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10 条记录 (耗时 0.023 秒)

    PHOTODETECTOR ELEMENT AND IMAGE SENSOR
    1.
    发明申请
    PHOTODETECTOR ELEMENT AND IMAGE SENSOR 有权

    公开(公告)号：US20220406850A1

    公开(公告)日：2022-12-22

    申请号：US17884532

    申请日：2022-08-09

    申请人： FUJIFILM Corporation

    发明人： Masashi ONO ,  Hirotaka SATOU ,  Toshihiro ISE

    IPC分类号： H01L27/30 ,  H01L51/44 ,  H01L51/42 ,  C09K11/66 ,  C09K11/06

    摘要： There is provided a photodetector element including a first electrode layer; a second electrode layer; a photoelectric conversion layer provided between the first electrode layer and the second electrode layer; an electron transport layer provided between the first electrode layer and the photoelectric conversion layer; and a hole transport layer provided between the photoelectric conversion layer and the second electrode layer, in which the photoelectric conversion layer contains an aggregate of semiconductor quantum dots that contain a metal atom and contains a ligand coordinated to the semiconductor quantum dot, the hole transport layer contains an organic semiconductor, and the second electrode layer is formed of a metal material containing at least one metal atom selected from Au, Pt, Ir, Pd, Cu, Pb, Sn, Zn, Ti, W, Mo, Ta, Ge, Ni, Cr, or In. There is also provided an image sensor including the photodetector element.

    PHOTOELECTRIC CONVERSION ELEMENT, AND SOLAR CELL USING THE SAME
    5.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT, AND SOLAR CELL USING THE SAME 审中-公开

    公开(公告)号：US20180122587A1

    公开(公告)日：2018-05-03

    申请号：US15852291

    申请日：2017-12-22

    申请人： FUJIFILM Corporation

    发明人： Hirotaka SATOU ,  Naoyuki HANAKI ,  Toshihiro ISE ,  Kenji SHIROKANE

    IPC分类号： H01G9/20

    CPC分类号： H01G9/2059 ,  H01G9/2027 ,  H01G9/2077 ,  H01L51/44 ,  Y02E10/549

    摘要： Provided is a photoelectric conversion element including a first electrode that includes a photosensitive layer, which includes a light absorbing agent, and a second electrode. The light absorbing agent includes a compound having a perovskite-type crystal structure that includes a cation of a cationic organic group A, a cation of a metal atom M other than the element of Group 1, and an anion of an anionic atom X. A hole transport layer, which includes an organic hole transporting material, is provided between the first electrode and the second electrode. The organic hole transporting material has a molecular weight of 6,000 or less and includes halogen, a halogenated alkyl group, or a group represented by RA—X—*, where X represents S, NRB, or O, RA and RB represent a halogenated alkyl group, and * represents a bonding position.

    PHOTOELECTRIC CONVERSION ELEMENT, DYE-SENSITIZED SOLAR CELL, METAL COMPLEX DYE, AND DYE SOLUTION
    8.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT, DYE-SENSITIZED SOLAR CELL, METAL COMPLEX DYE, AND DYE SOLUTION 审中-公开

    公开(公告)号：US20170092434A1

    公开(公告)日：2017-03-30

    申请号：US15372471

    申请日：2016-12-08

    申请人： FUJIFILM Corporation

    发明人： Kazuhiro TSUNA ,  Kousuke WATANABE ,  Hiroki SUGIURA ,  Tomoaki YOSHIOKA ,  Toshihiro ISE

    IPC分类号： H01G9/20 ,  C07F15/00 ,  H01L51/00 ,  C09B57/10

    CPC分类号： H01G9/2059 ,  C07F15/0053 ,  C09B23/105 ,  C09B57/10 ,  H01G9/2018 ,  H01G9/2022 ,  H01G9/2027 ,  H01L51/0086 ,  Y02E10/542

