专利检索 ap:("Everspin Technologies, Inc.") AND inv:"Shukai YE" 第 1 页

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发明申请
METHODS OF MANUFACTURING INTEGRATED CIRCUITS USING ISOTROPIC AND ANISOTROPIC ETCHING PROCESSES 审中-公开

公开(公告)号：US20190173004A1

公开(公告)日：2019-06-06

申请号：US16202496

申请日：2018-11-28

申请人： Everspin Technologies, Inc.

发明人： Sarin A. DESHPANDE , Jon SLAUGHTER , Cong HAI , Hyunwoo YANG , Naganivetha THIYAGARAJAH , Shukai YE

IPC分类号： H01L43/12 , H01L27/22 , H01L43/02 , H01L43/10

摘要： A method of fabricating a magnetoresistive device includes etching a magnetoresistive stack using a first etching process to form one or more sidewalls, and etching the stack using a second etching process after forming the one or more sidewalls. Wherein, the second etching process may be relatively more isotropic than the first etching process.