公开(公告)号：US20190265105A1

公开(公告)日：2019-08-29

申请号：US16309513

申请日：2017-06-13

申请人： HEIMANN SENSOR GMBH

发明人： Marion SIMON ,  Mischa SCHULZE ,  Wilhelm LENEKE ,  Karlheinz STORCK ,  Frank HERRMANN ,  Christian SCHMIDT ,  Jörg SCHIEFERDECKER

IPC分类号： G01J5/00 ,  G01J5/02 ,  G01J5/04 ,  G01J5/14 ,  G01N21/3504

摘要： The invention relates to a thermopile infrared individual sensor in a housing that is filled with a gaseous medium having optics and one or more sensor chips with individual sensor cells with infrared sensor structures with reticulated membranes, the infrared-sensitive regions of which are spanned by, in each case, at least one beam over a cavity in a carrier body with good thermal conduction. The object of the invention consists of specifying a thermopile infrared sensor using monolithic Si-micromechanics technology for contactless temperature measurements, which, in the case of a sufficiently large receiver surface, outputs a high signal with a high response speed and which can operated in a gaseous medium with normal pressure or reduced pressure and which is producible in mass produced numbers without complicated technology for sealing the housing. This is achieved by virtue of, in each case, combining a plurality of individual adjacent sensor cells (18) with respectively one infrared-sensitive region with thermopile structures (14, 15) on the membrane (12) on a common carrier body (1) of an individual chip to a single thermopile sensor structure with a signal output in the housing, consisting of a cap (12) sealed with a base plate (3) with a common gaseous medium (10).

公开(公告)号：US20180283958A1

公开(公告)日：2018-10-04

申请号：US15766100

申请日：2016-07-05

申请人： HEIMANN SENSOR GMBH

发明人： Bodo FORG ,  Michael SCHNORR ,  Jörg SCHIEFERDECKER ,  Karlheinz STORCK ,  Marion SIMON ,  Wilhelm LENEKE

IPC分类号： G01J5/08 ,  G01J5/22 ,  H04N5/33 ,  H04N5/378 ,  G01J5/14

CPC分类号： G01J5/0881 ,  G01F1/6888 ,  G01J5/06 ,  G01J5/12 ,  G01J5/14 ,  G01J5/22 ,  H04N5/33 ,  H04N5/378

摘要： A high-resolution thermopile infrared sensor array having monolithically integrated signal processing and a plurality of parallel signal processing channels for the signals from pixels of a sensor array, and a digital port for the serial output of the pixel signals are provided, wherein the sensor array is located on one or more sensor chips. The thermal piled infrared sensor array possesses low power loss, high integration density and high thermal and geometric resolution. Each signal processing channel (K1 . . . KN) has at least one analogue/digital converter (ADC), and is assigned a memory region in a memory (RAM) for storing the signals from the pixels (SE).