公开(公告)号：US09159583B2

公开(公告)日：2015-10-13

申请号：US14310784

申请日：2014-06-20

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang Choon Ko ,  Jae Kyoung Mun ,  Woojin Chang ,  Sung-Bum Bae ,  Young Rak Park ,  Chi Hoon Jun ,  Seok-Hwan Moon ,  Woo-Young Jang ,  Jeong-Jin Kim ,  Hyungyu Jang ,  Je Ho Na ,  Eun Soo Nam

IPC: H01L21/33 ,  H01L21/321 ,  H01L21/02 ,  H01L21/283

CPC classification number: H01L21/3212 ,  H01L21/0254 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786

Abstract: Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.

Abstract translation: 提供一种制造氮化物半导体器件的方法。 该方法包括在生长衬底上形成多个电极，在其上依次层叠有第一和第二氮化物半导体层，分别在多个电极上形成上部金属层，去除生长衬底以暴露第一氮化物半导体层的下表面 并且在第一氮化物半导体层的暴露的下表面上顺序地形成第三氮化物半导体层和下金属层。