公开(公告)号：US20240255848A1

公开(公告)日：2024-08-01

申请号：US18449156

申请日：2023-08-14

Applicant: Geun Su Lee ,  Samsung Electronics Co., Ltd.

Inventor： Chawon KOH ,  Yeon Hee SEONG ,  Tsunehiro NISHI ,  Geun Su LEE ,  Sung Jae JUNG ,  Moo Hyun KOH ,  Ji Young PARK ,  Seungyeol BAEK

IPC: G03F7/004 ,  C07F7/22 ,  C07F9/6596 ,  G03F7/075 ,  G03F7/16 ,  G03F7/38 ,  H01L21/027

CPC classification number: G03F7/0045 ,  C07F7/2224 ,  C07F9/6596 ,  G03F7/0757 ,  G03F7/168 ,  G03F7/38 ,  H01L21/0274

Abstract: The present disclosure relates to a semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and a method of forming patterns by using the semiconductor photoresist composition.

公开(公告)号：US20230147233A1

公开(公告)日：2023-05-11

申请号：US18000968

申请日：2021-06-22

Applicant: GEUN SU LEE ,  KOLON INDUSTRIES, INC.

Inventor： Geun Su LEE ,  Hak-Yong WOO ,  Jong Hyeon CHEON

IPC: C07F7/18 ,  C09D183/14 ,  C08J7/06 ,  C09D7/63

CPC classification number: C07F7/1804 ,  C09D183/14 ,  C08J7/065 ,  C09D7/63 ,  C08J2379/08

Abstract: Disclosed are a silazane-based compound represented by Formula 1, a coating composition containing the silazane-based compound, a light-transmitting film including a first coating layer containing the silazane-based compound, and a display apparatus including the light-transmitting film.

公开(公告)号：US20180033688A1

公开(公告)日：2018-02-01

申请号：US15470387

申请日：2017-03-27

Applicant: Geun Su LEE ,  SK hynix Inc.

Inventor： Ji Won MOON ,  Jin Wook JANG ,  Sang Youl YI ,  Sung Jae LEE ,  Geun Su LEE ,  Young Sun LEE ,  Min Su KIM

IPC: H01L21/768 ,  H01L21/311 ,  C08G77/00 ,  C08G77/18 ,  C08G77/20 ,  H01L21/28 ,  H01L21/04

CPC classification number: H01L21/76861 ,  C08G77/18 ,  C08G77/20 ,  C08G77/80 ,  H01L21/048 ,  H01L21/28 ,  H01L21/311

Abstract: A gap-fill polymer for filling fine pattern gaps, which has a low dielectric constant (flow-k) and excellent gap filling properties may consist of a compound formed by condensation polymerization of a first oligomer represented by the formula 1 and a second oligomer represented by the formula 2.

公开(公告)号：US20140057458A1

公开(公告)日：2014-02-27

申请号：US13840551

申请日：2013-03-15

Applicant: Geun Su Lee ,  SK HYNIX INC.

Inventor： Hyung Soon PARK ,  Kwon HONG ,  Jong Min LEE ,  Hyung Hwan KIM ,  Ji Hye HAN ,  Geun Su LEE

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02307 ,  H01L21/02326 ,  H01L21/02343

Abstract: A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved.

Abstract translation: 公开了一种用于形成半导体器件的氧化硅膜的方法。 形成半导体器件的氧化硅膜的方法包括使用胺类化合物进行表面处理，从而可以提高氧化硅膜的均匀性和密度。

公开(公告)号：US20230375936A1

公开(公告)日：2023-11-23

申请号：US18153568

申请日：2023-01-12

Applicant: Samsung Electronics Co, Ltd.

Inventor： Sangjin KIM ,  Chansik KIM ,  Geun Su LEE ,  Sungjae JUNG ,  Dokyeong KWON ,  Yigwon KIM ,  Hyunju SONG ,  Hyungju RYU ,  Tae Min CHOI ,  Keon HUH

IPC: G03F7/32 ,  C08F297/02

CPC classification number: G03F7/322 ,  C08F297/02

Abstract: A developing composition and a method of forming a pattern using the same are provided. According to embodiments of inventive concepts, the developing composition may include at least one repeating unit selected from a first repeating unit represented by Chemical Formula A1 a second repeating unit represented by Chemical Formula A2, or both the first repeating unit represented by Chemical Formula A1 and second repeating unit represented by Chemical Formula A2. The developing composition may further include a copolymer including a third repeating unit represented by Chemical Formula A3.