公开(公告)号：US20120074384A1

公开(公告)日：2012-03-29

申请号：US13310552

申请日：2011-12-02

Applicant: FENG-HSU FAN ,  Trung Tri Doan ,  Chuong Ann Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yl Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jul-Kang Yen

Inventor： FENG-HSU FAN ,  Trung Tri Doan ,  Chuong Ann Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yl Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jul-Kang Yen

IPC: H01L33/06

CPC classification number: H01L33/0079 ,  H01L33/405 ,  H01L33/44 ,  H01L33/64

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

Abstract translation: 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。