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公开(公告)号：US09104122B2
公开(公告)日：2015-08-11
申请号：US13239052
申请日：2011-09-21
申请人： Gian Francesco Lorusso , Sang Lee
发明人： Gian Francesco Lorusso , Sang Lee
IPC分类号： G03B27/68 , G03B27/54 , G03B27/62 , G03B27/32 , G03F7/20 , G03F1/24 , G03F1/84 , G03B27/52 , G03B27/42
CPC分类号： G03F7/7085 , G03F1/24 , G03F1/84 , G03F7/70525 , G03F7/70616 , G03F7/70783
摘要： Disclosed are methods and systems for determining a topography of a lithographic optical element and/or a holder of a lithographic optical element. In one embodiment, the method includes directing electromagnetic radiation towards a lithographic optical element, where the electromagnetic radiation comprises electromagnetic radiation in a first predetermined wavelength range and electromagnetic radiation in a second predetermined wavelength range. The method further includes using the lithographic optical element to adsorb the electromagnetic radiation in the first predetermined wavelength range, and to reflect at least a portion of the electromagnetic radiation in the second predetermined wavelength range towards a substrate comprising a photosensitive layer, thereby exposing the photosensitive layer to form an exposed photosensitive layer. The method still further includes performing an evaluation of the exposed photosensitive layer and, based on the evaluation, determining a topography of the lithographic optical element.
摘要翻译： 公开了用于确定光刻光学元件和/或平版印刷光学元件的保持器的形貌的方法和系统。 在一个实施例中，该方法包括将电磁辐射引向平版印刷光学元件，其中电磁辐射包括在第一预定波长范围内的电磁辐射和在第二预定波长范围内的电磁辐射。 该方法还包括使用平版印刷光学元件吸附第一预定波长范围内的电磁辐射，并将第二预定波长范围内的电磁辐射的至少一部分反射到包含光敏层的基片上，从而使感光层 以形成曝光的感光层。 该方法还包括执行曝光的感光层的评估，并且基于评估，确定平版印刷光学元件的形貌。
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公开(公告)号：US20120075604A1
公开(公告)日：2012-03-29
申请号：US13239052
申请日：2011-09-21
申请人： Gian Francesco Lorusso , Sang Lee
发明人： Gian Francesco Lorusso , Sang Lee
IPC分类号： G03B27/54
CPC分类号： G03F7/7085 , G03F1/24 , G03F1/84 , G03F7/70525 , G03F7/70616 , G03F7/70783
摘要： Disclosed are methods and systems for determining a topography of a lithographic optical element and/or a holder of a lithographic optical element. In one embodiment, the method includes directing electromagnetic radiation towards a lithographic optical element, where the electromagnetic radiation comprises electromagnetic radiation in a first predetermined wavelength range and electromagnetic radiation in a second predetermined wavelength range. The method further includes using the lithographic optical element to adsorb the electromagnetic radiation in the first predetermined wavelength range, and to reflect at least a portion of the electromagnetic radiation in the second predetermined wavelength range towards a substrate comprising a photosensitive layer, thereby exposing the photosensitive layer to form an exposed photosensitive layer. The method still further includes performing an evaluation of the exposed photosensitive layer and, based on the evaluation, determining a topography of the lithographic optical element.
摘要翻译： 公开了用于确定光刻光学元件和/或平版印刷光学元件的保持器的形貌的方法和系统。 在一个实施例中，该方法包括将电磁辐射引向平版印刷光学元件，其中电磁辐射包括在第一预定波长范围内的电磁辐射和在第二预定波长范围内的电磁辐射。 该方法还包括使用平版印刷光学元件吸附第一预定波长范围内的电磁辐射，并将第二预定波长范围内的电磁辐射的至少一部分反射到包含光敏层的基片上，从而使感光层 以形成曝光的感光层。 该方法还包括执行曝光的感光层的评估，并且基于评估，确定平版印刷光学元件的形貌。
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公开(公告)号：US06670612B1
公开(公告)日：2003-12-30
申请号：US10186797
申请日：2002-07-01
IPC分类号： G01N23225
CPC分类号： G01N23/2251 , H01J37/28 , H01J2237/2611 , H01J2237/2815
摘要： The disclosure relates to measuring an undercut of a feature on a specimen using a scanning electron microscope (SEM). In accordance with one embodiment, a method for measuring the undercut includes illuminating the feature with a primary electron beam at an incident angle, changing the incident angle of the primary electron beam over a set of angles, measuring an intensity of scattered electrons from the feature for each incident angle in the set of angles, and determining a discontinuity in the intensities as a function of the incident angle.
