公开(公告)号：US11456412B2

公开(公告)日：2022-09-27

申请号：US16890505

申请日：2020-06-02

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung Park ,  Atsushi Mizutani

IPC: H01L43/12 ,  H01L21/3065 ,  H01L21/308 ,  H01L43/08 ,  H01L27/105 ,  C23F1/40 ,  C23F4/00 ,  C23F1/30

Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.

公开(公告)号：US09809746B2

公开(公告)日：2017-11-07

申请号：US14956500

申请日：2015-12-02

Applicant: FUJIFILM Corporation

Inventor： Yasuo Sugishima ,  Atsushi Mizutani ,  Keeyoung Park

IPC: C09K13/06 ,  C09K13/08 ,  H01L21/3213

CPC classification number: C09K13/08 ,  H01L21/32134

Abstract: There is provided an etching liquid including nitric acid; a fluorine-containing compound; and a nitrogen-containing organic compound A containing a nitrogen atom, or a phosphorus-containing compound B.

公开(公告)号：US10714682B2

公开(公告)日：2020-07-14

申请号：US16245570

申请日：2019-01-11

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung Park ,  Atsushi Mizutani

IPC: H01L43/12 ,  H01L21/3065 ,  H01L21/308 ,  H01L43/08 ,  H01L27/105 ,  C23F1/40 ,  C23F4/00 ,  C23F1/30

Abstract: An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.

公开(公告)号：US10049883B2

公开(公告)日：2018-08-14

申请号：US15497224

申请日：2017-04-26

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung Park ,  Atsushi Mizutani

IPC: H01L21/304 ,  C11D17/08 ,  C11D3/04 ,  C11D3/26 ,  C11D3/30 ,  H01L21/027 ,  H01L43/12 ,  H01L27/105 ,  B41N3/08 ,  G03F7/40

Abstract: An object is to provide an MRAM dry etching residue removal composition capable of removing dry etching residues while suppressing damage to a substrate containing a specific metal in a step of producing an MRAM, a method of producing a magnetoresistive random access memory using the same, and a cobalt removal composition having excellent cobalt removability. The MRAM dry etching residue removal composition of the present invention contains a strong oxidizing agent and water. In addition, the cobalt removal composition of the present invention contains orthoperiodic acid and water.

公开(公告)号：US12150386B2

公开(公告)日：2024-11-19

申请号：US17820056

申请日：2022-08-16

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung Park ,  Atsushi Mizutani

IPC: H10N50/01 ,  C23F1/30 ,  C23F1/40 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/308 ,  H01L27/105 ,  H10N50/10

Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.