公开(公告)号：US20130043442A1

公开(公告)日：2013-02-21

申请号：US13569983

申请日：2012-08-08

申请人： Taichiroo KONNO ,  Hajime FUJIKURA ,  Michiko MATSUDA

发明人： Taichiroo KONNO ,  Hajime FUJIKURA ,  Michiko MATSUDA

IPC分类号： C30B25/14 ,  B01J10/00 ,  H01B1/06

CPC分类号： H01L21/0262 ,  C30B25/08 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02581 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36

摘要： A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate.

摘要翻译： 金属氯化物气体发生器包括：管式反应器，包括用于在上游侧接收金属的接收部分和生长基底放置在下游侧的生长部分; 气体入口管，其布置成从具有通过接收部的气体入口的上游端延伸到生长部分，用于从上游端引入气体以将气体供应到接收部分，并且供应由 接收部分中的气体和金属与生长部分之间的反应; 以及放置在反应器中以将上游端与生长部分进行热屏蔽的隔热板。 进气管在上游端和隔热板之间弯曲。

公开(公告)号：US20130001644A1

公开(公告)日：2013-01-03

申请号：US13524300

申请日：2012-06-15

申请人： Hajime FUJIKURA ,  Taichiroo KONNO ,  Michiko MATSUDA

发明人： Hajime FUJIKURA ,  Taichiroo KONNO ,  Michiko MATSUDA

IPC分类号： H01L29/20

CPC分类号： H01L29/872 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66212 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.

摘要翻译： 提供了具有C面作为表面的III族氮化物半导体层的氮化物半导体外延衬底，其经由包含Al的III族氮化物半导体的缓冲层在衬底上生长，其中缓冲层在其上具有反转畴 表面。

公开(公告)号：US20130048942A1

公开(公告)日：2013-02-28

申请号：US13571535

申请日：2012-08-10

申请人： Taichiroo KONNO ,  Hajime Fujikura

发明人： Taichiroo KONNO ,  Hajime Fujikura

IPC分类号： H01L29/205 ,  H01L33/04

CPC分类号： H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20

摘要： A nitride semiconductor template includes a substrate, and a group III nitride semiconductor layer having an oxygen-doped layer formed on the substrate, and a silicon-doped layer formed on the oxygen-doped layer. A total thickness of the group III nitride semiconductor layer is not smaller than 4 μm and not greater than 10 μm, and an average silicon carrier concentration in the silicon-doped layer is not lower than 1×1018 cm−3 and not higher than 5×1018 cm−3.

摘要翻译： 氮化物半导体模板包括衬底和在衬底上形成有氧掺杂层的III族氮化物半导体层和形成在氧掺杂层上的硅掺杂层。 III族氮化物半导体层的总厚度不小于4μm并且不大于10μm，并且硅掺杂层中的平均硅载流子浓度不低于1×1018cm-3且不高于5 ×1018厘米-3。

公开(公告)号：US20080099773A1

公开(公告)日：2008-05-01

申请号：US11955063

申请日：2007-12-12

申请人： Taichiroo KONNO ,  Masahiro ARAI

发明人： Taichiroo KONNO ,  Masahiro ARAI

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/02

摘要： In a light emitting diode, a light-emitting region is including an active layer provided between a first conductivity type cladding layer formed on the semiconductor substrate and a second conductivity type cladding layer. A transparent conductive film made of a metal oxide is located over the light-emitting region. A layer for preventing exfoliation of the transparent conductive film, the preventing layer being made of a compound semiconductor contains at least aluminum and is located between the light-emitting region and the transparent conductive film. The layer for preventing exfoliation of the transparent conductive film contains a conductivity type determining impurity in a concentration of 1×1019 cm−3 or higher.

摘要翻译： 在发光二极管中，发光区域包括设置在形成在半导体衬底上的第一导电型包覆层和第二导电型包覆层之间的有源层。 由金属氧化物构成的透明导电膜位于发光区域的上方。 作为防止透明导电膜脱落的层，由化合物半导体形成的防止层至少含有铝，位于发光区域和透明导电膜之间。 用于防止透明导电膜剥离的层含有浓度为1×10 9 -3 -3以上的导电型确定杂质。

公开(公告)号：US20110079800A1

公开(公告)日：2011-04-07

申请号：US12706300

申请日：2010-02-16

申请人： Taichiroo KONNO

发明人： Taichiroo KONNO

IPC分类号： H01L33/00

CPC分类号： H01L33/10 ,  H01L33/14

摘要： A light emitting element according to an embodiment of the invention includes a semiconductor substrate, a light emitting part having a first conductivity type first cladding layer; a second conductivity type second cladding layer different from the first cladding layer in the conductivity type and an active layer sandwiched between the first cladding layer and the second cladding layer, a reflecting part for reflecting a light emitted from the active layer, disposed between the semiconductor substrate and the light emitting part so as to have a thickness of 1.7 μm to 8.0 μm and an electric current dispersing layer disposed on a side of the light emitting part opposite to the reflecting part, having a uneven part on the surface thereof, wherein the reflecting part is formed so as to have at least three pair layers formed of a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer, the first semiconductor layer has a thickness TA defined by the formula (1), if peak wavelength of the light emitted from the active layer is λP, refractive index of the first semiconductor layer is nA, refractive index of the second semiconductor layer is nB, refractive index of the first cladding layer is nIn, and incident angle of light to the second semiconductor layer is θ, the second semiconductor layer has a thickness TB defined by the formula (2), and a plurality of pair layers of the reflecting part have a different thickness to each other according as values of the incident angle of light θ in the formulae (1) and (2) are different with respect to each pair layer, and at least one pair layer includes the first semiconductor layer and the second semiconductor layer defined by that the incident angle of light θ is not less than 50 degrees. T A = λ p 4  n A  1 - ( n In  sin   θ n A ) 2 ( 1 ) T B = λ p 4  n B  1 - ( n In  sin   θ n B ) 2 ( 2 )

