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公开(公告)号：US20210116637A1
公开(公告)日：2021-04-22
申请号：US16658103
申请日：2019-10-20
摘要： A CMOS compatible material platform for photonic integrated circuitry is invented. The material platform has SiO2 as cladding material, at least a bottom layer made of moderate refractive index material(s) fabricated first on a unpatterned SOI wafer, a bonded system substrate, a set of photonic circuitry made within a SOI layer of the SOI wafer after its substrate and BOX layer removed, and some coupling devices enabling light travelling between the devices made within these two layers. A solution to provide IIIV laser diodes boned and embedded in the system substrate is also proposed. The invention provides a great material platform to offer full set of photonic building blocks for all sort of different applications such as photonic circuitry for optical neural network, quantum computing, telecommunication, data communication, optical switching, optical sensing, passive and/or active Si optical interposer with its size even bigger than lithography step field size.
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公开(公告)号：US20210080648A1
公开(公告)日：2021-03-18
申请号：US16571081
申请日：2019-09-14
摘要： A CMOS compatible heterogeneously integrated material platform for photonic integrated circuitry is invented. The material platform has SiO2 as cladding material, at least a bottom layer made of moderate refractive index (contrast) material(s), a bonded single crystal Si layer transfer from either a SOI wafer or a ion implanted single crystal Si wafer ready for ion cut split on top of the bottom layer, and some devices enabling light coupling between the devices made within these two layers. The invention provides a great material platform to offer a full set of photonic building blocks for all sorts of different applications such as photonic circuitry for optical neural network, quantum computing, telecommunication, data communication, optical switching, optical sensing, passive and/or active Si optical interposer with its size even bigger than lithography step field.
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公开(公告)号：US10935722B1
公开(公告)日：2021-03-02
申请号：US16571081
申请日：2019-09-14
摘要： A CMOS compatible heterogeneously integrated material platform for photonic integrated circuitry is invented. The material platform has SiO2 as cladding material, at least a bottom layer made of moderate refractive index (contrast) material(s), a bonded single crystal Si layer transfer from either a SOI wafer or a ion implanted single crystal Si wafer ready for ion cut split on top of the bottom layer, and some devices enabling light coupling between the devices made within these two layers. The invention provides a great material platform to offer a full set of photonic building blocks for all sorts of different applications such as photonic circuitry for optical neural network, quantum computing, telecommunication, data communication, optical switching, optical sensing, passive and/or active Si optical interposer with its size even bigger than lithography step field.
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公开(公告)号：US20200382092A1
公开(公告)日：2020-12-03
申请号：US16428860
申请日：2019-05-31
申请人： Dong Li , Ying Ma , Ge Yi , Zongrong Liu
发明人： Dong Li , Ying Ma , Ge Yi , Zongrong Liu
摘要： An acoustic wave device system with its piezoelectric layer originating from a single crystal piezoelectric wafer/substrate is invented along with sets of detailed process steps to fabricate such a device using wafer-to-wafer and/or die-to-wafer bonding technologies. The proposed device system is particularly good to make bulk acoustic wave (BAW) devices. Methods allowing the single crystal piezoelectric wafer/substrate to be re-used are also given. The proposed methods include detailed process steps to allow heterogeneous integration of electrical chips into the system in a very cost efficient manner. The invention provides a practical and low-cost approach to fabricate the radio frequency (RF) front end chip incorporating RF filters and electronic components integrated into a small footprint which is particularly useful for mobile device and RF stations.
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公开(公告)号：US11626312B2
公开(公告)日：2023-04-11
申请号：US16987240
申请日：2020-08-06
IPC分类号： H01L21/687 , H01L21/68 , H01L21/673 , H01L21/67
摘要： An Fan-out packaging system, comprising dedicated frame with associated movable metallic spring feature(s) for incoming known-good-die (KGD), is invented. The movable spring anchor(s) along with the boundaries of the frame locks the KGD in its designated position during EMC implementation and subsequent processes. In this system/approach, the position accuracy of KGDs during the wafer reconstitution process will be mostly dominated by the dicing accuracy. The proposed system is a very low cost approach as it does not need the expensive software/tool set and does not have a low throughput site-to-site lithography correction during exposure after metrology is carried out for every flash field. This system is particularly useful for chiplet consisting of component chips from different technologies and from substrate made of different material. The frames can be further used as part of function component for the packaged system either as electromagnetic shield, or heat dissipation/heat sink, or even RF antenna as well as other passive devices or active components.
