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公开(公告)号：US20200370963A1
公开(公告)日：2020-11-26
申请号：US16947599
申请日：2020-08-07
申请人： Heimann Sensor GmbH
发明人： Marion Simon , Mischa SCHULZE , Wilhelm Leneke , Karlheinz Storck , Frank HERRMANN , Christian SCHMIDT , Jörg Schieferdecker
摘要： A thermopile infrared individual sensor includes a housing filled with a gaseous medium. It has optics and one or more sensor chips with individual sensor cells with infrared sensor structures with reticulated membranes, infrared-sensitive regions of which are each spanned by at least one beam over a cavity in a carrier body. The thermopile infrared sensor uses monolithic Si-micromechanics technology for contactless temperature measurements. In the case of a sufficiently large receiver surface, this outputs a high signal with a high response speed. A plurality of individual adjacent sensor cells are combined with respectively one infrared-sensitive region with thermopile structures on the membrane on a common carrier body of an individual chip to a single thermopile sensor structure with a signal output in the housing, consisting of a cap sealed with a base plate with a common gaseous medium.
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2.发明授权公开(公告)号：US10578493B2
公开(公告)日：2020-03-03
申请号：US15766100
申请日：2016-07-05
申请人： HEIMANN SENSOR GMBH
发明人： Bodo Forg , Michael Schnorr , Jörg Schieferdecker , Karlheinz Storck , Marion Simon , Wilhelm Leneke
IPC分类号： G01J5/02 , G01J5/08 , G01J5/06 , G01F1/688 , H04N5/33 , H04N5/378 , G01J5/12 , G01J5/14 , G01J5/22
摘要： A high-resolution thermopile infrared sensor array having monolithically integrated signal processing and a plurality of parallel signal processing channels for the signals from pixels of a sensor array, and a digital port for the serial output of the pixel signals are provided, wherein the sensor array is located on one or more sensor chips. The thermal piled infrared sensor array possesses low power loss, high integration density and high thermal and geometric resolution. Each signal processing channel (K1 . . . KN) has at least one analogue/digital converter (ADC), and is assigned a memory region in a memory (RAM) for storing the signals from the pixels (SE).
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公开(公告)号：US11268861B2
公开(公告)日：2022-03-08
申请号：US16474798
申请日：2017-12-22
申请人： Heimann Sensor GmbH
发明人： Jörg Schieferdecker , Frank Herrmann , Christian Schmidt , Wilhelm Leneke , Marion Simon , Karlheinz Storck , Mischa Schulze
摘要： An SMD-enabled infrared thermopile sensor has at least one miniaturized thermopile pixel on a monolithically integrated sensor chip accommodated in a hermetically sealed housing which consists of an at least partially non-metallic housing substrate and a housing cover. A gas or a gas mixture is contained in the housing. The sensor has a particularly low overall height, in particular in the z direction. This is achieved by virtue of an aperture opening being introduced in the housing cover opposite the thermopile pixel(s), which aperture opening is closed with a focusing lens which focuses the radiation from objects onto the thermopile pixel(s) on the housing substrate, and by virtue of a signal processing unit being integrated on the same sensor chip next to the thermopile pixels, wherein the total housing height and the housing cover are at most 3 mm or less than 2.5 mm.
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公开(公告)号：US10794768B2
公开(公告)日：2020-10-06
申请号：US16309513
申请日：2017-06-13
申请人： Heimann Sensor GmbH
发明人： Marion Simon , Mischa Schulze , Wilhelm Leneke , Karlheinz Storck , Frank Herrmann , Christian Schmidt , Jörg Schieferdecker
摘要： The invention relates to a thermopile infrared individual sensor in a housing that is filled with a gaseous medium having optics and one or more sensor chips with individual sensor cells with infrared sensor structures with reticulated membranes, the infrared-sensitive regions of which are spanned by, in each case, at least one beam over a cavity in a carrier body with good thermal conduction. The object of the invention consists of specifying a thermopile infrared sensor using monolithic Si-micromechanics technology for contactless temperature measurements, which, in the case of a sufficiently large receiver surface, outputs a high signal with a high response speed and which can operated in a gaseous medium with normal pressure or reduced pressure and which is producible in mass produced numbers without complicated technology for sealing the housing. This is achieved by virtue of, in each case, combining a plurality of individual adjacent sensor cells (18) with respectively one infrared-sensitive region with thermopile structures (14, 15) on the membrane (12) on a common carrier body (1) of an individual chip to a single thermopile sensor structure with a signal output in the housing, consisting of a cap (12) sealed with a base plate (3) with a common gaseous medium (10).
