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公开(公告)号：US10032654B2
公开(公告)日：2018-07-24
申请号：US14493908
申请日：2014-09-23
发明人： Sei Negoro , Ryo Muramoto , Toyohide Hayashi , Koji Hashimoto , Yasuhiko Nagai
IPC分类号： H01L21/67 , H01L21/02 , H01L21/306 , H01L21/311 , C23C16/48 , C23C16/46
摘要： A substrate treatment apparatus is used for treating a major surface of a substrate with a chemical liquid. The substrate treatment apparatus includes: a substrate holding unit which holds the substrate; a chemical liquid supplying unit having a chemical liquid nozzle which supplies the chemical liquid onto the major surface of the substrate held by the substrate holding unit; a heater having an infrared lamp to be located in opposed relation to the major surface of the substrate held by the substrate holding unit to heat the chemical liquid supplied onto the major surface of the substrate by irradiation with infrared radiation emitted from the infrared lamp, the heater having a smaller diameter than the substrate; and a heater moving unit which moves the heater along the major surface of the substrate held by the substrate holding unit.
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公开(公告)号：US09555452B2
公开(公告)日：2017-01-31
申请号：US14456007
申请日：2014-08-11
发明人： Sei Negoro , Yasuhiko Nagai , Keiji Iwata
CPC分类号： B08B3/10 , B08B7/00 , B08B7/0035 , B08B7/0064 , B08B7/0071 , H01L21/67028 , H01L21/67103 , H01L21/6715
摘要： A substrate treatment method is provided, which includes a liquid film retaining step of retaining a liquid film of a treatment liquid on a major surface of a substrate, and a heater heating step of locating a heater in opposed relation to the major surface of the substrate to heat the treatment liquid film by the heater in the liquid film retaining step, wherein an output of the heater is changed from a previous output level in the heater heating step.
摘要翻译： 提供一种基板处理方法，其包括将基板的主表面上的处理液的液膜保持的液膜保持工序，以及与基板的主面相对地配置加热器的加热器加热工序 在液膜保持步骤中通过加热器加热处理液膜，其中在加热器加热步骤中加热器的输出从先前的输出水平改变。
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公开(公告)号：US09403187B2
公开(公告)日：2016-08-02
申请号：US14475015
申请日：2014-09-02
发明人： Sei Negoro , Ryo Muramoto , Yasuhiko Nagai , Tsutomu Osuka , Keiji Iwata
CPC分类号： B05D3/105 , B05D1/36 , H01L21/67028 , H01L21/67051
摘要： A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off the liquid remaining on the substrate, a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate, and a temperature decrease suppressing step of supplying, in parallel to the hydrogen peroxide water supplying step, pure water having high temperature to a lower surface of the substrate.
摘要翻译： 基板处理方法包括：向基板的上表面供给具有高温的SPM的SPM供给工序; DIW供给工序，在SPM供给工序后，将具有室温的DIW供给到所述基板的上表面，进行冲洗 剩余在基板上的液体，过氧化氢水供给步骤，在SPM供给工序之后和DIW供给工序之前，将液温低于SPM的温度以上且不低于室温的过氧化氢水供给到 在SPM保持在基板上的状态下的基板的上表面以及与过氧化氢水供给工序并行地向基板的下表面供给具有高温的纯水的降温抑制工序。
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公开(公告)号：US09340761B2
公开(公告)日：2016-05-17
申请号：US14475069
申请日：2014-09-02
发明人： Sei Negoro , Ryo Muramoto , Yasuhiko Nagai , Tsutomu Osuka , Keiji Iwata
IPC分类号： B44C1/22 , C23F1/00 , C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461 , C11D11/00 , H01L21/67 , C11D3/00
CPC分类号： B08B3/08 , B08B3/02 , B08B3/10 , C11D3/0052 , C11D11/0047 , C11D11/0064 , C11D11/007 , H01L21/67028 , H01L21/67051
摘要： A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate.
摘要翻译： 基板处理方法包括：向基板的上表面供给具有高温的SPM的SPM供给工序; DIW供给工序，在SPM供给工序后，将具有室温的DIW供给到所述基板的上表面，进行冲洗 剩余在基板上的液体，以及过氧化氢水供给步骤，在SPM供给工序后和DIW供给工序之前，供给液温低于SPM的温度以上且不低于室温的过氧化氢水， 在SPM保持在基板上的状态下到基板的上表面。
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公开(公告)号：US08877076B2
公开(公告)日：2014-11-04
申请号：US13777128
申请日：2013-02-26
发明人： Sei Negoro , Ryo Muramoto , Toyohide Hayashi , Koji Hashimoto , Yasuhiko Nagai
IPC分类号： B44C1/22 , H01L21/311 , H01L21/02 , H01L21/306 , H01L21/67
CPC分类号： H01L21/67023 , C23C16/46 , C23C16/48 , C23C16/481 , C23C16/482 , H01L21/0206 , H01L21/02282 , H01L21/30604 , H01L21/31111 , H01L21/6708
摘要： A substrate treatment apparatus is used for treating a major surface of a substrate with a chemical liquid. The substrate treatment apparatus includes: a substrate holding unit which holds the substrate; a chemical liquid supplying unit having a chemical liquid nozzle which supplies the chemical liquid onto the major surface of the substrate held by the substrate holding unit; a heater having an infrared lamp to be located in opposed relation to the major surface of the substrate held by the substrate holding unit to heat the chemical liquid supplied onto the major surface of the substrate by irradiation with infrared radiation emitted from the infrared lamp, the heater having a smaller diameter than the substrate; and a heater moving unit which moves the heater along the major surface of the substrate held by the substrate holding unit.
摘要翻译： 基板处理装置用于用化学液体处理基板的主表面。 基板处理装置包括：保持基板的基板保持单元; 化学液体供给单元，其具有将所述化学液体供给到由所述基板保持单元保持的所述基板的主表面上的化学液体喷嘴; 具有红外灯的加热器，所述加热器具有与由所述基板保持单元保持的所述基板的主表面相对的关系，以通过从所述红外灯发射的红外线照射来加热供应到所述基板的主表面上的所述化学液体， 加热器的直径比基板小; 以及加热器移动单元，其沿着由基板保持单元保持的基板的主表面移动加热器。
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