公开(公告)号：US08124454B1

公开(公告)日：2012-02-28

申请号：US11548629

申请日：2006-10-11

申请人： Chen-Fu Chu ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

发明人： Chen-Fu Chu ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/32341

摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：US08319252B2

公开(公告)日：2012-11-27

申请号：US12690828

申请日：2010-01-20

申请人： Wen-Huang Liu ,  Trung Tri Doan ,  Chuong Anh Tran

发明人： Wen-Huang Liu ,  Trung Tri Doan ,  Chuong Anh Tran

IPC分类号： H05B41/16

CPC分类号： H01L25/0753 ,  H01L33/44 ,  H01L33/50 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A light emitting device comprises two light-emitting diode (LED) groups, a group of luminophor layers, and an input terminal. The first LED group includes at least one blue LED emitting light having a dominant wavelength in a range between 400 nm and 480 nm, and the second LED group includes at least one red-orange LED emitting light having a dominant wavelength in a range between 610 nm and 630 nm. The group of luminophor layers, which are selected from one of silicates, nitrides, and nitrogen oxides, are positioned above the first LED group and partially converts the light emitted by the first LED group into light having a dominant wavelength in a range between 500 nm and 555 nm. The input terminal is connected to the two LED groups for providing desired electric energy thereto.

摘要翻译： 发光器件包括两个发光二极管（LED）组，一组发光体层和一个输入端子。 第一LED组包括至少一个主要波长在400nm和480nm之间的蓝色LED发光，并且第二LED组包括至少一个红色 - 橙色LED发光，其主波长在610 nm和630nm。 选自硅酸盐，氮化物和氮氧化物之一的发光体层组位于第一LED组上方，并且将由第一LED组发射的光部分地转换成具有主波长的光在500nm 和555nm。 输入端子连接到两个LED组，用于向其提供所需的电能。

公开(公告)号：US07892891B2

公开(公告)日：2011-02-22

申请号：US11548647

申请日：2006-10-11

申请人： Chen-Fu Chu ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

发明人： Chen-Fu Chu ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

摘要： Techniques for dicing wafer assemblies containing multiple metal device dies, such as vertical light-emitting diode (VLED), power device, laser diode, and vertical cavity surface emitting laser device dies, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, such techniques are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 提供了用于切割包含多个金属器件管芯（例如垂直发光二极管（VLED）），功率器件，激光二极管和垂直腔表面发射激光器件管芯的晶片组件的技术。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，在具有原始非（或低）导热和/或非（或低）导电载体的金属器件的高散热率的情况下，这种技术可应用于GaN基电子器件 已被去除的底物。

公开(公告)号：US07723718B1

公开(公告)日：2010-05-25

申请号：US11548614

申请日：2006-10-11

申请人： Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

发明人： Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/32341

摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：US07687322B1

公开(公告)日：2010-03-30

申请号：US11548637

申请日：2006-10-11

申请人： Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

发明人： Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

IPC分类号： H01L21/20

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/32341

摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：US20090014743A1

公开(公告)日：2009-01-15

申请号：US12173662

申请日：2008-07-15

申请人： CHUONG Anh TRAN ,  Trung Tri Doan

发明人： CHUONG Anh TRAN ,  Trung Tri Doan

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/42

摘要： Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.

摘要翻译： 公开了用于形成在n掺杂层和p掺杂层之间具有有源层的垂直半导体发光二极管（VLED）器件的方法; 以及将多个球固定在VLED装置的n掺杂层的表面上。

公开(公告)号：US07413918B2

公开(公告)日：2008-08-19

申请号：US11032881

申请日：2005-01-11

申请人： Chuong Anh Tran ,  Trung Tri Doan

发明人： Chuong Anh Tran ,  Trung Tri Doan

IPC分类号： H01L21/20

CPC分类号： H01L33/22 ,  H01L33/42

摘要： Methods are disclosed for forming a vertical semiconductor light emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.

摘要翻译： 公开了用于形成在n掺杂层和p掺杂层之间具有有源层的垂直半导体发光二极管（VLED）器件的方法; 以及将多个球固定在VLED装置的n掺杂层的表面上。

公开(公告)号：US07378288B2

公开(公告)日：2008-05-27

申请号：US11032854

申请日：2005-01-11

申请人： Chuong Anh Tran ,  Trung Tri Doan

发明人： Chuong Anh Tran ,  Trung Tri Doan

IPC分类号： H01L21/00

CPC分类号： B23K26/40 ,  H01L33/0095

摘要： Systems and methods are disclosed for producing vertical LED array on a metal substrate; evaluating said array of LEDs for defects; destroying one or more defective LEDs; forming good LEDs only LED array suitable for wafer level package.

摘要翻译： 公开了用于在金属基板上产生垂直LED阵列的系统和方法; 评估所述LED阵列的缺陷; 破坏一个或多个有缺陷的LED; 仅形成适合晶圆级封装的LED阵列。

公开(公告)号：US08552451B2

公开(公告)日：2013-10-08

申请号：US13195742

申请日：2011-08-01

申请人： Chuong Anh Tran ,  Trung Tri Doan

发明人： Chuong Anh Tran ,  Trung Tri Doan

IPC分类号： H01L33/22

CPC分类号： H01L33/22 ,  H01L33/42

摘要： Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.

摘要翻译： 公开了用于形成在n掺杂层和p掺杂层之间具有有源层的垂直半导体发光二极管（VLED）器件的方法; 以及将多个球固定在VLED装置的n掺杂层的表面上。

公开(公告)号：US20110284867A1

公开(公告)日：2011-11-24

申请号：US13195742

申请日：2011-08-01

申请人： Chuong Anh Tran ,  Trung Tri Doan

发明人： Chuong Anh Tran ,  Trung Tri Doan

IPC分类号： H01L33/58 ,  H01L33/42

CPC分类号： H01L33/22 ,  H01L33/42

摘要： Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.

摘要翻译： 公开了用于形成在n掺杂层和p掺杂层之间具有有源层的垂直半导体发光二极管（VLED）器件的方法; 以及将多个球固定在VLED装置的n掺杂层的表面上。