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    Lightweight Structures for Enhancing the Thermal Emissivity of Surfaces
    2.
    发明申请
    Lightweight Structures for Enhancing the Thermal Emissivity of Surfaces 审中-公开
    用于提高表面热辐射率的轻型结构

    公开(公告)号：US20170047889A1

    公开(公告)日：2017-02-16

    申请号：US15233828

    申请日：2016-08-10

    Applicant: California Institute of Technology

    Inventor： Harry A. Atwater ,  Sergio Pellegrino ,  Seyed Ali Hajimiri ,  Dennis Callahan ,  Emily C. Warmann ,  Pilar Espinet Gonzalez ,  Jeffrey P. Bosco

    IPC: H02S40/42 ,  H02S40/22

    CPC classification number: H02S40/42 ,  B64G1/443 ,  B64G1/503 ,  B64G1/66 ,  H01L31/054 ,  H02S40/22 ,  Y02E10/52

    Abstract: Systems and methods in accordance with various embodiments of the invention implement textured metasurfaces that can provide for enhanced thermal emissivity. In one embodiment, a lightweight solar power generator includes: at least one photovoltaic cell including a photovoltaic material; at least one concentrator, configured to focus incident solar radiation onto the photovoltaic material; and at least one textured metasurface characterized by its inclusion of a plurality of microstructures, each having a characteristic lateral dimension of between approximately 1 μm and approximately 100 μm patterned thereon; where the at least one textured metasurface is disposed such that it is in thermal communication with at least some portion of the lightweight solar power generator that generates heat during the normal operation of the lightweight solar power generator, and is thereby configured to dissipate heat generated by the at least some portion.

    Abstract translation: 根据本发明的各种实施例的系统和方法实现可提供增强的热发射率的纹理表面。 在一个实施例中，轻型太阳能发电机包括：至少一个包括光伏材料的光伏电池; 至少一个集中器，被配置为将入射的太阳辐射聚焦到所述光伏材料上; 以及至少一个纹理表面，其特征在于其包含多个微结构，每个微结构具有图案化在其上的约1μm和约100μm之间的特征横向尺寸; 其中所述至少一个纹理区表面设置成使得其与所述轻型太阳能发电机的至少一部分热交换，所述至少一部分轻量级太阳能发电机在轻型太阳能发电机的正常运行期间产生热量，并且因此被配置成散发由 至少一部分。

    Method of making photovoltaic devices incorporating improved pnictide semiconductor films
    3.
    发明授权
    Method of making photovoltaic devices incorporating improved pnictide semiconductor films 有权
    制造具有改进的pnictide半导体膜的光伏器件的方法

    公开(公告)号：US09287435B2

    公开(公告)日：2016-03-15

    申请号：US14373598

    申请日：2013-01-30

    Applicant: DOW GLOBAL TECHNOLOGIES LLC ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

    Inventor： Gregory M. Kimball ,  Harry A. Atwater ,  Nathan S. Lewis ,  Jeffrey P. Bosco ,  Rebekah K. Feist

    IPC: H01L31/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/075 ,  H01L31/20 ,  H01L21/00

    CPC classification number: H01L31/18 ,  H01L31/022466 ,  H01L31/032 ,  H01L31/075 ,  H01L31/20 ,  Y02E10/548

    Abstract: The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication.

    Abstract translation: 本发明使用涉及在pnictide半导体膜的表面上形成富含富含富含亚硝酸盐区域的蚀刻处理的处理。在许多实践模式中，该区域非常薄，通常在2至3nm厚的数量级 许多实施例。 以前的调查人员已经离开了该地区，而不理解其存在的事实和/或其存在（如果知道）可能会损害所得设备的电子性能。 本发明认识到，区域的形成和去除有利地使得pnictide膜表面在电子缺陷减少的情况下非常平滑。 表面准备好进一步的器件制造。