摘要翻译： 本公开涉及使用扫描电子显微镜（SEM）测量样品上的特征的底切。 根据一个实施例，用于测量底切的方法包括以入射角以一次电子束照射该特征，改变一组电子束在一组角度上的入射角，测量来自特征的散射电子的强度 对于角度集合中的每个入射角，并且确定作为入射角的函数的强度的不连续性。
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公开(公告)号：US09086638B2
公开(公告)日：2015-07-21
申请号：US13282175
申请日：2011-10-26
CPC分类号： G03F7/70916 , G03F7/7085 , Y10T29/49
摘要： A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual mirrors of the optics of the system.
摘要翻译： 公开了一种用于感测应用系统中的污染的传感器。 在一个方面，传感器包括盖层。 当传感器设置在系统中时，传感器适于在盖层上初始形成第一污染层时引起第一反射率变化。 第一反射率变化大于在覆盖层上形成较厚污染层时的平均反射率变化，并且大于在系统光学器件的实际反射镜上形成相等污染物时的平均反射率变化。
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公开(公告)号：US06815675B1
公开(公告)日：2004-11-09
申请号：US10426665
申请日：2003-04-30
IPC分类号： G01N2300
CPC分类号： G01N23/2251 , H01J2237/004 , H01J2237/28
摘要： The disclosure relates to a method and system of electron beam scanning for measurement, inspection or review. In accordance with one embodiment, the method includes a first scan on a region to collect first image data. The first image data is processed to determine information about a feature in the region. A scanning method is selected for imaging the feature. A second scan using the selected scanning method on the feature is then applied to collect second image data.
摘要翻译： 本公开涉及用于测量，检查或审查的电子束扫描的方法和系统。 根据一个实施例，该方法包括在收集第一图像数据的区域上的第一扫描。 处理第一图像数据以确定关于该区域中的特征的信息。 选择扫描方法来成像该特征。 然后应用使用所选择的扫描方法对该特征进行的第二次扫描来收集第二图像数据。
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公开(公告)号：US07423269B1
公开(公告)日：2008-09-09
申请号：US11360325
申请日：2006-02-22
CPC分类号： H01J37/222 , G03F7/70625 , H01J37/1478 , H01J37/28 , H01J2237/24578 , H01J2237/2809 , H01J2237/2817
摘要： One embodiment relates to a method of automated microalignment using off-axis beam tilting. Image data is collected from a region of interest on a substrate at multiple beam tilts. Potential edges of a feature to be identified in the region are determined, and computational analysis of edge-related data is performed to positively identify the feature(s). Another embodiment relates to a method of automated detection of undercut on a feature using off-axis beam tilting. For each beam tilt, a determination is made of difference data between the edge measurement of one side and the edge measurement of the other side. An undercut on the feature is detected from the difference data. Other embodiments are also disclosed.
摘要翻译： 一个实施例涉及使用离轴光束倾斜的自动微距对准方法。 在多个光束倾斜的基底上从感兴趣的区域收集图像数据。 确定要在该区域中识别的特征的潜在边缘，并且执行边缘相关数据的计算分析以肯定地识别特征。 另一实施例涉及使用离轴光束倾斜在特征上自动检测底切的方法。 对于每个光束倾斜，确定一侧的边缘测量与另一侧的边缘测量之间的差数据。 根据差异数据检测该特征的底切。 还公开了其他实施例。
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公开(公告)号：US07015468B1
公开(公告)日：2006-03-21
申请号：US10807899
申请日：2004-03-24
申请人： Amir Azordegan , Gian Francesco Lorusso , Ananthanarayanan Mohan , Mark Neil , Waiman Ng , Srini Vedula
发明人： Amir Azordegan , Gian Francesco Lorusso , Ananthanarayanan Mohan , Mark Neil , Waiman Ng , Srini Vedula
IPC分类号： H01J37/26 , G01N23/225
CPC分类号： G03F7/70625 , H01J2237/2067 , H01J2237/2817
摘要： A method of improving stability for CD-SEM measurements of photoresist, in particular 193 nm photoresist, and of reducing shrinkage of 193 nm photoresist during CD-SEM measurements.The photoresist is exposed to a dose of electrons or other stabilizing beam prior to or during CD measurement. One embodiment of the invention includes multiplexing of the SEM electron beam.
