Phase shifters having a tunable dielectric layer and a resistive ink layer and method of manufacture therefore
    1.
    发明授权
    Phase shifters having a tunable dielectric layer and a resistive ink layer and method of manufacture therefore 有权
    具有可调电介质层和电阻墨层的移相器及其制造方法

    公开(公告)号:US07477116B2

    公开(公告)日:2009-01-13

    申请号:US11698547

    申请日:2007-01-27

    CPC classification number: H01P1/181 H01P11/00

    Abstract: An embodiment of the present invention provides a phase shifter, comprising a substrate, resistive ink adjacent one surface of said substrate and separating a voltage tunable dielectric material from said surface of said substrate and a plurality of conductors adjacent said voltage tunable dielectric material separated so as to form a gap filled with resistive ink in said gap.

    Abstract translation: 本发明的一个实施例提供了一种移相器,包括基板,邻近所述基板的一个表面的电阻墨水,并从所述基板的所述表面分离电压可调电介质材料,以及与所述电压可调电介质材料相邻的多个导体, 以在所述间隙中形成填充有电阻墨水的间隙。

    Varactors and methods of manufacture and use
    5.
    发明授权
    Varactors and methods of manufacture and use 有权
    变形金刚和制造和使用的方法

    公开(公告)号:US07807477B2

    公开(公告)日:2010-10-05

    申请号:US12012901

    申请日:2008-02-06

    CPC classification number: H01L29/93 H01L27/0808

    Abstract: In an embodiment of the present invention is provided a method of manufacturing a varactor, comprising providing a substrate; positioning a bottom electrode on a surface of the substrate; placing a tunable dielectric material adjacent to and extending over the bottom electrode forming a step and in contact with a top electrode; placing an interconnect layer in contact with the bottom electrode, the tunable dielectric and the top electrode.

    Abstract translation: 在本发明的一个实施例中,提供一种制造变容二极管的方法,包括提供衬底; 将底部电极定位在所述基板的表面上; 将可调电介质材料放置在底电极附近并延伸到底电极上,形成台阶并与顶电极接触; 将互连层放置成与底部电极,可调电介质和顶部电极接触。

    Varactors including interconnect layers
    7.
    发明申请
    Varactors including interconnect layers 有权
    变压器包括互连层

    公开(公告)号:US20080297973A1

    公开(公告)日:2008-12-04

    申请号:US12217239

    申请日:2008-07-02

    CPC classification number: H01L29/93 H01L27/0808

    Abstract: In an embodiment of the present invention is provided a varactor comprising a substrate, a bottom electrode positioned on a surface of the substrate, a tunable dielectric material positioned adjacent to and extending over the bottom electrode forming a step and in contact with a top electrode, and an interconnect layer in contact with the bottom electrode, the tunable dielectric and the top electrode.

    Abstract translation: 在本发明的一个实施例中提供了一种变容二极管,其包括基底,位于基底表面的底部电极,位于邻近并延伸到底部电极上并在其上延伸的可调电介质材料,形成台阶并与顶部电极接触, 以及与底部电极,可调谐电介质和顶部电极接触的互连层。

    Microstrip tunable filters tuned by dielectric varactors
    9.
    发明授权
    Microstrip tunable filters tuned by dielectric varactors 有权
    由介质变容二极管调谐的微带可调谐滤波器

    公开(公告)号:US06525630B1

    公开(公告)日:2003-02-25

    申请号:US09704850

    申请日:2000-11-02

    CPC classification number: H01P1/20336

    Abstract: An electronic filter includes a substrate, a ground conductor, an input, an output, a first microstrip line positioned on the substrate and electrically coupled to the input and the output, and a first tunable dielectric varactor electrically connected between the microstrip line and the ground conductor. The input preferably includes a second microstrip line positioned on the substrate and including a portion lying parallel to the first microstrip line. The output preferable includes a third microstrip line positioned on the substrate and including a portion lying parallel to the first microstrip line. The first microstrip line includes a first end and a second end, the first end being open circuited and the varactor being connected between the second end and the ground conductor. The filter further includes a bias voltage circuit including a high impedance line, a radial stub extending from the high impedance line, and a patch connected to the high impedance line for connection to a DC source. In a multiple pole embodiment, the filter further includes additional microstrip lines positioned on the filter substrate parallel to the first microstrip line and additional tunable dielectric varactors electrically connected between the additional microstrip lines and the ground conductor.