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6.发明申请Magnetoresistive random access memory cell with independently operating read and write components 审中-公开具有独立操作的读写组件的磁阻随机存取存储单元公开(公告)号：US20130114334A1
公开(公告)日：2013-05-09
申请号：US13288860
申请日：2011-11-03
申请人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
发明人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A new class of the memory cell is proposed. There are two separated pulse data writing and sensing current paths. The in-plane pulse current is used to flip the magnetization direction of the perpendicular-anisotropy data storage layer sandwiched between a heavy metal writing current-carrying layer and a dielectric layer. The magnetization state within data storage layer is detected by the patterned perpendicular-anisotropy tunneling magnetoresistive (TMR) stack via the output potential of the stack. Two detailed memory cells are proposed: in one proposed cell, the data storage layer is independent from but kept close to the sensing TMR stack, whose magnetization orientation affects magnetization configuration within the free layer of the TMR stack, therefor ultimately affects the output potential of the stack; in the other proposed cell, the perpendicular-anisotropy data storage layer is the free layer of the sensing TMR stack, whose magnetization state will directly affect the output potential of the stack when sensing current passes through.
摘要翻译： 提出了一类新的存储单元。 有两个分离的脉冲数据写入和感测电流路径。 面内脉冲电流用于翻转夹在重金属写入载流层和电介质层之间的垂直各向异性数据存储层的磁化方向。 数据存储层内的磁化状态通过图案化的垂直各向异性隧道磁阻（TMR）堆叠通过堆叠的输出电位来检测。 提出了两个详细的存储单元：在一个提出的单元中，数据存储层独立于但保持靠近感测TMR堆栈，其磁化方向影响TMR堆栈自由层内的磁化配置，从而最终影响 堆栈 在另一个提出的单元中，垂直各向异性数据存储层是感测TMR堆栈的自由层，当感测电流通过时，其磁化状态将直接影响堆叠的输出电位。
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公开(公告)号：US20210379234A1
公开(公告)日：2021-12-09
申请号：US16946093
申请日：2020-06-05
IPC分类号： A61L9/20
摘要： A air purification system, whose air flow pipeline made of highly reflective and low absorptive material for UVC or UVB light acts also as a UV light waveguide, with a UVC and/or UVB LED built inside the pipeline, is invented. The system is based on the design concept of maximizing UV light exposure dosage to deactivate all the bioaerosols in the air flow pass through the system. The proposed system can be easily integrated into travel pillow, backbag, handbag, belt bag as well as air supply systems for public and private transport systems. The system provides purified air supply for travelers in the closed environment such as in a airplane, or on a train against various dangerous viruses including COVID-19 and SARS virus. It can also be used in office during flu season as well as provide cleaned air supply to its users against the hay-fever.
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公开(公告)号：US20210100924A1
公开(公告)日：2021-04-08
申请号：US16592775
申请日：2019-10-04
摘要： A portable or handhold air purification system, whose air flow pipeline made of highly reflective and low absorptive material for UVC or UVB light acts also as a UV light waveguide, is invented. The system is based on the design concept of maximizing UV light exposure dosage to deactivate all the pollutants in the air flow going through to allow the system to use UVC and/or UVB LED. The system also has some features around the middle point of the air flow path to either further increase light exposure, or clean the air flow through the interaction between the specially designed nano particles and incoming UV light. Moreover, an ozone filter and an air heating devices, with energy either from the heat sink of LED's TEC or a device based on plasmonic resonance induced photothermal effects, are placed near the air outlet of the system for further enhancement. The system is very useful for travelers in the closed environment such as in a airplane, or on a train. It can also use in office during flu season as well as provide cleaned air supply to its users against the hay-fever.
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公开(公告)号：US20210005572A1
公开(公告)日：2021-01-07
申请号：US16504271
申请日：2019-07-07
申请人： Dong Li , Ying Ma , Ge Yi , Zongrong Liu
发明人： Dong Li , Ying Ma , Ge Yi , Zongrong Liu
IPC分类号： H01L23/00 , H01L21/56 , H01L21/683
摘要： A piece of chip-to-wafer and chip-to-chip bonding equipment, which has innovative designs enabling chip(s) from either a diamagnetic carrier or a diced wafer to expose the chip back side surface for pickup, is invented. The designs either use a levitation technology, or air dynamic, or a novel mechanical design to fulfill the chip front surfaces touchless requirement to avoid the chip surface contamination. The invented chip bonder is particularly useful for bonding applications which require using chips with zero tolerance of particle and/or contamination on the chip front surfaces or bonding surfaces.
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10.发明授权公开(公告)号：US09293694B2
公开(公告)日：2016-03-22
申请号：US13288860
申请日：2011-11-03
申请人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
发明人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A new class of the memory cell is proposed. There are two separated pulse data writing and sensing current paths. The in-plane pulse current is used to flip the magnetization direction of the perpendicular-anisotropy data storage layer sandwiched between a heavy metal writing current-carrying layer and a dielectric layer. The magnetization state within data storage layer is detected by the patterned perpendicular-anisotropy tunneling magnetoresistive (TMR) stack via the output potential of the stack. Two detailed memory cells are proposed: in one proposed cell, the data storage layer is independent from but kept close to the sensing TMR stack, whose magnetization orientation affects magnetization configuration within the free layer of the TMR stack, therefor ultimately affects the output potential of the stack; in the other proposed cell, the perpendicular-anisotropy data storage layer is the free layer of the sensing TMR stack, whose magnetization state will directly affect the output potential of the stack when sensing current passes through.
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