Abstract:
A pixel cell with improved lag characteristics without increased noise. The pixel cell according to embodiments of the invention includes a photo-conversion device and a floating diffusion region switchably coupled to the photo-conversion device. The pixel cell includes a reset transistor, which has a first terminal electrically connected to the floating diffusion region and a second terminal switchably coupled to first and second voltage sources. The first voltage source is higher than the second voltage source. The pixel cell operates by returning a potential on the photo-conversion device to a value approximately equal to a value of a potential barrier between the photo-conversion device and the floating diffusion region prior to generating charge in the photo-conversion device.
Abstract:
Methods, systems and apparatuses proving a high dynamic range imager. Multiple photosensor integration periods are used to capture pixel signal information. A transistor gate is used to remove electrons from the photosensor between the two successive integration periods providing a non-linear pixel response characteristic having a knee point. Each pixel is calibrated for the knee point which is used during adjustment of the pixel output signal. Each pixel may also be calibrated with an arbitrary signal response curve for multiple light intensities.
Abstract:
Methods, systems and apparatuses proving a high dynamic range imager. Multiple photosensor integration periods are used to capture pixel signal information. A transistor gate is used to remove electrons from the photosensor between the two successive integration periods providing a non-linear pixel response characteristic having a knee point. Each pixel is calibrated for the knee point which is used during adjustment of the pixel output signal. Each pixel may also be calibrated with an arbitrary signal response curve for multiple light intensities.
Abstract:
Imaging devices having reduced image artifacts are disclosed. The image artifacts in the imaging devices are reduced by redirecting, absorbing or scattering IR radiation that passes through the imaging device substrate away from dark pixels.
Abstract:
An image sensor is formed with shifts among the optical parts of the sensor and the photosensitive parts of the sensor. The optical parts of the sensor may include a color filter array and/or microlenses. The photosensitive part may include any photoreceptors such as a CMOS image sensor. The shifts allow images to be formed even when the light received at a given pixel location varies in angle of incidence as a function of pixel location within the array. The relative shifts among the pixel components may be, for example, plus or minus some fraction of the pixel pitch. The shift may be variable across the array or may be constant across the array and may be deterministically determined.
Abstract:
A pixel having no dedicated reset control line. By using the voltage on the column line to control the gate of the reset transistor, there is no need to provide a dedicate reset control line.
Abstract:
Methods for operating a pixel cell include efficient transferring of photo-charges using multiple pulses to a transistor transfer gate during a charge integration period for an associated photosensor. The pixel cell can be operated with efficient transfer characteristics in either normal or high dynamic range (HDR) mode. The high dynamic range can be realized by either operating an optional HDR transistor or by fluctuating the voltage applied to a reset gate.
Abstract:
An image sensor is formed with shifts among the optical parts of the sensor and the photosensitive parts of the sensor. The optical parts of the sensor may include a color filter array and/or microlenses. The photosensitive part may include any photoreceptors such as a CMOS image sensor. The shifts allow images to be formed even when the light received at a given pixel location varies in angle of incidence as a function of pixel location within the array. The relative shifts among the pixel components may be, for example, plus or minus some fraction of the pixel pitch. The shift may be variable across the array or may be constant across the array and may be deterministically determined.
Abstract:
A pixel having no dedicated reset control line. By using the voltage on the column line to control the gate of the reset transistor, there is no need to provide a dedicate reset control line.
Abstract:
A method, apparatus, and system providing a pixel having increased conversion gain by decreasing the size of an output charge storage region to less than that of a photosensor. A pixel readout is executed by multiple sampling signals based on portions of charge transferred from the photosensor to the storage region and combining the sampled signals in either the analog domain or the digital domain into a representative pixel output signal.