Abstract:
Provided herein is an external-cavity type wavelength tunable laser including gain medium configured to generate an optical signal and amplify the generated optical signal based on a bias current applied; an external reflector configured to be coupled optically with the gain medium; a second thermistor provided on the side of the gain medium and configured to measure a temperature of the gain medium; a first thermistor provided on the external reflector and configured to measure a temperature of the external reflector; and a thermoelectric cooler configured to transfer generated heat based on the temperatures measured by the first and second thermistors.
Abstract:
Provided are a beam tracking module, a free-space quantum communication device, and a free-space optical communication device. The beam tracking module for free-space quantum communication includes a controller configured to determine a divergence angle of a reference beam on the basis of divergence angle control data, a beam path control optical part configured to output the reference beam, and a beam transmitter configured to adjust the divergence angle through the beam path control optical part so that the reference beam having the determined divergence angle is output.
Abstract:
Provided herein is a method and apparatus for implementing a tunable light source, the method including performing a first calibration of obtaining a tuning curve representing changes of a wavelength as a function of a heater power up to a wavelength range where the external cavity type tunable light source is tunable; performing a second calibration of obtaining a detuning curve of the tunable wavelength range; and setting a wavelength by performing a wavelength locking.
Abstract:
There is provided a method for manufacturing a Mach-Zehnder electrooptic modulator including forming an intrinsic semiconductor layer including a Group III-V compound semiconductor on a Group III-V compound semiconductor substrate having an active region and a passive region, doping a first impurity in the intrinsic semiconductor layer corresponding to the active region to form a core layer disposed on the substrate and undoped with the first impurity and an upper clad layer disposed on the core layer and including a region doped with the first impurity, and patterning the core layer and the upper clad layer.
Abstract:
Provided herein is a tunable external cavity laser comprising: a gain medium configured to create an optical signal; an external reflector configured to be coupled to the gain medium, and to comprise a Bragg grating; and a phase control section configured to adjust a phase of an entire laser, but to adjust a wavelength of the laser to a longer wavelength than a peak reflectivity of the external reflector.
Abstract:
Disclosed are a method and an apparatus for selecting a wavelength by a wavelength tunable optical receiver. The method of selecting a wavelength of a wavelength tunable optical receiver includes: receiving, by the wavelength tunable optical receiver, an optical signal from a wavelength tunable optical transmitter; filtering, by the wavelength tunable optical receiver, the optical signal through a low frequency band electrical signal filter, and obtaining a low frequency signal; determining, by the wavelength tunable optical receiver, whether the low frequency signal is a valid signal based on a current value of the low frequency signal; and when the low frequency signal is the valid signal, obtaining, by the wavelength tunable optical receiver, an enable condition of a wavelength tunable optical filter through which the low frequency signal is selected, in which the low frequency signal includes a control/monitoring signal.