公开(公告)号：US20210104978A1

公开(公告)日：2021-04-08

申请号：US16590465

申请日：2019-10-02

申请人： Cree, Inc.

发明人： QIANLI MU ,  Zulhazmi Mokhti ,  Jia Guo ,  Scott Sheppard

IPC分类号： H03F1/30 ,  H01L29/20 ,  H01L29/778 ,  H03F3/193

摘要： Gallium nitride based RF transistor amplifiers include a semiconductor structure having a gallium nitride based channel layer and a gallium nitride based barrier layer thereon, and are configured to operate at a specific direct current drain-to-source bias voltage. These amplifiers are configured to have a normalized drain-to-gate capacitance at the direct current drain-to-source bias voltage, and to have a second normalized drain-to-gate capacitance at two-thirds the direct current drain-to-source bias voltage, where the second normalized drain-to-gate capacitance is less than twice the first normalized drain-to-gate capacitance.

公开(公告)号：US10784825B2

公开(公告)日：2020-09-22

申请号：US16516667

申请日：2019-07-19

申请人： Cree, Inc.

发明人： Haedong Jang ,  Timothy Canning ,  Bjoern Herrmann ,  Zulhazmi Mokhti ,  Frank Trang ,  Richard Wilson

IPC分类号： H03F3/189 ,  H03F3/24 ,  H03H7/01 ,  H03H7/38 ,  H03F3/193 ,  H03F1/02 ,  H03F1/56

摘要： An amplifier circuit includes an input port, an output port, and a reference potential port, an RF amplifier device having an input terminal electrically coupled to the input port, an output terminal electrically coupled to the output port, and a reference potential terminal electrically coupled to the reference potential port. An impedance matching network is electrically connected to the output terminal, the reference potential port, and the output port. The impedance matching network includes a reactive efficiency optimization circuit that forms a parallel resonant circuit with a characteristic output impedance of the peaking amplifier at a center frequency of the fundamental frequency range. The impedance matching network includes a reactive frequency selective circuit that negates a phase shift of the RF signal in phase at the center frequency and exhibits a linear transfer characteristic in a baseband frequency range.

公开(公告)号：US20200020779A1

公开(公告)日：2020-01-16

申请号：US16375398

申请日：2019-04-04

申请人： Cree, Inc.

发明人： Frank Trang ,  Zulhazmi Mokhti ,  Haedong Jang

IPC分类号： H01L29/423 ,  H01L23/528 ,  H01L23/522 ,  H01L29/417 ,  H01L29/08 ,  H01L29/06

摘要： Pursuant to some embodiments of the present invention, transistor devices are provided that include a semiconductor structure, a gate finger extending on the semiconductor structure in a first direction, and a gate interconnect extending in the first direction and configured to be coupled to a gate signal at an interior position of the gate interconnect, where the gate interconnect is connected to the gate finger at a position offset from the interior position of the gate interconnect.

公开(公告)号：US20210351141A1

公开(公告)日：2021-11-11

申请号：US17379420

申请日：2021-07-19

申请人： Cree, Inc.

发明人： Frank Trang ,  Qianli Mu ,  Haedong Jang ,  Zulhazmi Mokhti

IPC分类号： H01L23/66 ,  H01L23/00 ,  H01L29/423 ,  H01L23/482

摘要： A multi-cell transistor includes a semiconductor structure, a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction, and an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and that extends above the semiconductor structure.

公开(公告)号：US20200027850A1

公开(公告)日：2020-01-23

申请号：US16208940

申请日：2018-12-04

申请人： Cree, Inc.

发明人： Frank Trang ,  Qianli Mu ,  Haedong Jang ,  Zulhazmi Mokhti

IPC分类号： H01L23/66 ,  H01L23/00 ,  H01L29/423 ,  H01L23/482

摘要： A multi-cell transistor includes a semiconductor structure, a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction, and an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and that extends above the semiconductor structure.

公开(公告)号：US20220302272A1

公开(公告)日：2022-09-22

申请号：US17834395

申请日：2022-06-07

申请人： Cree, Inc.

发明人： Frank Trang ,  Zulhazmi Mokhti ,  Haedong Jang

IPC分类号： H01L29/423 ,  H01L23/528 ,  H01L23/522 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06

摘要： Pursuant to some embodiments of the present invention, transistor devices are provided that include a semiconductor structure, a drain finger extending on the semiconductor structure in a first direction, and a drain interconnect extending in the first direction and configured to be coupled to a drain signal at an interior position of the drain interconnect, where the drain interconnect is connected to the drain finger at a position offset from the interior position of the drain interconnect.

公开(公告)号：US10855244B2

公开(公告)日：2020-12-01

申请号：US16165846

申请日：2018-10-19

申请人： Cree, Inc.

发明人： Frank Trang ,  Zulhazmi Mokhti ,  Guillaume Bigny

IPC分类号： H03H7/01 ,  H01L23/522 ,  H01L23/66

摘要： A transistor device includes a transistor cell comprising a channel region, a gate runner that is electrically connected to a gate electrode on the channel region and physically separated from the gate electrode, and a harmonic termination circuit electrically connected to the gate runner between the gate electrode and an input terminal of the transistor device, the harmonic termination circuit configured to terminate signals at a harmonic frequency of a fundamental operating frequency of the transistor device.

公开(公告)号：US20200219831A1

公开(公告)日：2020-07-09

申请号：US16823659

申请日：2020-03-19

申请人： Cree, Inc.

发明人： Frank Trang ,  Qianli Mu ,  Haedong Jang ,  Zulhazmi Mokhti

IPC分类号： H01L23/66 ,  H01L23/482 ,  H01L23/00 ,  H01L29/423

摘要： A multi-cell transistor includes a semiconductor structure, a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction, and an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and that extends above the semiconductor structure.

公开(公告)号：US20200044024A1

公开(公告)日：2020-02-06

申请号：US16596240

申请日：2019-10-08

申请人： Cree, Inc.

发明人： Zulhazmi Mokhti ,  Frank Trang ,  Haedong Jang

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L23/528 ,  H01L29/417 ,  H03F3/195

摘要： A transistor device includes a semiconductor structure, a plurality of gate fingers extending on the semiconductor structure in a first direction, a plurality of gate interconnects that each have a first end and a second end extending on the semiconductor structure in the first direction, wherein each gate interconnect is connected to a respective gate finger by a plurality of first conductive vias, and a plurality of gate runners extending on the semiconductor structure in the first direction. At least one gate interconnect of the gate interconnects is connected to one of the gate runners by a second conductive via at an interior position of the at least one gate interconnect that is remote from the first end and the second end of the at least one gate interconnect.

公开(公告)号：US11069635B2

公开(公告)日：2021-07-20

申请号：US16823659

申请日：2020-03-19

申请人： Cree, Inc.

发明人： Frank Trang ,  Qianli Mu ,  Haedong Jang ,  Zulhazmi Mokhti

IPC分类号： H01L23/66 ,  H01L23/00 ,  H01L29/423 ,  H01L23/482

摘要： A multi-cell transistor includes a semiconductor structure, a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction, and an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and that extends above the semiconductor structure.