公开(公告)号：US20210104978A1

公开(公告)日：2021-04-08

申请号：US16590465

申请日：2019-10-02

申请人： Cree, Inc.

发明人： QIANLI MU ,  Zulhazmi Mokhti ,  Jia Guo ,  Scott Sheppard

IPC分类号： H03F1/30 ,  H01L29/20 ,  H01L29/778 ,  H03F3/193

摘要： Gallium nitride based RF transistor amplifiers include a semiconductor structure having a gallium nitride based channel layer and a gallium nitride based barrier layer thereon, and are configured to operate at a specific direct current drain-to-source bias voltage. These amplifiers are configured to have a normalized drain-to-gate capacitance at the direct current drain-to-source bias voltage, and to have a second normalized drain-to-gate capacitance at two-thirds the direct current drain-to-source bias voltage, where the second normalized drain-to-gate capacitance is less than twice the first normalized drain-to-gate capacitance.