Abstract:
The use of ion implantation to produce low concentrations of chromium, oxygen or iron in a gallium arsenide junction type semiconductor, utilizing the accompanying low resistivity to provide an improved device.
Abstract:
A solid state sensing retina for infrared vidicon television camera tubes using a low voltage electron beam, consisting of a monolithic silicon wafer having an n-type substrate and two dimensional array of p-type islands, each island has a Schottky electrode photoemitter and substrate contact buss, an ohmic contact pad allows charging of the p-type region beneath the Schottky electrode.
Abstract:
A Schottky barrier device having a completely submersed Schottky barrier junction to enhance the collection efficiency of photogenerated carriers. A method is also disclosed for manufacturing the device.
Abstract:
A radiation transparent base having a number of coincentric Fresnel rings mounted on one face, and one-quarter wavelength in thickness and a reflective coating covering the face and rings and a detector mounted on the opposite face to collect reflected in phase radiation.