公开(公告)号：US20080283819A1

公开(公告)日：2008-11-20

申请号：US11932059

申请日：2007-10-31

申请人： Taichiroo KONNO

发明人： Taichiroo KONNO

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/14 ,  H01L33/46

摘要： A Si substrate 1, a metal adhesion layer 2, a reflective metal film 3 comprising a multilayer of metallic material having a light reflectivity, a SiO2 film 4, an ohmic contact portion 5 provided at a predetermined position of the SiO2 film 4, a GaP layer 6 including a Mg-doped GaP layer 6A and a Zn-doped GaP layer 6B, a p-type GaInP interposed layer 7, a p-type AlGaInP cladding layer 8, an undoped MQW active layer 9, an n-type AlGaInP cladding layer 10, an n-type AlGaInP window layer 11, an n-type GaAs contact layer 12, a first electrode 13, and a second electrode 14 are formed. The ohmic contact portion 5 is distant from the light emitting part including the p-type AlGaInP cladding layer 8, the undoped MQW active layer 9 and the n-type AlGaInP cladding layer 10 by not less than 300 nm.

摘要翻译： Si衬底1，金属粘合层2，包含具有光反射率的金属材料的多层反射金属膜3，SiO 2膜4，设置在预定位置的欧姆接触部5 的SiO 2膜4，包含Mg掺杂GaP层6A和掺杂Zn的GaP层6B的GaP层6，p型GaInP夹层7，p型 AlGaInP包覆层8，未掺杂的MQW有源层9，n型AlGaInP包层10，n型AlGaInP窗层11，n型GaAs接触层12，第一电极13和第二电极14， 形成。 欧姆接触部分5远离包括p型AlGaInP包层8，未掺杂的MQW有源层9和n型AlGaInP包覆层10的发光部分不小于300nm。

公开(公告)号：US20110057214A1

公开(公告)日：2011-03-10

申请号：US12692754

申请日：2010-01-25

申请人： Taichiroo KONNO

发明人： Taichiroo KONNO

IPC分类号： H01L33/00

CPC分类号： H01L33/10 ,  H01L33/22

摘要： An epitaxial wafer, a light-emitting element, a method of fabricating the epitaxial wafer and a method of fabricating the light-emitting element, which have a high output and a low forward voltage, and can be fabricated without increasing fabricating cost, are provided. The epitaxial wafer is formed with a light-emitting portion, a reflective portion provided between a semiconductor substrate and the light-emitting portion and a current dispersing layer having first and second current dispersing layers, wherein the reflective portion has plural pairs of layers having first and second semiconductor layers wherein the first semiconductor layer has a thickness of TA defined by Equation (1), T A = λ p 4  n A  1 - ( n I  n  sin   θ n A ) 2 ( 1 ) the second semiconductor layer has a thickness of TB defined by Equation (2), T B = λ p 4  n B  1 - ( n I  n  sin   θ n B ) 2 ( 2 ) and the second current dispersing layer has a high carrier density or a high impurity density and is provided with the convexoconcave portion on the surface.

摘要翻译： 提供外延晶片，发光元件，制造外延晶片的方法和制造发光元件的方法，其具有高输出和低正向电压，并且可以在不增加制造成本的情况下制造。 。 外延晶片形成有发光部分，设置在半导体基板和发光部分之间的反射部分和具有第一和第二电流分散层的电流分散层，其中反射部分具有多对具有第一 和第二半导体层，其中第一半导体层具有由等式（1）定义的TA的厚度，TA =λp 4 n n A 1 - （n I n n sin sinté; n A）2（1） 第二半导体层具有由等式（2）定义的TB的厚度，TB =λp 4 n n B 1 - （n I n n sin sin t e n t n n n 2）（2）和第二电流分散 层具有高载流子密度或高杂质浓度，并且在表面上设置凸凹部。

公开(公告)号：US20100327298A1

公开(公告)日：2010-12-30

申请号：US12616929

申请日：2009-11-12

申请人： Taichiroo KONNO ,  Nobuaki KITANO

发明人： Taichiroo KONNO ,  Nobuaki KITANO

IPC分类号： H01L33/00 ,  H01L21/30

CPC分类号： H01L33/10

摘要： A light-emitting element includes a semiconductor substrate, a light emitting portion including an active layer sandwiched between a first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type different from the first conductivity type, a reflective portion provided between the semiconductor substrate and the light emitting portion for reflecting light emitted from the active layer, and a current spreading layer provided on the light emitting portion opposite to the reflective portion and including a concavo-convex portion on a surface thereof. The reflective portion includes a plurality of pair layers each including a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer, and the first semiconductor layer has a thickness TA1 defined by formulas (1) and (3), and the second semiconductor layer has a thickness TB1 defined by formulas (2) and (4).

摘要翻译： 发光元件包括半导体衬底，包括夹在第一导电类型的第一包层和不同于第一导电类型的第二导电类型的第二包层之间的有源层的发光部分，设置有反射部分 在半导体基板和用于反射从有源层发射的光的发光部分之间的电流扩散层，以及设置在与反射部分相对的发光部分上的电流扩展层，并且在其表面上包括凹凸部分。 反射部分包括多个对，每个层包括不同于第一半导体层的第一半导体层和第二半导体层，并且第一半导体层具有由公式（1）和（3）定义的厚度TA1，第二半导体层 半导体层具有由式（2）和（4）定义的厚度TB1。