    Abstract translation: 电子滤波器包括基板,接地导体,输入端,输出端,位于基板上并电耦合到输入端和输出端的第一微带线,以及电连接在微带线与地之间的第一可调介质变容二极管 导体。 输入优选地包括位于基板上并包括平行于第一微带线的部分的第二微带线。 输出优选包括位于基板上并包括平行于第一微带线的部分的第三微带线。 第一微带线包括第一端和第二端,第一端开路并且变容二极管连接在第二端和接地导体之间。 滤波器还包括偏置电压电路,该偏置电压电路包括高阻抗线路,从高阻抗线路延伸的径向短截线以及连接到用于连接到DC源极的高阻抗线路的贴片。 在多极实施例中,滤波器还包括平行于第一微带线布置在滤波器衬底上的附加微带线和电连接在附加微带线和接地导体之间的附加可调电介质变容二极管。

    Ceramic ferrite/ferroelectric composite material
    10.
    发明授权
    Ceramic ferrite/ferroelectric composite material 有权
    陶瓷铁氧体/铁电复合材料

    公开(公告)号:US6063719A

    公开(公告)日:2000-05-16

    申请号:US144982

    申请日:1998-09-01

    CPC classification number: H01F1/0315 C04B35/2683

    Abstract: A novel ceramic ferrite/ferroelectric composite material having a low dissipation factor, voltage tunability, and proper impedance matching for the incident medium. The material comprises ferrites doped with the ferroelectric Barium Strontium Titanate (BSTO) or ferrites doped with the ferroelectric Barium Strontium Titanate (BSTO)/MgO. Preferred composites are magnesium ferrites doped with BSTO and magnesium ferrites doped with BSTO/MgO. Most particularly, the inventive composites are comprised of magnesium ferrites doped with Ba.sub.1-x Sr.sub.x TiO.sub.3 and magnesium ferrites doped with Ba.sub.1-x Sr.sub.x TiO.sub.3 /MgO, wherein x is greater than 0.00, but less than or equal to 0.75, and wherein the percent weight ratio of magnesium ferrite to BSTO or BSTO/MgO is 60 to 95 percent ferrite to 40 to 5 percent BSTO or 60 to 95 percent ferrite to 40 to 5 percent BSTO/MgO ferroelectric. A particularly well suited composite, i.e., one having a .mu./.di-elect cons. ratio close to unity, comprises 80 weight percent magnesium ferrite and 20 weight percent BSTO/MgO, wherein said BSTO/MgO comprises 80 weight percent Ba.sub.0.6 Sr.sub.0.4 TiO.sub.3 combined with 20 weight percent MgO.

    Abstract translation: 一种新颖的陶瓷铁氧体/铁电复合材料,具有低的损耗因子,电压可调性和对入射介质的适当阻抗匹配。 该材料包括掺杂有铁电的钛酸钡锶(BSTO)的铁氧体或掺有铁电的锶钡(BSTO)/ MgO的铁氧体。 优选的复合材料是掺杂有BSTO的镁铁氧体和掺杂有BSTO / MgO的镁铁氧体。 最具体地,本发明的复合材料包括掺杂有Ba1-xSrxTiO3的镁铁氧体和掺杂有Ba1-xSrxTiO3 / MgO的镁铁氧体,其中x大于0.00,但小于或等于0.75,并且其中镁的百分比重量比 BSTO或BSTO / MgO的铁素体为铁素体为60〜95%,BSTO为40〜5%,铁素体为60〜95%,BSTO / MgO铁电体为40〜5%。 一种特别适合的复合材料,即一种接近一致的μ/ + 531比率的复合材料,包含80重量%的铁素体和20重量%的BSTO / MgO,其中所述BSTO / MgO包括80重量百分比的Ba0.6Sr0.4TiO3与 20重量%MgO。

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