    摘要： A photoelectric conversion element having an electrically conductive support, a photoconductor layer including an electrolyte, a charge transfer layer including an electrolyte, and a counter electrode, in which the photoconductor layer has semiconductor fine particles carrying a metal complex dye represented by the following Formula (1), and a dye-sensitized solar cell; and a metal complex dye and a dye solution, each of which is used in the photoelectric conversion element and the dye-sensitized solar cell, ML1L2(X)n1.CImY  Formula (1) in the formula, M represents a metal ion, L1 represents a tridentate ligand having a group LV represented by the following Formula (LV-1) or (LV-2); L2 represents a bidentate or tridentate ligand including at least one of aromatic ring groups having a specific sp2 carbon atom to which a substituent is bonded; X represents a monodentate ligand; n1 represents 0 or 1; CI represents a required counterion; and mY represents an integer of 0 to 3, —RV1═RV2—RV31  Formula (LV-1) —C≡C—RV32  Formula (LV-2) in the formulae, RV1 and RV2 each independently represent a nitrogen atom or CRV4, RV4 represents a hydrogen atom or a substituent, RV31 represents a fused polycyclic aromatic ring group or a fused polycyclic heterocyclic group, and RV32 represents a fused polycyclic aromatic ring group or a heteroaryl group.

    RADIATION DETECTOR
    9.
    发明申请
    RADIATION DETECTOR 审中-公开
    辐射探测器

    公开(公告)号：US20150255636A1

    公开(公告)日：2015-09-10

    申请号：US14715614

    申请日：2015-05-19

    申请人： FUJIFILM CORPORATION

    发明人： Seiji YAMASHITA ,  Toshihiro ISE

    IPC分类号： H01L31/0272 ,  H01L31/117

    CPC分类号： H01L31/0272 ,  H01L27/14676 ,  H01L31/085 ,  H01L31/095 ,  H01L31/115 ,  H01L31/117 ,  H01L31/20 ,  H01L51/0037 ,  H01L51/0046 ,  H01L51/4213 ,  H01L2031/0344 ,  Y02E10/549

    摘要： A radiation detector (10) which has a multilayer structure that includes: a first electrode (34); a second electrode (49) that is disposed so as to face the first electrode; a selenium layer (48) that is disposed between the first electrode and the second electrode and contains amorphous selenium; a first blocking organic layer (38) that is adjacent to the selenium layer, between the first electrode and the selenium layer, and that contains a hole transport material having an electron affinity of 3.7 eV or less; and a second blocking organic layer (37) that is adjacent to the selenium layer, between the second electrode and the selenium layer, and that contains an electron transport material having an ionization potential of 5.9 eV or more. This radiation detector (10) has low dark current, excellent durability, and less afterimages.

    摘要翻译： 一种具有多层结构的放射线检测器（10），包括：第一电极（34）; 设置成与第一电极相对的第二电极（49）; 设置在第一电极和第二电极之间并含有非晶硒的硒层（48）; 位于第一电极和硒层之间的与硒层相邻的第一阻挡有机层（38），并且包含电子亲和力为3.7eV以下的空穴传输材料; 以及与第二电极和硒层之间的硒层相邻的第二阻挡有机层（37），并且包含电离势为5.9eV以上的电子传输材料。 该辐射检测器（10）具有低暗电流，优异的耐久性和较少的残影。

    ORGANIC THIN FILM TRANSISTOR, POLYMER, COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND COMPOUND
    10.
    发明申请
    ORGANIC THIN FILM TRANSISTOR, POLYMER, COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND COMPOUND 有权

    公开(公告)号：US20220238809A1

    公开(公告)日：2022-07-28

    申请号：US17715080

    申请日：2022-04-07

    申请人： FUJIFILM Corporation

    发明人： Hiroki SUGIURA ,  Toshihiro ISE

    IPC分类号： H01L51/00 ,  H01L51/05

    摘要： An object of the present invention is to provide an organic thin film transistor having excellent atmospheric stability. Another object of the present invention is to provide a polymer, a composition, an organic semiconductor film, and a compound.
    The organic thin film transistor of the present invention has an organic semiconductor film which includes a polymer having a partial structure represented by Formula (1). In Formula (1), X1 represents a sulfur atom or a selenium atom, X2 to X4 each independently represent a sulfur atom, an oxygen atom, or a selenium atom, Y1 to Y4 each independently represent a group represented by —CR1═ or a nitrogen atom, where at least one of Y1 to Y4 represents a nitrogen atom, R1 represents a hydrogen atom or a substituent, and * represents a bonding position.