公开(公告)号：US20180118568A9

公开(公告)日：2018-05-03

申请号：US14860226

申请日：2015-09-21

申请人： GEORGIA TECH RESEARCH CORPORATION

发明人： Michael William Moseley ,  William Alan Doolittle

IPC分类号： C01B21/06 ,  H01L29/20 ,  H01L29/30

CPC分类号： C01B21/0632 ,  C01P2006/40 ,  C01P2006/90 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/2056 ,  H01L29/2003 ,  H01L29/30

摘要： Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AN, InN, GaN, InGaN, and AlInGaN.

公开(公告)号：US20160009556A1

公开(公告)日：2016-01-14

申请号：US14860226

申请日：2015-09-21

申请人： GEORGIA TECH RESEARCH CORPORATION

发明人： Michael William Moseley ,  William Alan Doolittle

IPC分类号： C01B21/06 ,  H01L29/30 ,  H01L29/20

CPC分类号： C01B21/0632 ,  C01P2006/40 ,  C01P2006/90 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/2056 ,  H01L29/2003 ,  H01L29/30

摘要： Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AN, InN, GaN, InGaN, and AlInGaN.

摘要翻译： 包括III-III族氮化物合金的MBE生长的系统和方法，包括建立约250℃至约850℃的平均反应温度范围; 在氮气流速下引入氮气通量; 以第一金属流速引入第一金属焊剂; 并且根据第一流量占空比周期性地停止和重新启动第一金属焊剂。 根据另一个实施方案，该系统包括以氮气流速提供氮气的氮源，以及第一金属源，其包括以第一金属流速提供第一金属的第一金属渗出池和第一金属快门， 根据第一流动占空比周期性地打开和关闭以消除并重新开始来自第一金属源的第一金属的流动。 生产的合金包括AN，InN，GaN，InGaN和AlInGaN。

公开(公告)号：US10000381B2

公开(公告)日：2018-06-19

申请号：US14860226

申请日：2015-09-21

申请人： GEORGIA TECH RESEARCH CORPORATION

发明人： Michael William Moseley ,  William Alan Doolittle

IPC分类号： H01L29/30 ,  C01B21/06 ,  C30B23/02 ,  C30B29/40 ,  H01L21/02 ,  H01L21/205 ,  H01L29/20

CPC分类号： C01B21/0632 ,  C01P2006/40 ,  C01P2006/90 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/2056 ,  H01L29/2003 ,  H01L29/30

摘要： Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AlN, InN, GaN, InGaN, and AlInGaN.