公开(公告)号：US09230886B2

公开(公告)日：2016-01-05

申请号：US14575639

申请日：2014-12-18

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Lup San Leong ,  Zheng Zou ,  Alex Kai Hung See ,  Hai Cong ,  Xuesong Rao ,  Yun Ling Tan ,  Huang Liu

IPC: H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H01L21/02 ,  H01L21/48

CPC classification number: H01L23/481 ,  H01L21/02107 ,  H01L21/486 ,  H01L21/76898 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/13009 ,  H01L2224/1357

Abstract: Semiconductor devices with through silicon vias (TSVs) are formed without copper contamination. Embodiments include exposing a passivation layer surrounding a bottom portion of a TSV in a silicon substrate, forming a silicon composite layer over the exposed passivation layer and over a bottom surface of the silicon substrate, forming a hardmask layer over the silicon composite layer and over the bottom surface of the silicon substrate, removing a section of the silicon composite layer around the bottom portion of the TSV using the hardmask layer as a mask, re-exposing the passivation layer, and removing the hardmask layer and the re-exposed passivation layer to expose a contact for the bottom portion of the TSV.