公开(公告)号：US12046576B2

公开(公告)日：2024-07-23

申请号：US17435752

申请日：2020-02-27

Applicant: DANFOSS SILICON POWER GMBH

Inventor： Martin Becker ,  Dirk Dittmann

IPC: H01L23/00 ,  H01L25/07 ,  H05K1/18 ,  H05K3/32

CPC classification number: H01L24/95 ,  H01L24/75 ,  H01L24/83 ,  H05K3/32 ,  H01L24/29 ,  H01L25/071 ,  H01L25/072 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/75265 ,  H01L2224/75315 ,  H01L2224/7598 ,  H01L2224/75984 ,  H01L2224/83001 ,  H01L2224/83203 ,  H01L2224/83222 ,  H01L2224/8384 ,  H01L2224/95001 ,  H05K1/18 ,  H05K2201/10015 ,  H05K2201/10022 ,  H05K2201/1003 ,  H05K2201/10166 ,  H05K2201/10287 ,  H05K2203/0182 ,  H05K2203/0191 ,  H05K2203/1131 ,  H05K2203/1509 ,  H05K2203/1536

Abstract: A method for manufacturing an electronic component by a pressure-assisted low-temperature sintering process, by using a pressure sintering device having an upper die and a lower die is disclosed. The upper the die and/or the lower die is provided with a first pressure pad, wherein the method includes the following steps: placing a first sinterable component on a first sintering layer provided on a top layer of a first substrate; joining the sinterable component and the top layer of the first substrate to form a first electronic component by pressing the upper die and the lower die towards each other, wherein the sintering device is simultaneously heated.

公开(公告)号：US20220157773A1

公开(公告)日：2022-05-19

申请号：US17435752

申请日：2020-02-27

Applicant: DANFOSS SILICON POWER GMBH

Inventor： Martin Becker ,  Dirk Dittmann

IPC: H01L23/00 ,  H05K3/32

Abstract: A method for manufacturing an electronic component by a pressure-assisted low-temperature sintering process, by using a pressure sintering device having an upper die and a lower die is disclosed. The upper the die and/or the lower die is provided with a first pressure pad, wherein the method includes the following steps: placing a first sinterable component on a first sintering layer provided on a top layer of a first substrate; joining the sinterable component and the top layer of the first substrate to form a first electronic component by pressing the upper die and the lower die towards each other, wherein the sintering device is simultaneously heated.