公开(公告)号：US20050030402A1

公开(公告)日：2005-02-10

申请号：US10636534

申请日：2003-08-08

Applicant: Gennadiy Agranov ,  Dmitri Jerdev

Inventor： Gennadiy Agranov ,  Dmitri Jerdev

IPC: H04N3/15 ,  H04N3/14 ,  H04N5/335

CPC classification number: H04N5/3597 ,  H04N5/374

Abstract: A pixel cell with improved lag characteristics without increased noise. The pixel cell according to embodiments of the invention includes a photo-conversion device and a floating diffusion region switchably coupled to the photo-conversion device. The pixel cell includes a reset transistor, which has a first terminal electrically connected to the floating diffusion region and a second terminal switchably coupled to first and second voltage sources. The first voltage source is higher than the second voltage source. The pixel cell operates by returning a potential on the photo-conversion device to a value approximately equal to a value of a potential barrier between the photo-conversion device and the floating diffusion region prior to generating charge in the photo-conversion device.

Abstract translation: 具有改进的滞后特性而不增加噪声的像素单元。 根据本发明的实施例的像素单元包括光转换装置和可转换地耦合到光转换装置的浮动扩散区域。 像素单元包括复位晶体管，其具有电连接到浮动扩散区域的第一端子和可切换地耦合到第一和第二电压源的第二端子。 第一电压源高于第二电压源。 像素单元通过在光转换装置中产生电荷之前将光转换装置上的电位返回到大致等于光转换装置和浮动扩散区域之间的势垒的值的值来操作。

公开(公告)号：US20050237404A1

公开(公告)日：2005-10-27

申请号：US10832373

申请日：2004-04-27

Applicant: Dmitri Jerdev ,  Gennadiy Agranov

Inventor： Dmitri Jerdev ,  Gennadiy Agranov

IPC: H04N3/14 ,  H04N5/365 ,  H04N5/3745

CPC classification number: H04N5/365 ,  H04N5/374

Abstract: A pixel cell that utilizes a JFET transistor, instead of a CMOS transistor, linked to each pixel's photosensor as an anti-blooming and/or transfer transistor to provide an overflow path for electrons during charge integration. Using a JFET transistor reduces charge uncertainty and fixed pattern noise in the imaging system.

Abstract translation: 使用JFET晶体管而不是CMOS晶体管的像素单元，其连接到每个像素的光电传感器作为抗起霜和/或传输晶体管，以在电荷积分期间为电子提供溢出路径。 使用JFET晶体管可以降低成像系统中的电荷不确定度和固定模式噪声。

公开(公告)号：US08569681B2

公开(公告)日：2013-10-29

申请号：US12813705

申请日：2010-06-11

Applicant: Ilia Ovsiannikov ,  Xuemei Zhang ,  Dmitri Jerdev

Inventor： Ilia Ovsiannikov ,  Xuemei Zhang ,  Dmitri Jerdev

IPC: G03B13/02

CPC classification number: H04N5/33 ,  G03B13/02 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14649 ,  H04N5/374

Abstract: A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device.

Abstract translation: 固态成像装置包括在传感器上形成的有源像素阵列和红外截止滤波器。 可选地，红外线截止滤光器中的狭槽允许红外照明到达传感器以由视觉不透明滤光片覆盖的像素检测，并被限制电荷泄漏的特殊类型的像素包围，并实现红外照明的高动态范围感测。 平均红外信号与平均亮度的比率表示到达成像装置的红外线照射量。

公开(公告)号：US20120008018A1

公开(公告)日：2012-01-12

申请号：US13237105

申请日：2011-09-20

Applicant: Dmitri Jerdev ,  Igor Subbotin ,  Ilia Ovsiannikov

Inventor： Dmitri Jerdev ,  Igor Subbotin ,  Ilia Ovsiannikov

IPC: H04N9/64

CPC classification number: H04N5/3572

Abstract: An improved non-uniform sensitivity correction algorithm for use in an imager device (e.g., a CMOS APS). The algorithm provides zones having flexible boundaries which can be reconfigured depending upon the type of lens being used in a given application. Each pixel within each zone is multiplied by a correction factor dependent upon the particular zone while the pixel is being read out from the array. The amount of sensitivity adjustment required for a given pixel depends on the type of lens being used, and the same correction unit can be used with multiple lenses where the zone boundaries and the correction factors are adjusted for each lens. In addition, the algorithm makes adjustments to the zone boundaries based upon a misalignment between the centers of the lens being used and the APS array.

Abstract translation: 用于成像器装置（例如，CMOS APS）的改进的非均匀灵敏度校正算法。 该算法提供具有灵活边界的区域，其可以根据在给定应用中使用的透镜的类型而被重新配置。 每个区域内的每个像素乘以一个校正因子，取决于特定的区域，同时从阵列中读出像素。 给定像素所需的灵敏度调整量取决于所使用的透镜的类型，并且相同的校正单元可以与多个透镜一起使用，其中针对每个透镜调整区域边界和校正因子。 此外，该算法基于所使用的透镜的中心与APS阵列之间的未对准来对区域边界进行调整。

公开(公告)号：US07612393B2

公开(公告)日：2009-11-03

申请号：US11653860

申请日：2007-01-17

Applicant: Dmitri Jerdev ,  Nail Khaliullin

Inventor： Dmitri Jerdev ,  Nail Khaliullin

IPC: H01L29/80

CPC classification number: H01L27/14679 ,  H01L31/1126

Abstract: An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges.

