发明申请
- 专利标题： NITRIDE SEMICONDUCTOR TEMPLATE AND LIGHT-EMITTING DIODE
- 专利标题（中）： 氮化物半导体模板和发光二极管
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申请号： US13571535申请日： 2012-08-10
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公开(公告)号： US20130048942A1公开(公告)日： 2013-02-28
- 发明人: Taichiroo KONNO , Hajime Fujikura
- 申请人： Taichiroo KONNO , Hajime Fujikura
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Cable, Ltd.
- 当前专利权人： Hitachi Cable, Ltd.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-180303 20110822
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L33/04
摘要：
A nitride semiconductor template includes a substrate, and a group III nitride semiconductor layer having an oxygen-doped layer formed on the substrate, and a silicon-doped layer formed on the oxygen-doped layer. A total thickness of the group III nitride semiconductor layer is not smaller than 4 μm and not greater than 10 μm, and an average silicon carrier concentration in the silicon-doped layer is not lower than 1×1018 cm−3 and not higher than 5×1018 cm−3.
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