OPTICAL POWER SPLITTER
    1.
    发明申请
    OPTICAL POWER SPLITTER 审中-公开
    光功率分配器

    公开(公告)号:US20150104130A1

    公开(公告)日:2015-04-16

    申请号:US14053135

    申请日:2013-10-14

    IPC分类号: G02B6/26

    摘要: Embodiments of the present disclosure include devices that split a light beam into two separate paths, with reduced sensitivity to fabrication variation. The devices can operate as 3-dB splitters that divide the input optical energy equally between two output waveguides. Similarly, the devices can also function to combine two light beams into a single path (coupler). The designs make use of adiabatic modal evolution and do not require physical symmetry along the entire device length.

    摘要翻译: 本公开的实施例包括将光束分成两个单独的路径,对制造变化的灵敏度降低的装置。 器件可以作为3-dB分离器工作,将输入光能平均分配在两个输出波导之间。 类似地,这些装置也可以用于将两个光束组合成单个路径(耦合器)。 设计使用绝热模态演化,并且不需要沿整个设备长度进行物理对称。

    Photonic integration platform
    3.
    发明授权

    公开(公告)号:US11156783B2

    公开(公告)日:2021-10-26

    申请号:US16690574

    申请日:2019-11-21

    摘要: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

    Photonic integration platform
    5.
    发明授权

    公开(公告)号:US10509174B2

    公开(公告)日:2019-12-17

    申请号:US16052524

    申请日:2018-08-01

    摘要: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

    Multilayer photonic adapter
    8.
    发明授权

    公开(公告)号:US09618699B2

    公开(公告)日:2017-04-11

    申请号:US14658220

    申请日:2015-03-15

    摘要: Embodiments herein describe disposing a waveguide adapter onto an SOI device after the components on a silicon surface layer have been formed. That is, the waveguide adapter is disposed above optical components (e.g., optical modulators, detectors, waveguides, etc) formed in a surface layer. In one embodiment, a waveguide in a bottom layer of the waveguide adapter overlaps a silicon waveguide in the surface layer such that the silicon waveguide and the waveguide in the bottom layer are optically coupled. The waveguide adapter also includes other layers above the bottom layer (e.g., middle and top layers) that also contain waveguides which form an adiabatic optical system for transmitting an optical signal. At least one of the waveguides in the multi-layer adapter is exposed at an optical interface of the SOI device, thereby permitting the SOI device to transmit optical signals to, or receive optical signals from, an external optical component.

    Photonic integration platform
    9.
    发明授权
    Photonic integration platform 有权
    光子集成平台

    公开(公告)号:US09274275B2

    公开(公告)日:2016-03-01

    申请号:US13935277

    申请日:2013-07-03

    摘要: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

    摘要翻译: SOI器件可以包括在外部光源(例如,光纤电缆或激光器)与SOI器件的硅表面层上的硅波导之间耦合光的波导适配器。 在一个实施例中,波导适配器被嵌入到绝缘体层中。 这样做可以使得在将表面层组分添加到SOI器件之前形成波导适配器。 因此,可以使用使用高温的制造技术,而不会损害SOI器件中的其它部件 - 例如,在将热敏部件添加到硅表面层之前形成波导适配器。

    Dual tip optical coupler
    10.
    发明授权
    Dual tip optical coupler 有权
    双头光耦合器

    公开(公告)号:US09164235B1

    公开(公告)日:2015-10-20

    申请号:US14322661

    申请日:2014-07-02

    摘要: Embodiments disclosed herein generally relate to optical couplers for transmitting an optical signal between a waveguide in an optical device to an external light-carrying medium and vice versa. The couplers include first and second portions that extend away from the waveguide towards an optical interface that faces the light-carrying medium. The first portion is attached to the waveguide, while the second portion is not. In one example, a first end of the first portion is attached to the waveguide, while a second end, opposite the first end, faces the optical interface. The first portion may taper as it extends from the first end to the second. The second portion of the coupler may be physically separated from both the first portion and the waveguide. However, in one embodiment, the first and second portions extend in the same direction towards the optical interface.

    摘要翻译: 本文公开的实施例通常涉及用于在光学装置中的波导与外部光载体之间传输光信号的光耦合器,反之亦然。 耦合器包括从波导向面向光载体的光学接口延伸的第一和第二部分。 第一部分附接到波导,而第二部分不是。 在一个示例中,第一部分的第一端附接到波导,而与第一端相对的第二端面向光学界面。 当第一部分从第一端延伸到第二端时,第一部分可以逐渐变细。 耦合器的第二部分可以与第一部分和波导两者物理分离。 然而,在一个实施例中,第一和第二部分沿相同的方向朝向光学接口延伸。