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公开(公告)号：US20180335347A1
公开(公告)日：2018-11-22
申请号：US15777742
申请日：2016-11-28
申请人： HEIMANN SENSOR GMBH
发明人： Frank HERRMANN , Christian SCHMIDT , Jörg SCHIEFERDECKER , Wilhelm LENEKE , Bodo FORG , Marion SIMON , Michael SCHNORR
摘要： A thermal infrared sensor array in a wafer-level package includes at least one infrared-sensitive pixel produced using silicon micro mechanics, comprising a heat-isolating cavity in a silicon substrate surrounded by a silicon edge, and a thin membrane connected to the silicone edge by of thin beams. The cavity extends through the silicon substrate to the membrane, and there are slots between the membrane, the beams and the silicon edge. A plurality of infrared-sensitive individual pixels are arranged in lines or arrays and are designed in a CMOS stack in a dielectric layer, forming the membrane, and are arranged between at least one cover wafer which is designed in the form of a cap and has a cavity and a base wafer. The cover wafer, the silicon substrate and the base wafer are connected to one another in a vacuum-tight manner and enclosing a gas vacuum.
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公开(公告)号：US20160025571A1
公开(公告)日：2016-01-28
申请号：US14379007
申请日：2013-01-18
申请人： Heimann Sensor GmbH
发明人： Frank Herrmann , Marion Simon , Wilhelm Leneke , Bodo Forg , Karlheinz Storck , Michael Mueller , Joerg Schieferdecker
CPC分类号： G01J5/12 , G01J5/023 , G01J5/06 , G01J5/0815 , G01J5/0853
摘要： Thermopile infrared sensor structure with a high filling level in a housing filled with a medium (15), consisting of a carrier substrate (11) which has electrical connections (28, 28′) to the outside and is closed with an optical assembly (13), wherein a sensor chip (14) is applied to the carrier substrate (11) in the housing, which chip has a plurality of thermoelectric sensor element structures (16), the so-called “hot contacts” (10) of which are located on individual diaphragms (3) which are stretched across a respective cavity (9) in a silicon carrying body (24) with good thermal conductivity, wherein the “cold contacts” (25) are located on or in the vicinity of the silicon carrying body (24). The problem addressed by the invention is that of specifying a thermopile infrared array sensor (sensor cell) which, with a small chip size, has a high thermal resolution and a particularly high filling level. This sensor is preferably intended to be operated in gas with a normal pressure or a reduced pressure and is intended to be able to be mass-produced in a cost-effective manner under ultra-high vacuum without complicated technologies for closing the housing. This is achieved by virtue of the fact that a radiation collector structure (17) is located above each individual diaphragm (3) of the sensor element structures (16) which spans a cavity (9).
摘要翻译： 在填充有介质（15）的壳体中具有高填充水平的热电堆红外传感器结构，由具有到外部的电连接（28,28'）并且用光学组件（13）封闭的载体基板（11） ），其中传感器芯片（14）被施加到壳体中的载体基板（11）上，该芯片具有多个热电传感器元件结构（16），所谓的“热触点”（10） 位于在具有良好导热性的硅载体（24）中穿过相应空腔（9）的单个膜片（3）上，其中“冷触点”（25）位于硅载体上或其附近 身体（24）。 本发明解决的问题是指定热电堆红外阵列传感器（传感器单元），其具有小的芯片尺寸，具有高热分辨率和特别高的填充水平。 该传感器优选用于在正常压力或减压下的气体中操作，并且旨在能够在超高真空下以成本有效的方式批量生产，而不需要用于关闭壳体的复杂技术。 这通过以下事实来实现：辐射收集器结构（17）位于跨越空腔（9）的传感器元件结构（16）的每个单独隔膜（3）上方。
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7.发明申请公开(公告)号：US20220283034A1
公开(公告)日：2022-09-08
申请号：US17624938
申请日：2020-07-09
申请人： Heimann Sensor GmbH
发明人： Jörg SCHIEFERDECKER , Frank HERRMANN , Christian SCHMIDT , Wilhelm LENEKE , Bodo FORG , Marion SIMON , Michael SCHNORR
IPC分类号： G01J5/12 , G01J5/0802 , G01J5/04 , H01L27/146
摘要： A method for producing a thermal infrared sensor array in a vacuum-filled wafer-level housing with particularly small dimensions, consisting of at least two wafers, a cover wafer and a central wafer comprising multiple infrared-sensitive sensor pixels on a respective thin slotted membrane over a heat-insulating cavity is disclosed. A method for producing a high-resolution monolithic silicon micromechanical thermopile array sensor using wafer level packaging technology, wherein the sensor achieves a particularly high spatial resolution capability and a very high filling degree with very small housing dimensions, in particular a very low overall thickness, and can be inexpensively produced using standard CMOS processes. This is achieved in that the cover wafer is first rigidly mechanically connected to the provided central wafer comprising the sensor pixels with the infrared-sensitive pixels by means of wafer bonding, and the central wafer is then thinned out from the wafer rear face to a specified thickness.
