公开(公告)号：US10055833B2

公开(公告)日：2018-08-21

申请号：US14952073

申请日：2015-11-25

Applicant: Carl Zeiss SMT GmbH

Inventor： Jan Hendrik Peters ,  Frederik Blumrich ,  Anthony Garetto ,  Thomas Scherübl ,  Renzo Capelli

IPC: G01N23/203 ,  G06T7/00 ,  G03F1/84

CPC classification number: G06T7/0008 ,  G03F1/84

Abstract: A reflective mask inspection system comprises a short wavelength radiation source for irradiating a reflective mask. A detector system detects the short wavelength radiation reflected from the reflective mask and a controller compares reflectance images of the reflective mask from the detector to characterize the mask. The system analyzes the spatially resolved reflectance characteristics of the substrate from different angles with respect to normal to the substrate and/or at different angles of rotation of the substrate. This information can be used to then analyze the mask for buried defects and then characterize those defects. This technique improves over current systems that rely on atomic force microscopes, which can only provide surface information.

公开(公告)号：US20190004417A1

公开(公告)日：2019-01-03

申请号：US16121594

申请日：2018-09-04

Applicant: Carl Zeiss SMT GmbH

Inventor： Sergey Oshemkov ,  Vladimir Kruglyakov ,  Frederik Blumrich ,  Yuval Perets

IPC: G03F1/24 ,  G03F7/20 ,  G03F1/22

CPC classification number: G03F1/24 ,  G03F1/22 ,  G03F7/70433 ,  G03F7/70625

Abstract: A method of correcting a critical dimension (CD) variation in extreme ultraviolet (EUV) photolithography includes mapping the CD variation of a wafer exposure field formed by a photolithography system that includes an EUV photolithography photomask. Parameters of a treatment to produce a change in reflectance at a working wavelength of EUV radiation in a region of a reflective multilayer of the photomask are determined, the change in reflectance being calculated to correct the mapped CD variation. A treatment beam is directed to the region. The region is treated with the beam in accordance with the determined parameters.

公开(公告)号：US10670955B2

公开(公告)日：2020-06-02

申请号：US16121594

申请日：2018-09-04

Applicant: Carl Zeiss SMT GmbH

Inventor： Sergey Oshemkov ,  Vladimir Kruglyakov ,  Frederik Blumrich ,  Yuval Perets

IPC: G03F1/24 ,  G03F7/20 ,  G03F1/22

Abstract: A method of correcting a critical dimension (CD) variation in extreme ultraviolet (EUV) photolithography includes mapping the CD variation of a wafer exposure field formed by a photolithography system that includes an EUV photolithography photomask. Parameters of a treatment to produce a change in reflectance at a working wavelength of EUV radiation in a region of a reflective multilayer of the photomask are determined, the change in reflectance being calculated to correct the mapped CD variation. A treatment beam is directed to the region. The region is treated with the beam in accordance with the determined parameters.

公开(公告)号：US10095101B2

公开(公告)日：2018-10-09

申请号：US15189058

申请日：2016-06-22

Applicant: Carl Zeiss SMT GmbH

Inventor： Sergey Oshemkov ,  Vladimir Kruglyakov ,  Frederik Blumrich ,  Yuval Perets

IPC: G03F1/24 ,  G03F7/20 ,  G03F1/22

Abstract: A method of correcting a critical dimension (CD) variation in extreme ultraviolet (EUV) photolithography includes mapping the CD variation of a wafer exposure field formed by a photolithography system that includes an EUV photolithography photomask. Parameters of a treatment to produce a change in reflectance at a working wavelength of EUV radiation in a region of a reflective multilayer of the photomask are determined, the change in reflectance being calculated to correct the mapped CD variation. A treatment beam is directed to the region. The region is treated with the beam in accordance with the determined parameters.

公开(公告)号：US20160169816A1

公开(公告)日：2016-06-16

申请号：US14952073

申请日：2015-11-25

Applicant: Carl Zeiss SMT GmbH

Inventor： Jan Hendrik Peters ,  Frederik Blumrich ,  Anthony Garetto ,  Thomas Scherübl ,  Renzo Capelli

IPC: G01N23/203 ,  G06T7/00

CPC classification number: G06T7/0008 ,  G03F1/84

Abstract: A reflective mask inspection system comprises a short wavelength radiation source for irradiating a reflective mask. A detector system detects the short wavelength radiation reflected from the reflective mask and a controller compares reflectance images of the reflective mask from the detector to characterize the mask. The system analyzes the spatially resolved reflectance characteristics of the substrate from different angles with respect to normal to the substrate and/or at different angles of rotation of the substrate. This information can be used to then analyze the mask for buried defects and then characterize those defects. This technique improves over current systems that rely on atomic force microscopes, which can only provide surface information.

Abstract translation: 反射掩模检查系统包括用于照射反射掩模的短波长辐射源。 检测器系统检测从反射掩模反射的短波长辐射，并且控制器比较来自检测器的反射掩模的反射率图像来表征掩模。 该系统从相对于基板垂直的不同角度和/或基板的不同旋转角度分析基板的空间分辨反射特性。 该信息可用于分析掩埋缺陷掩模，然后表征这些缺陷。 这种技术改进了依赖于原子力显微镜的现有系统，其只能提供表面信息。