摘要翻译： 提高光刻胶，特别是193nm光致抗蚀剂的CD-SEM测量的稳定性的方法，以及在CD-SEM测量期间减小193nm光致抗蚀剂的收缩的方法。 在CD测量之前或期间，光致抗蚀剂暴露于一定量的电子或其他稳定光束。 本发明的一个实施例包括SEM电子束的多路复用。
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公开(公告)号：US06784425B1
公开(公告)日：2004-08-31
申请号：US10008253
申请日：2001-11-09
申请人： Gian Francesco Lorusso , Laurence Stuart Hordon , Sander Josef Gubbens , Douglas Keith Masnaghetti
发明人： Gian Francesco Lorusso , Laurence Stuart Hordon , Sander Josef Gubbens , Douglas Keith Masnaghetti
IPC分类号： H01J4700
CPC分类号： H01J37/28 , H01J2237/22 , H01J2237/2804
摘要： The present invention pertains to a technique of electron spectroscopic imaging that is easy to perform and cost effective. This technique allows for spatial resolution enhancement of electron beam semiconductor inspection systems (for example a critical dimension scanning electron microscope CD-SEM) as well as to obtain useful physical or chemical information on the investigated specimen. The technique involves a high pass energy filter that is alternately set, or multiplexed, at two energies. For an inspected area on a specimen, the detected intensity level at the higher energy setting is subtracted from the intensity level at the lower energy setting. The obtained differential value corresponds to electrons having energy within the range of the first and second filter settings. This obtained differential value is used to generate an image of the specimen for inspection purposes.
摘要翻译： 本发明涉及易于执行和成本有效的电子分光成像技术。 该技术允许电子束半导体检查系统（例如临界尺寸扫描电子显微镜CD-SEM）的空间分辨率增强，以及获得关于被研究样本的有用的物理或化学信息。 该技术涉及在两个能量下交替地设置或多路复用的高通能量滤波器。 对于样本上的检查区域，在较低能量设置下从强度水平减去较高能量设定下的检测强度水平。 获得的微分值对应于具有在第一和第二滤波器设置范围内的能量的电子。 该获得的差分值用于产生用于检查目的的样本的图像。
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公开(公告)号：US20120099092A1
公开(公告)日：2012-04-26
申请号：US13282175
申请日：2011-10-26
CPC分类号： G03F7/70916 , G03F7/7085 , Y10T29/49
摘要： A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual minors of the optics of the system.
摘要翻译： 公开了一种用于感测应用系统中的污染的传感器。 在一个方面，传感器包括盖层。 当传感器设置在系统中时，传感器适于在盖层上初始形成第一污染层时引起第一反射率变化。 第一反射率变化大于在覆盖层上形成较厚污染层时的平均反射率变化，并且大于在系统的光学器件的实际未成年体上形成相等污染物时的平均反射率变化。
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公开(公告)号：US20090103069A1
公开(公告)日：2009-04-23
申请号：US12236446
申请日：2008-09-23
CPC分类号： G03F7/70916 , G03F7/7085 , Y10T29/49
摘要： A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual mirrors of the optics of the system.
摘要翻译： 公开了一种用于感测应用系统中的污染的传感器。 在一个方面，传感器包括盖层。 当传感器设置在系统中时，传感器适于在盖层上初始形成第一污染层时引起第一反射率变化。 第一反射率变化大于在覆盖层上形成较厚污染层时的平均反射率变化，并且大于在系统光学器件的实际反射镜上形成相等污染物时的平均反射率变化。
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