公开(公告)号：US20230395455A1

公开(公告)日：2023-12-07

申请号：US18454876

申请日：2023-08-24

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Shuiming LI ,  Yu WANG ,  Ping MA ,  Ming LU ,  Cen TANG ,  Zhili ZHANG ,  Qiang HE ,  Haijun LI ,  Tao LIU ,  Jin RAO

IPC: H01L23/367 ,  H01L23/373 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L23/367 ,  H01L23/3735 ,  H01L23/3736 ,  H01L29/66462 ,  H01L29/7786

Abstract: Embodiments of this application provide a semiconductor device, an electronic device, and a semiconductor device preparation method, and relate to the field of chip manufacturing and packaging technologies, to improve heat dissipation efficiency of the semiconductor device without increasing a size. The semiconductor device includes: a substrate, a source, a drain, a gate, and a groove. The source, the drain, and the gate are all formed on the substrate, and an active region is formed between the source and the drain on the substrate. The groove is disposed in the substrate, and a spacing is formed between the groove and the active region. A heat dissipation layer is formed in the groove, and a coefficient of thermal conductivity of the heat dissipation layer is greater than that of the substrate.

公开(公告)号：US20230343835A1

公开(公告)日：2023-10-26

申请号：US18334541

申请日：2023-06-14

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Zhili ZHANG ,  Jin RAO ,  Tao LIU ,  Haijun LI ,  Wei LU ,  Shuiming LI ,  Cen TANG ,  Qiang HE ,  Juncai MA ,  Chunhua FAN ,  Yangyi ZHU

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L29/402 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/401 ,  H01L29/66462

Abstract: The technology of this application relates to a high electron mobility transistor including a GaN substrate layer, a barrier layer, a circuit layer, and a field plate that are sequentially stacked. The GaN substrate layer includes a main body layer and a channel layer that are stacked, the channel layer is adjacent to the barrier layer, the circuit layer includes a source, a drain, and a dielectric layer, the dielectric layer is disposed between the source and the drain, the field plate is disposed on a side that is of the dielectric layer and that is away from the barrier layer, an orthographic projection of the field plate on the channel layer is a field plate projection, the channel layer includes a modulation region and a non-modulation region, the non-modulation region surrounds the modulation region, the modulation region and the field plate projection at least partially overlap.

公开(公告)号：US20200303835A1

公开(公告)日：2020-09-24

申请号：US16898007

申请日：2020-06-10

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wei XIONG ,  Bo XIE ,  Zhulin CHENG ,  Qiang HE ,  Yongjiu LI

IPC: H01Q21/24 ,  H01Q19/18

Abstract: An antenna apparatus includes: N antenna ports and M directional polarization antennas, where M is K times 4, N is an integer multiple of 4, N and M are integers greater than 0, and K is an even number greater than 0; the M directional polarization antennas are evenly distributed on four surfaces of a cube, each surface includes K directional polarization antennas, a polarization direction of K/2 directional polarization antennas on each surface is a first polarization direction, and a polarization direction of other K/2 directional polarization antennas on each surface is a second polarization direction; and on two neighboring surfaces or two opposing surfaces of the four surfaces, K directional polarization antennas in a same polarization direction are combined into one channel, and are connected to one of the N antenna ports, and each of the N antenna ports is connected to the K directional polarization antennas.