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公开(公告)号：US10788370B2
公开(公告)日：2020-09-29
申请号：US15777742
申请日：2016-11-28
申请人： HEIMANN SENSOR GMBH
发明人： Frank Herrmann , Christian Schmidt , Jörg Schieferdecker , Wilhelm Leneke , Bodo Forg , Marion Simon , Michael Schnorr
摘要： A thermal infrared sensor array in a wafer-level package includes at least one infrared-sensitive pixel produced using silicon micro mechanics, comprising a heat-isolating cavity in a silicon substrate surrounded by a silicon edge, and a thin membrane connected to the silicone edge by of thin beams. The cavity extends through the silicon substrate to the membrane, and there are slots between the membrane, the beams and the silicon edge. A plurality of infrared-sensitive individual pixels are arranged in lines or arrays and are designed in a CMOS stack in a dielectric layer, forming the membrane, and are arranged between at least one cover wafer which is designed in the form of a cap and has a cavity and a base wafer. The cover wafer, the silicon substrate and the base wafer are connected to one another in a vacuum-tight manner and enclosing a gas vacuum.
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公开(公告)号：US20190316967A1
公开(公告)日：2019-10-17
申请号：US16474798
申请日：2017-12-22
申请人： Heimann Sensor GmbH
发明人： Jörg Schieferdecker , Frank HERRMANN , Christian SCHMIDT , Wilhelm Leneke , Marion Simon , Karlheinz Storck , Mischa SCHULZE
摘要： An SMD-enabled infrared thermopile sensor has at least one miniaturized thermopile pixel on a monolithically integrated sensor chip accommodated in a hermetically sealed housing which consists of an at least partially non-metallic housing substrate and a housing cover. A gas or a gas mixture is contained in the housing. The sensor has a particularly low overall height, in particular in the z direction. This is achieved by virtue of an aperture opening being introduced in the housing cover opposite the thermopile pixel(s), which aperture opening is closed with a focusing lens which focuses the radiation from objects onto the thermopile pixel(s) on the housing substrate, and by virtue of a signal processing unit being integrated on the same sensor chip next to the thermopile pixels, wherein the total housing height and the housing cover are at most 3 mm or less than 2.5 mm.
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公开(公告)号：US20190265105A1
公开(公告)日：2019-08-29
申请号：US16309513
申请日：2017-06-13
申请人： HEIMANN SENSOR GMBH
发明人： Marion SIMON , Mischa SCHULZE , Wilhelm LENEKE , Karlheinz STORCK , Frank HERRMANN , Christian SCHMIDT , Jörg SCHIEFERDECKER
IPC分类号： G01J5/00 , G01J5/02 , G01J5/04 , G01J5/14 , G01N21/3504
摘要： The invention relates to a thermopile infrared individual sensor in a housing that is filled with a gaseous medium having optics and one or more sensor chips with individual sensor cells with infrared sensor structures with reticulated membranes, the infrared-sensitive regions of which are spanned by, in each case, at least one beam over a cavity in a carrier body with good thermal conduction. The object of the invention consists of specifying a thermopile infrared sensor using monolithic Si-micromechanics technology for contactless temperature measurements, which, in the case of a sufficiently large receiver surface, outputs a high signal with a high response speed and which can operated in a gaseous medium with normal pressure or reduced pressure and which is producible in mass produced numbers without complicated technology for sealing the housing. This is achieved by virtue of, in each case, combining a plurality of individual adjacent sensor cells (18) with respectively one infrared-sensitive region with thermopile structures (14, 15) on the membrane (12) on a common carrier body (1) of an individual chip to a single thermopile sensor structure with a signal output in the housing, consisting of a cap (12) sealed with a base plate (3) with a common gaseous medium (10).
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