知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

65 records (took 0.025 seconds)

    LIGHT EMITTING DIODE DEVICE
    3.
    发明申请
    LIGHT EMITTING DIODE DEVICE 有权
    发光二极管装置

    公开(公告)号：US20110114966A1

    公开(公告)日：2011-05-19

    申请号：US12939142

    申请日：2010-11-03

    Applicant: Wen-Huang Liu ,  Li-Wei Shan ,  Chen-Fu Chu

    Inventor： Wen-Huang Liu ,  Li-Wei Shan ,  Chen-Fu Chu

    IPC: H01L33/32 ,  H01L33/60

    CPC classification number: H01L33/60 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405

    Abstract: A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.

    Abstract translation: 具有向外定位的金属电极的高亮度垂直发光二极管（LED）装置。 LED器件通过以下方式形成：使用诸如物理气相沉积（PVD），化学气相沉积（CVD），蒸发，电镀或沉积法的沉积方法在LED外延结构的表面的边缘上形成金属电极 其任何组合; 然后执行包装过程。 LED的组成可以是氮化物，磷化物或砷化物。 本发明的LED具有以下优点：提高电流扩散性能，降低金属电极的光吸收，增加亮度，提高效率，从而提高能量效率。 金属电极位于器件的边缘和发光侧。 金属电极具有两个侧壁，其中一个侧壁可以从另一个侧壁接收来自该装置的更多的发射光。

    Light emitting diode device
    4.
    发明授权
    Light emitting diode device 有权
    发光二极管装置

    公开(公告)号：US08450758B2

    公开(公告)日：2013-05-28

    申请号：US12939142

    申请日：2010-11-03

    Applicant: Wen-Huang Liu ,  Li-Wei Shan ,  Chen-Fu Chu

    Inventor： Wen-Huang Liu ,  Li-Wei Shan ,  Chen-Fu Chu

    IPC: H01L33/38

    CPC classification number: H01L33/60 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405

    Abstract: A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.

    Abstract translation: 具有向外定位的金属电极的高亮度垂直发光二极管（LED）装置。 LED器件通过以下方式形成：使用诸如物理气相沉积（PVD），化学气相沉积（CVD），蒸发，电镀或沉积法的沉积方法在LED外延结构的表面的边缘上形成金属电极 其任何组合; 然后执行包装过程。 LED的组成可以是氮化物，磷化物或砷化物。 本发明的LED具有以下优点：提高电流扩散性能，降低金属电极的光吸收，增加亮度，提高效率，从而提高能量效率。 金属电极位于器件的边缘和发光侧。 金属电极具有两个侧壁，其中一个侧壁可以从另一个侧壁接收来自该装置的更多的发射光。

    PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES
    6.
    发明申请
    PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
    金属器件外延结构的保护

    公开(公告)号：US20120074384A1

    公开(公告)日：2012-03-29

    申请号：US13310552

    申请日：2011-12-02

    Applicant: FENG-HSU FAN ,  Trung Tri Doan ,  Chuong Ann Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yl Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jul-Kang Yen

    Inventor： FENG-HSU FAN ,  Trung Tri Doan ,  Chuong Ann Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yl Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jul-Kang Yen

    IPC: H01L33/06

    CPC classification number: H01L33/0079 ,  H01L33/405 ,  H01L33/44 ,  H01L33/64

    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

    Abstract translation: 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

    METHOD OF SEPARATING SEMICONDUCTOR DIES
    7.
    发明申请
    METHOD OF SEPARATING SEMICONDUCTOR DIES 有权
    分离半导体器件的方法

    公开(公告)号：US20080032488A1

    公开(公告)日：2008-02-07

    申请号：US11835289

    申请日：2007-08-07

    Applicant: JIUNN-YI CHU ,  Chao-Chen Cheng ,  Chen-Fu Chu ,  Trung Tri Doan

    Inventor： JIUNN-YI CHU ,  Chao-Chen Cheng ,  Chen-Fu Chu ,  Trung Tri Doan

    IPC: H01L21/78

    CPC classification number: H01L21/78 ,  H01L33/0079 ,  H01L33/0095

    Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.

    Abstract translation: 描述了在半导体制造期间分离多个管芯的方法。 在包含多个管芯的半导体晶片的上表面上，种子金属层可以用于在其上方生长硬金属层用于处理。 除了存在一块停止电镀（EP）材料之外，金属可以被覆盖在这些金属层之上。 停止EP材料可能被擦除，并且阻挡层可以形成在整个剩余结构之上。 可以去除衬底，并且各个管芯可以具有添加到半导体表面的任何期望的接合焊盘和/或图案化电路。 激光切割加热后的重金属硬度应足够强大。 可以将胶带加入到晶片中，并且可以使用断路器将模具分开。 可以将所得到的结构翻转，并且可以将带扩展以分离各个管芯。

    VERTICAL LIGHT EMITTING DIODE (VLED) DIE AND METHOD OF FABRICATION
    10.
    发明申请
    VERTICAL LIGHT EMITTING DIODE (VLED) DIE AND METHOD OF FABRICATION 审中-公开
    垂直发光二极管（VLED）DIE和制造方法

    公开(公告)号：US20120168714A1

    公开(公告)日：2012-07-05

    申请号：US12983436

    申请日：2011-01-03

    Applicant: Jiunn-Yi Chu ,  Chen-Fu Chu ,  Chao-Chen Cheng

    Inventor： Jiunn-Yi Chu ,  Chen-Fu Chu ,  Chao-Chen Cheng

    IPC: H01L33/04

    CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/647 ,  H01L2224/73265 ,  H01L2933/0016

    Abstract: A vertical light emitting diode (VLED) die includes a first metal having a first surface and an opposing second surface; a second metal on the second surface of the first metal; a p-type semiconductor layer on the first surface of the first metal; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.

    Abstract translation: 垂直发光二极管（VLED）模具包括具有第一表面和相对的第二表面的第一金属; 在所述第一金属的第二表面上的第二金属; 在第一金属的第一表面上的p型半导体层; 配置成发光的p型半导体层上的多量子阱（MQW）层; 和多量子阱（MQW）层上的n型半导体层。

Patent Agency Ranking