摘要:
A paint composition for forming a three-dimensional film including 1 to 10 wt % of a polymer hollow microsphere and 5 to 40 wt % of a polymer resin based on a total weight of the composition, wherein the polymer hollow microsphere has a density of 10 to 100 kg/m3 and a particle size of 10 to 200 μm.
摘要翻译:一种用于形成包含1-10重量%聚合物中空微球体和5-40重量%聚合物树脂的三维膜的涂料组合物,其中聚合物中空微球的密度为10 至100kg / m 3,粒径为10〜200μm。
摘要:
A conductive paste may include a conductive component and an organic vehicle. The conductive component may include an amorphous metal. The amorphous metal may have a lower resistivity after a crystallization process than before the crystallization process, and at least one of a weight gain of about 4 mg/cm2 or less and a thickness increase of about 30 μm or less after being heated in a process furnace at a firing temperature.
摘要翻译:导电膏可以包括导电组分和有机载体。 导电组分可以包括无定形金属。 无定形金属在结晶过程之后可能具有比结晶过程之前更低的电阻率,并且在过程中加热后,重量增加约4mg / cm 2或更小,厚度增加约30μm或更小的至少之一 炉在烧制温度。
摘要:
Disclosed herein is a method for fabricating a flexible semiconductor electrode including preparing a first substrate having a semiconductor layer disposed on a release layer, forming a second substrate having an adhesive layer disposed on a conductive material-coated flexible substrate, and pressing the first substrate against the second substrate under heat effective to transfer the semiconductor layer from the first substrate to the second substrate. The method allows for a flexible semiconductor electrode to be fabricated at low temperatures in a stable manner, and the flexible semiconductor electrode allows for high photoelectric conversion efficiency in a solar cell.
摘要:
The following discloses and describes a zero capacitor RAM as well as a method for manufacturing the same. The zero capacitor RAM includes an SOI substrate. This SOI substrate is composed of a stacked structure of a silicon substrate, an embedded insulation film and a silicon layer. This layer is patterned into line types to constitute active patterns. Moreover, a first insulation layer forms between the active patterns and gates form on the active patterns as well as the first insulation layer to extend perpendicularly to the active patterns. In addition, a source forms in the active pattern on one side of each gate, a drain forms in the active pattern on the other side of each gate which is achieved by filling a metal layer. Continuing, a contact plug forms between the gates on the source and an interlayer dielectric forms on the contact plug in addition to the gates. Finally, a bit line forms on the interlayer dielectric to extend perpendicularly to the gates and come into contact with the drain.
摘要:
Disclosed is a polymeric surfactant for high dielectric polymer composites, a method of preparing the same, and a high dielectric polymer composite including the same. The polymeric surfactant for high dielectric polymer composites, which includes a head portion having high affinity for a conductive material and a tail portion having high affinity for a polymer resin, forms a passivation layer surrounding the conductive material in the high dielectric polymer composite including the polymeric surfactant, thus ensuring and controlling a high dielectric constant.
摘要:
Disclosed herein are a dispersant for dispersing nanoparticles that are surface-bound with capping ligands in a polymer matrix having an epoxide group, a method for dispersing the nanoparticles using the dispersant, and a nanoparticle-containing thin film including the dispersant.
摘要:
Disclosed herein is a carboxylic ester dispersant shown in the following Formula 1 and a sulfide phosphor paste composition containing the dispersant. The dispersant improves the dispersibility of the sulfide phosphor paste composition and prevents oxidation by a solvent, thus improving processability and the luminescent properties of a phosphor film made from the paste and of a display produced using the film. In Formula 1, n is 1-20.
摘要:
A side-bonding method of a flip-chip semiconductor device, a MEMS device package and a package method using the same, in which firm bonding and insensitivity to surface roughness may be obtained, include forming a UBM on a bonding line of a lower substrate having a semiconductor device formed thereon, plating solder on the UBM on the lower substrate, forming a trench in the upper substrate to contact the lower substrate at a location corresponding to a location of the solder and forming a second UBM in the trench, coupling the upper substrate and the lower substrate by inserting the solder into the trench, and heating the upper substrate and the lower substrate at a temperature higher than a melting point of the solder so that the solder is wetted toward sides of the trench to bond the upper substrate and the lower substrate.
摘要:
A conductive paste including a conductive powder, a metallic glass including aluminum (Al) and a first element which forms a solid solution with the aluminum (Al), and an organic vehicle.
摘要:
A conductive paste includes a conductive powder, a metallic glass, and an organic vehicle. The metallic glass includes a first element, a second element having a higher absolute value of Gibbs free energy of oxide formation than the first element, and a third element having an absolute value of Gibbs free energy of oxide formation of about 1000 kJ/mol or less at a baking temperature and a eutectic temperature with the conductive powder of less than about 1000° C. An electronic device and a solar cell may include an electrode formed using the conductive paste.