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    Non-volatile memory device with high speed operation and lower power consumption
    3.
    发明授权
    Non-volatile memory device with high speed operation and lower power consumption 有权
    具有高速运行，功耗低的非易失性存储器件

    公开(公告)号：US08729615B2

    公开(公告)日：2014-05-20

    申请号：US13248333

    申请日：2011-09-29

    Applicant: Chang Hyun Lee ,  Young-Woo Park ,  Kye-Hyun Kyung ,  Cheon-An Lee ,  Sung-il Chang ,  Chul Bum Kim

    Inventor： Chang Hyun Lee ,  Young-Woo Park ,  Kye-Hyun Kyung ,  Cheon-An Lee ,  Sung-il Chang ,  Chul Bum Kim

    IPC: H01L27/108

    CPC classification number: H01L21/823857 ,  G11C16/0483 ,  G11C16/30 ,  H01L27/105 ,  H01L27/11546 ,  H01L27/11556

    Abstract: A semiconductor memory device has a memory cell region and a peripheral region. The device includes low voltage transistors at the peripheral region having gate insulation films with different thicknesses. For example, a gate insulation film of a low voltage transistor used in an input/output circuit of the memory device may be thinner than the gate insulation film of a low voltage transistor used in a core circuit for the memory device. Since low voltage transistors used at an input/output circuit are formed to be different from low voltage transistors used at a core circuit or a high voltage pump circuit, high speed operation and low power consumption characteristics of a non-volatile memory device may be.

    Abstract translation: 半导体存储器件具有存储单元区域和周边区域。 该器件包括具有不同厚度的栅极绝缘膜的外围区域的低电压晶体管。 例如，在存储器件的输入/输出电路中使用的低电压晶体管的栅极绝缘膜可以比用于存储器件的核心电路中的低电压晶体管的栅极绝缘膜更薄。 由于在输入/输出电路中使用的低压晶体管形成为与核心电路或高压泵浦电路所使用的低压晶体管不同，所以可以是非易失性存储器件的高速工作和低功耗特性。

    NON-VOLATILE MEMORY DEVICE WITH HIGH SPEED OPERATION AND LOWER POWER CONSUMPTION
    4.
    发明申请
    NON-VOLATILE MEMORY DEVICE WITH HIGH SPEED OPERATION AND LOWER POWER CONSUMPTION 有权
    具有高速运行和低功耗的非易失性存储器件

    公开(公告)号：US20120146118A1

    公开(公告)日：2012-06-14

    申请号：US13248333

    申请日：2011-09-29

    Applicant: Chang-Hyun Lee ,  Young-Woo Park ,  Kye-Hyun Kyung ,  Cheon-An Lee ,  Sung-il Chang ,  Chul Bum Kim

    Inventor： Chang-Hyun Lee ,  Young-Woo Park ,  Kye-Hyun Kyung ,  Cheon-An Lee ,  Sung-il Chang ,  Chul Bum Kim

    IPC: H01L27/108 ,  H01L27/092

    CPC classification number: H01L21/823857 ,  G11C16/0483 ,  G11C16/30 ,  H01L27/105 ,  H01L27/11546 ,  H01L27/11556

    Abstract: A semiconductor memory device has a memory cell region and a peripheral region. The device includes low voltage transistors at the peripheral region having gate insulation films with different thicknesses. For example, a gate insulation film of a low voltage transistor used in an input/output circuit of the memory device may be thinner than the gate insulation film of a low voltage transistor used in a core circuit for the memory device. Since low voltage transistors used at an input/output circuit are formed to be different from low voltage transistors used at a core circuit or a high voltage pump circuit, high speed operation and low power consumption characteristics of a non-volatile memory device may be.

    Abstract translation: 半导体存储器件具有存储单元区域和周边区域。 该器件包括具有不同厚度的栅极绝缘膜的外围区域的低电压晶体管。 例如，在存储器件的输入/输出电路中使用的低电压晶体管的栅极绝缘膜可以比用于存储器件的核心电路中的低电压晶体管的栅极绝缘膜更薄。 由于在输入/输出电路中使用的低压晶体管形成为与核心电路或高压泵浦电路所使用的低压晶体管不同，所以可以是非易失性存储器件的高速工作和低功耗特性。

    Data storage device and operation method thereof
    5.
    发明授权
    Data storage device and operation method thereof 有权
    数据存储装置及其操作方法

    公开(公告)号：US09406386B2

    公开(公告)日：2016-08-02

    申请号：US14797203

    申请日：2015-07-13

    Applicant: Jae-Duk Yu ,  Chul Bum Kim ,  Dongku Kang

    Inventor： Jae-Duk Yu ,  Chul Bum Kim ,  Dongku Kang

    IPC: G11C16/10 ,  G11C16/26 ,  G11C16/08 ,  G11C16/04

    CPC classification number: G11C16/10 ,  G11C8/12 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3418 ,  G11C2211/5648

    Abstract: A data storage device includes a nonvolatile memory having a plurality of first memory cells connected to a first word line and a plurality of second memory cells connected to a second word line. A memory controller divides first data to be programmed in the first memory cells into first and second data groups and divides second data to be programmed in the second memory cells into third and fourth data groups. The nonvolatile memory device performs a third program operation of the second data group and a fourth program operation of the fourth data group after sequentially performing a first program operation of the first data group and a second program operation of the third data group.

    Abstract translation: 数据存储装置包括具有连接到第一字线的多个第一存储器单元和连接到第二字线的多个第二存储器单元的非易失性存储器。 存储器控制器将要在第一存储器单元中编程的第一数据划分成第一和第二数据组，并将要在第二存储器单元中编程的第二数据划分成第三和第四数据组。 在顺序执行第一数据组的第一编程操作和第三数据组的第二编程操作之后，非易失性存储器件执行第二数据组的第三程序操作和第四数据组的第四编程操作。

    Data transmitting and receiving apparatus and method, and solid state drive including the same
    6.
    发明授权
    Data transmitting and receiving apparatus and method, and solid state drive including the same 有权
    数据发送和接收装置和方法，以及包括它的固态驱动器

    公开(公告)号：US08983379B2

    公开(公告)日：2015-03-17

    申请号：US13604753

    申请日：2012-09-06

    Applicant: Chul Bum Kim ,  Jangwoo Lee ,  Changsik Yoo ,  Minki Jeon

    Inventor： Chul Bum Kim ,  Jangwoo Lee ,  Changsik Yoo ,  Minki Jeon

    IPC: H04B5/00 ,  H04B1/10

    CPC classification number: H04B5/0031 ,  H04B5/0081

    Abstract: A data transmitting and receiving apparatus includes a coil configured to transmit and receive data through inductive coupling, where a voltage drop across the coil constitutes a sensing signal. The apparatus further includes an input unit configured to generate transmission data and a replica signal in accordance with an input data signal, the transmission data being supplied to the coil. The apparatus still further includes a replica unit configured to generate a compensation signal in accordance with the replica signal, and an output unit configured to extract reception data from the sensing signal using the compensation signal.

    Abstract translation: 数据发送和接收装置包括被配置为通过电感耦合发送和接收数据的线圈，其中线圈两端的电压降构成感测信号。 该装置还包括：输入单元，被配置为根据输入数据信号产生发送数据和复制信号，所述发送数据被提供给线圈。 该装置还包括复制单元，被配置为根据复制信号生成补偿信号，以及输出单元，被配置为使用补偿信号从感测信号中提取接收数据。

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