between an applied inertial force and physical quantity generated from each of the detecting units to provide the plurality of measurement ranges. Alternatively, when the inertial sensor includes N (a natural number of 2 or larger) pieces of movable units 6a to 6c, (N+1) or more types of measurement ranges are provided.
摘要:
As well as achieving both downsizing and thickness reduction and sensitivity improvement of a semiconductor device that has: a MEMS sensor formed by bulk micromachining technique such as an acceleration sensor and an angular rate sensor; and an LSI circuit, a packaging structure of the semiconductor device having the MEMS sensor and the LSI circuit can be simplified. An integrated circuit having MISFETs and wirings is formed on a silicon layer of an SOI substrate, and the MEMS sensor containing a structure inside is formed by processing a substrate layer of the SOI substrate. In other words, by using both surfaces of the SOI substrate, the integrated circuit and the MEMS sensor are mounted on one SOI substrate. The integrated circuit and the MEMS sensor are electrically connected to each other by a through-electrode provided in the SOI substrate.
摘要:
An inertial sensor capable of making pressure of a space in which an inertial sensor such as an acceleration sensor is placed to be higher than that during a sealing step and improving reliability is provided. The inertial sensor can be achieved by means of making an inertial sensor including a substrate, a movable portion on the substrate, a cap member which seals the movable portion so as to cover the movable portion, wherein a gas-generating material is applied to the movable portion side of the cap.
摘要:
In order to provide an inertial sensor capable of suppressing a wrong diagnosis even in an adverse environment such that sudden noise occurs, an inertial sensor is provided with a movable part (105), a first detection unit (C1, C2) for detecting the amount of displacement of the movable part (105), a forced vibration means (503, C3, C4) for forcedly vibrating the movable part (105) by applying a diagnosis signal, a physical quantity calculation unit (502) for calculating the physical quantity from a detection signal from the first detection unit (C1, C2), and an abnormality determination unit (504) for determining the presence or absence of the abnormality for the physical quantity using the diagnosis signal obtained via the first detection unit (C1, C2), and is used within a vehicle, the inertial sensor further comprising a second sensor (510) mounted in the same vehicle and connected to the abnormality determination unit (504).
摘要:
A technique in which a false detection and a wrong diagnosis can be suppressed in a capacitance sensor represented by an acceleration sensor is provided. A first capacitative element and a second capacitative element, which configure a capacitance detection unit, and a third capacitative element and a fourth capacitative element, which configure a forced oscillation generation unit, are electrically separated from each other. That is, the diagnosis movable electrode that configures the third capacitative element and the fourth capacitative element is formed integrally with the movable part. On the other hand, the diagnosis fixed electrode and the diagnosis fixed electrode are electrically separated from the detection fixed electrode and the detection fixed electrode.
摘要:
Techniques capable of suppressing fixation between a movable electrode and a fixed electrode in an inertial sensor and preventing the inertial sensor from malfunctioning are provided. The movable electrode, the fixed electrode provided so as to face the movable electrode, a peripheral conductor facing both the movable electrode and the fixed electrode, and a demodulation circuit and a voltage adjustment circuit which adjust the electric potential of the peripheral conductor so that the electric potential of the peripheral conductor becomes the same as the electric potential of the movable electrode are provided, and a change in the capacitance between the movable electrode and the fixed electrode is detected.
摘要:
Provided is an angular velocity sensor including a plurality of angular velocity detection units each outputting a different detection result, and including a common driving circuit to drive the angular velocity detection units. The angular velocity detection units of the angular velocity sensor of the present invention are configured to have different driving amplitudes when being driven by a driving signal at the same frequency.
摘要:
A semiconductor physical quantity detection sensor includes (1) a first electrostatic capacitance formed by the movable electrode, and a first fixed electrode formed in a first conductive layer shared with the movable electrode, (2) a second electrostatic capacitance that is formed by the movable electrode, and a second fixed electrode formed in a second conductive layer different in a height from a substrate surface from the movable electrode, and (3) an arithmetic circuit that calculates the physical quantity on the basis of a change in the first and second electrostatic capacitances generated when the physical quantity is applied. In this configuration, an electric signal from the first electrostatic capacitance, and an electric signal from the second electrostatic capacitance are input to the arithmetic circuit.
摘要:
To provide a combined sensor that can detect a plurality of physical quantities. With the combined sensor, it is possible to realize, while maintaining performance, a reduction in size and a reduction in costs by increasing elements that can be shared among respective sensors. A weight M2 and a detection electrode DTE2 used in an angular-velocity detecting section are also used as a reference capacitive element of a Z-direction-acceleration detecting section configured to detect acceleration in a Z direction. That is, in the Z-direction-acceleration detecting section, a detection capacitive element including the weight M2 and the detection electrode DTE2 configuring the angular-velocity detecting section is used as a reference capacitive element for a detection capacitive element formed by a detection electrode DTE5 and a weight M4.
摘要:
Provided is an inertial sensor device comprising a detection part having an MEMS structure, wherein convenience during sensor installation is ensured while erroneous operation caused by the application of external vibration is controlled. To achieve this objective, an anti-vibration structure (103) is provided in the inertial sensor device, between a semiconductor chip (102) mounted on a package substrate and a semiconductor chip (104) comprising a sensor detection part. The anti-vibration structure (103) has a structure in which the periphery of an anti-vibration part (103a) is surrounded by an anti-vibration part (103b) comprising a material having a larger Young's modulus.