专利检索 ap:("Geun Su LEE" OR "SK hynix Inc.") AND inv:"Jin Wook JANG" 第 1 页

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发明申请
GAP-FILL POLYMER FOR FILLING FINE PATTERN GAPS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME 有权

公开(公告)号：US20180033688A1

公开(公告)日：2018-02-01

申请号：US15470387

申请日：2017-03-27

申请人： Geun Su LEE , SK hynix Inc.

发明人： Ji Won MOON , Jin Wook JANG , Sang Youl YI , Sung Jae LEE , Geun Su LEE , Young Sun LEE , Min Su KIM

IPC分类号： H01L21/768 , H01L21/311 , C08G77/00 , C08G77/18 , C08G77/20 , H01L21/28 , H01L21/04

CPC分类号： H01L21/76861 , C08G77/18 , C08G77/20 , C08G77/80 , H01L21/048 , H01L21/28 , H01L21/311

摘要： A gap-fill polymer for filling fine pattern gaps, which has a low dielectric constant (flow-k) and excellent gap filling properties may consist of a compound formed by condensation polymerization of a first oligomer represented by the formula 1 and a second oligomer represented by the formula 2.