公开(公告)号：US20150332445A1

公开(公告)日：2015-11-19

申请号：US14652198

申请日：2013-12-06

申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION

发明人： Minoru HARADA ,  Yuji TAKAGI ,  Ryo NAKAGAKI ,  Takehiro HIRAI ,  Hirohiko KITSUKI

IPC分类号： G06T7/00

CPC分类号： G06T7/001 ,  G01N21/9501 ,  G06T2207/10004 ,  G06T2207/10061 ,  G06T2207/30148

摘要： The purpose of the present invention is to easily extract, from samples to be observed, defect candidates that can be labeled as a defect or “nuisance” (a part for which a manufacturing tolerance or the like is erroneously detected) and to allow parameters pertaining to observation processing to be easily adjusted. This defect observation method comprises: an imaging step to image, on the basis of defect information from an inspection device, an object to be inspected and obtain a defect image and a reference image corresponding to the defect image; a parameter determining step to determine a first parameter to be used in the defect extraction by using a first feature set distribution acquired from the reference image and the defect image captured in the imaging step and a second feature net distribution acquired from the reference image; and an observing step to observe using the first parameter determined in the parameter determining step. The present invention can be applied to a method of observing defects generated during the manufacturing of semiconductor wafers.

摘要翻译： 本发明的目的是容易地从待观察的样品中提取可以被标记为缺陷或“妨碍”（错误地检测制造公差等的部分）的缺陷候选，并且允许参数相关 观察加工易于调整。 该缺陷观察方法包括：成像步骤，基于来自检查装置的缺陷信息，对要检查的对象进行成像，并获得与缺陷图像相对应的缺陷图像和参考图像; 参数确定步骤，通过使用从参考图像获取的第一特征集分布和在成像步骤中捕获的缺陷图像来确定在缺陷提取中使用的第一参数，以及从参考图像获取的第二特征网分布; 以及观察步骤，用于观察使用在参数确定步骤中确定的第一参数。 本发明可以应用于观察在制造半导体晶片期间产生的缺陷的方法。

公开(公告)号：US20140197313A1

公开(公告)日：2014-07-17

申请号：US14215209

申请日：2014-03-17

申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION

发明人： Noritsugu TAKAHASHI ,  Muneyuki FUKUDA ,  Manabu YANO ,  Hirohiko KITSUKI ,  Kazunari ASAO ,  Tomoyasu SHOJO

IPC分类号： H01J37/28 ,  H01J37/10

CPC分类号： H01J37/28 ,  H01J37/10 ,  H01J37/145 ,  H01J37/21 ,  H01J2237/2817

摘要： A charged-particle-beam device is characterized in having a control value for an aligner coil (29) being determined by: a coil current and an electrode applied-voltage at a control value for objectives (30, 31), which is an electromagnetic-field superposition lens; a control value for image-shift coils (27, 28); and the acceleration voltage of the charged-particle-beam. By doing this, it has become possible to avoid image disturbances that occur on images to be displayed at boundaries between charged areas and non-charged areas, and provide a charged-particle-beam device that obtains clear images without any unevenness in brightness.

摘要翻译： 带电粒子束装置的特征在于具有对准线圈（29）的控制值，通过以下方式确定：线圈电流和用于物镜（30,31）的控制值的电极施加电压，其为电磁 场叠加透镜; 用于图像转换线圈（27,28）的控制值; 和带电粒子束的加速电压。 通过这样做，可以避免在充电区域和非充电区域之间的边界处显示图像上出现的图像干扰，并且提供获得清晰图像而没有任何亮度不均匀的带电粒子束装置。

公开(公告)号：US20200234916A1

公开(公告)日：2020-07-23

申请号：US16747761

申请日：2020-01-21

申请人： Hitachi High-Technologies Corporation

发明人： Kenji YASUI ,  Mayuka OSAKI ,  Makoto SUZUKI ,  Hirohiko KITSUKI ,  Toshiyuki YOKOSUKA ,  Daisuke BIZEN ,  Yusuke ABE

IPC分类号： H01J37/28 ,  H01J37/244 ,  G01N23/2251 ,  H01J37/20

摘要： To measure a depth of a three-dimensional structure, for example, a hole or a groove, formed in a sample without preparing information for each pattern or calibration in advance. The invention provides an electron microscope including a detection unit that detects, among emitted electrons generated from a sample by irradiating the sample with a primary electron beam, emitted electrons of which an emission angle is in a predetermined range, the emission angle being an angle formed between an axial direction of the primary electron beam and an emission direction of the emitted electrons from the sample, and outputs a detection signal corresponding to the number of the emitted electrons which are detected. In the electron microscope, an emission angle distribution of a detection signal is obtained based on a plurality of detection signals output by the detection unit, the detection signals being obtained by detecting the emitted electrons having emission angles in each of the plurality of set ranges of emission angles and generated by irradiating a bottom portion of the three-dimensional structure with the primary electron beam, and an opening angle is obtained based on a change point of the emission angle distribution, the opening angle being an angle formed between an optical axis direction of the primary electron beam and a straight line that passes through an upper end of a side wall of the three-dimensional structure from a position irradiated with the primary electron beam in the bottom portion of the three-dimensional structure.