Abstract translation: 成像器像素具有感光JFET结构，其具有位于掩埋电荷累积区上方的沟道区。 通道区域具有根据累积区域中的累积电荷的电平而变化的电阻特性。 在积分期间，入射光使得电子被积聚在掩埋积聚区域内。 沟道区域的电阻特性响应于由累积区域积累的电荷产生的场而发生变化。 因此，当向通道的一侧施加电压时，从另一侧读出的电流是存储电荷量的特征。

公开(公告)号：US07417677B2

公开(公告)日：2008-08-26

申请号：US10636534

申请日：2003-08-08

Applicant: Gennadiy A. Agranov ,  Dmitri Jerdev

Inventor： Gennadiy A. Agranov ,  Dmitri Jerdev

IPC: H04N5/335 ,  H04N5/217

CPC classification number: H04N5/3597 ,  H04N5/374

Abstract: A pixel cell with improved lag characteristics without increased noise. The pixel cell according to embodiments of the invention includes a photo-conversion device and a floating diffusion region switchably coupled to the photo-conversion device. The pixel cell includes a reset transistor, which has a first terminal electrically connected to the floating diffusion region and a second terminal switchably coupled to first and second voltage sources. The first voltage source is higher than the second voltage source. The pixel cell operates by returning a potential on the photo-conversion device to a value approximately equal to a value of a potential barrier between the photo-conversion device and the floating diffusion region prior to generating charge in the photo-conversion device.

Abstract translation: 具有改进的滞后特性而不增加噪声的像素单元。 根据本发明的实施例的像素单元包括光转换装置和可转换地耦合到光转换装置的浮动扩散区域。 像素单元包括复位晶体管，其具有电连接到浮动扩散区域的第一端子和可切换地耦合到第一和第二电压源的第二端子。 第一电压源高于第二电压源。 像素单元通过在光转换装置中产生电荷之前将光转换装置上的电位返回到大致等于光转换装置和浮动扩散区域之间的势垒的值的值来操作。

公开(公告)号：US20080056707A1

公开(公告)日：2008-03-06

申请号：US11513582

申请日：2006-08-31

Applicant: Ilia Ovsiannikov ,  Xuemei Zhang ,  Dmitri Jerdev

Inventor： Ilia Ovsiannikov ,  Xuemei Zhang ,  Dmitri Jerdev

IPC: G03B13/02

CPC classification number: H04N5/33 ,  G03B13/02 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14649 ,  H04N5/374

Abstract: A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device.

Abstract translation: 固态成像装置包括在传感器上形成的有源像素阵列和红外截止滤波器。 可选地，红外线截止滤光器中的狭槽允许红外照明到达传感器以由视觉不透明滤光片覆盖的像素检测，并被限制电荷泄漏的特殊类型的像素包围，并实现红外照明的高动态范围感测。 平均红外信号与平均亮度的比率表示到达成像装置的红外线照射量。

公开(公告)号：US20070133893A1

公开(公告)日：2007-06-14

申请号：US11302120

申请日：2005-12-14

Applicant: Dmitri Jerdev

Inventor： Dmitri Jerdev

IPC: G06K9/40

CPC classification number: G06T5/20 ,  G06T5/002 ,  G06T2207/10024 ,  H04N5/357 ,  H04N5/3675

Abstract: A method and apparatus that allows for image denoising in an imaging device. The method and implementing apparatus selects a kernel, which includes neighboring pixel pairs for a identified pixel, determines average output signal values for pixel pairs in the correction kernel, determines the difference in the average values and the identified pixel's value, compares the difference values to a threshold and incorporates selected average pixel pair values into the identified pixel's value for pixel pairs having difference values equal to or less than or equal to the threshold value.

Abstract translation: 允许在成像装置中进行图像去噪的方法和装置。 所述方法和实现装置选择包括所识别的像素的相邻像素对的核，确定校正内核中的像素对的平均输出信号值，确定平均值和识别的像素值之间的差异，将差值与 阈值，并且将所选择的平均像素对值并入具有等于或小于或等于阈值的差值的像素对的所识别的像素值中。

公开(公告)号：US20070114584A1

公开(公告)日：2007-05-24

申请号：US11649777

申请日：2007-01-05

Applicant: Dmitri Jerdev ,  Nail Khaliullin

Inventor： Dmitri Jerdev ,  Nail Khaliullin

IPC: H01L31/113 ,  H01L21/00

CPC classification number: H01L27/14679 ,  H01L31/1126

Abstract: An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges.

Abstract translation: 成像器像素具有感光JFET结构，其具有位于掩埋电荷累积区上方的沟道区。 通道区域具有根据累积区域中的累积电荷的电平而变化的电阻特性。 在积分期间，入射光使得电子被积聚在掩埋积聚区域内。 沟道区域的电阻特性响应于由累积区域积累的电荷产生的场而发生变化。 因此，当向通道的一侧施加电压时，从另一侧读出的电流是存储电荷量的特征。

公开(公告)号：US20060033005A1

公开(公告)日：2006-02-16

申请号：US10915454

申请日：2004-08-11

Applicant: Dmitri Jerdev ,  Igor Subbotin ,  Ilia Ovsiannikov

Inventor： Dmitri Jerdev ,  Igor Subbotin ,  Ilia Ovsiannikov

IPC: H01L27/00

CPC classification number: H04N5/3572

Abstract: An improved non-uniform sensitivity correction algorithm for use in an imager device (e.g., a CMOS APS). The algorithm provides zones having flexible boundaries which can be reconfigured depending upon the type of lens being used in a given application. Each pixel within each zone is multiplied by a correction factor dependent upon the particular zone while the pixel is being read out from the array. The amount of sensitivity adjustment required for a given pixel depends on the type of lens being used, and the same correction unit can be used with multiple lenses where the zone boundaries and the correction factors are adjusted for each lens. In addition, the algorithm makes adjustments to the zone boundaries based upon a misalignment between the centers of the lens being used and the APS array.