公开(公告)号：US10020343B2

公开(公告)日：2018-07-10

申请号：US15275134

申请日：2016-09-23

Applicant: FLIR Systems, Inc.

Inventor： Edward K. Huang ,  Andrew D. Hood ,  Bryan Gall ,  Paula Heu ,  Richard E. Bornfreund

IPC: H01L27/146 ,  H04N5/33

CPC classification number: H01L27/14687 ,  H01L27/1462 ,  H01L27/14634 ,  H01L27/1465 ,  H01L27/14685 ,  H01L27/1469 ,  H01L27/14694 ,  H01L27/14696 ,  H01L27/14698 ,  H04N5/33

Abstract: Systems and methods may be provided for fabricating infrared focal plane arrays. The methods include providing a device wafer, applying a coating to the device wafer, mounting the device wafer to a first carrier wafer, thinning the device wafer while the device wafer is mounted to the first carrier wafer, releasing the device wafer from the first carrier wafer, singulating the device wafer into individual dies, each die having an infrared focal plane array, and hybridizing the individual dies to a read out integrated circuit.

公开(公告)号：US10453979B2

公开(公告)日：2019-10-22

申请号：US15384052

申请日：2016-12-19

Applicant: FLIR Systems, Inc.

Inventor： Edward K. Huang ,  Andrew D. Hood

IPC: H01L31/0352 ,  H04N5/33 ,  H01L27/144 ,  H01L31/18 ,  H01L31/0304 ,  H01L31/109 ,  H02S40/44

Abstract: Materials and methods may be provided for short-wave infrared (SWIR) superlattice materials. The superlattice material includes a first sub-layer comprising InAs, and a second sub-layer adjacent to the first sub-layer including AlSb, AlAsSb, or InAlAsSb.

公开(公告)号：US20170179317A1

公开(公告)日：2017-06-22

申请号：US15384052

申请日：2016-12-19

Applicant: FLIR Systems, Inc.

Inventor： Edward K. Huang ,  Andrew D. Hood

IPC: H01L31/0352 ,  H04N5/33 ,  H01L27/144 ,  H01L31/18 ,  H01L31/0304 ,  H01L31/109

CPC classification number: H01L31/035263 ,  H01L27/1446 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/1844 ,  H02S40/44 ,  H04N5/33

Abstract: Materials and methods may be provided for short-wave infrared (SWIR) superlattice materials. The superlattice material includes a first sub-layer comprising InAs, and a second sub-layer adjacent to the first sub-layer including AlSb, AlAsSb, or InAlAsSb.

公开(公告)号：US20170207271A1

公开(公告)日：2017-07-20

申请号：US15275134

申请日：2016-09-23

Applicant: FLIR Systems, Inc.

Inventor： Edward K. Huang ,  Andrew D. Hood ,  Bryan Gall ,  Paula Heu ,  Richard E. Bornfreund

IPC: H01L27/146 ,  H04N5/33

CPC classification number: H01L27/14687 ,  H01L27/1462 ,  H01L27/14634 ,  H01L27/1465 ,  H01L27/14685 ,  H01L27/1469 ,  H01L27/14694 ,  H01L27/14696 ,  H01L27/14698 ,  H04N5/33

Abstract: Systems and methods may be provided for fabricating infrared focal plane arrays. The methods include providing a device wafer, applying a coating to the device wafer, mounting the device wafer to a first carrier wafer, thinning the device wafer while the device wafer is mounted to the first carrier wafer, releasing the device wafer from the first carrier wafer, singulating the device wafer into individual dies, each die having an infrared focal plane array, and hybridizing the individual dies to a read out integrated circuit.