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1.发明申请METAL CHLORIDE GAS GENERATOR, HYDRIDE VAPOR PHASE EPITAXY GROWTH APPARATUS, AND NITRIDE SEMICONDUCTOR TEMPLATE 有权金属氯化物气体发生器，氢化钙蒸汽相外延生长装置和氮化物半导体模板公开(公告)号：US20130043442A1
公开(公告)日：2013-02-21
申请号：US13569983
申请日：2012-08-08
CPC分类号： H01L21/0262 , C30B25/08 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0254 , H01L21/02576 , H01L21/02581 , H01L29/045 , H01L29/2003 , H01L29/207 , H01L29/36
摘要： A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate.
摘要翻译： 金属氯化物气体发生器包括：管式反应器，包括用于在上游侧接收金属的接收部分和生长基底放置在下游侧的生长部分; 气体入口管，其布置成从具有通过接收部的气体入口的上游端延伸到生长部分，用于从上游端引入气体以将气体供应到接收部分，并且供应由 接收部分中的气体和金属与生长部分之间的反应; 以及放置在反应器中以将上游端与生长部分进行热屏蔽的隔热板。 进气管在上游端和隔热板之间弯曲。
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2.发明申请公开(公告)号：US20130001644A1
公开(公告)日：2013-01-03
申请号：US13524300
申请日：2012-06-15
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205 , H01L29/66212 , H01L33/007 , H01L33/12 , H01L33/32
摘要： There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.
摘要翻译： 提供了具有C面作为表面的III族氮化物半导体层的氮化物半导体外延衬底，其经由包含Al的III族氮化物半导体的缓冲层在衬底上生长，其中缓冲层在其上具有反转畴 表面。
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