    PHOTOVOLTAIC DEVICES INCORPORATING THIN CHALCOGENIDE FILM ELECTRICALLY INTERPOSED BETWEEN PNICTIDE-CONTAINING ABSORBER LAYER AND EMITTER LAYER
    6.
    发明申请
    PHOTOVOLTAIC DEVICES INCORPORATING THIN CHALCOGENIDE FILM ELECTRICALLY INTERPOSED BETWEEN PNICTIDE-CONTAINING ABSORBER LAYER AND EMITTER LAYER 审中-公开
    包含含PNICTIDE的吸收层和发射层之间的电化学膜的薄膜电容器的光伏器件

    公开(公告)号：US20150255637A1

    公开(公告)日：2015-09-10

    申请号：US14433221

    申请日：2013-10-07

    Applicant: DOW GLOBAL TECHNOLOGIES LLC ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

    Inventor： Jeffrey P. Bosco ,  Rebekah K. Feist ,  Harry A. Atwater ,  Marty W. Degroot ,  James C. Stevens ,  Gregory M. Kimball

    IPC: H01L31/0296 ,  H01L31/032 ,  H01L31/18 ,  H01L31/072

    CPC classification number: H01L31/0296 ,  H01L31/032 ,  H01L31/062 ,  H01L31/07 ,  H01L31/072 ,  H01L31/1085 ,  H01L31/109 ,  H01L31/1828 ,  Y02E10/50

    Abstract: The present invention provides strategies for improving the quality of the insulating layer in MIS and SIS devices in which the insulator layer interfaces with at least one pnictide-containing film The principles of the present invention are based at least in part on the discovery that very thin (20 nm or less) insulating films comprising a chalcogenide such as i-ZnS are surprisingly superior tunnel barriers in MIS and SIS devices incorporating pnictide semiconductors. In one aspect, the present invention relates to a photovoltaic device, comprising: a semiconductor region comprising at least one pnictide semiconductor; an insulating region electrically coupled to the semiconductor region, wherein the insulating region comprises at least one chalcogenide and has a thickness in the range from 0.5 nm to 20 nm; and a rectifying region electrically coupled to the semiconductor region in a manner such that the insulating region is electrically interposed between the collector region and the semiconductor region.

    Abstract translation: 本发明提供了改善MIS和SIS器件中的绝缘层的质量的策略，其中绝缘体层与至少一个含有pnictide的膜相接触。本发明的原理至少部分地基于以下发现：非常薄 （20nm以下）包含硫族化物如i-ZnS的绝缘膜在MIS和SIS器件中具有令人惊奇的优越的隧道势垒，其包含pnictide半导体。 一方面，本发明涉及一种光伏器件，包括：包含至少一个半导体的半导体区域; 绝缘区域，其电耦合到所述半导体区域，其中所述绝缘区域包括至少一个硫族化物，并且具有在0.5nm至20nm范围内的厚度; 以及整流区域，其以这样的方式电耦合到所述半导体区域，使得所述绝缘区域电插入在所述集电极区域和所述半导体区域之间。

    Compactable Power Generation Arrays
    9.
    发明申请
    Compactable Power Generation Arrays 审中-公开
    可压缩发电阵列

    公开(公告)号：US20170047886A1

    公开(公告)日：2017-02-16

    申请号：US15233739

    申请日：2016-08-10

    Applicant: California Institute of Technology

    Inventor： Harry A. Atwater ,  Sergio Pellegrino ,  Seyed Ali Hajimiri ,  Emily C. Warmann ,  Dennis Callahan ,  Jeffrey P. Bosco

    IPC: H02S40/22 ,  H02S30/20

    CPC classification number: H02S40/22 ,  H02S30/20 ,  Y02E10/52

    Abstract: Compactable power generation arrays are provided. The compactable power generation arrays may include a structural substrate body having an array of solar concentrators configured to receive and re-direct solar radiation onto a plurality of photovoltaic (PV) cells. In many other embodiments the PV cells may be disposed upon a back surface of each of the solar concentrators such that an adjacent solar concentrator is configured to re-direct solar radiation onto the PV cell disposed on the back surface of the adjacent solar concentrator.

    Abstract translation: 提供可压缩的发电阵列。 可紧凑发电阵列可以包括具有太阳能集中器阵列的结构基板主体，其被配置为接收太阳辐射并将太阳辐射重新引导到多个光伏（PV）电池上。 在许多其他实施例中，PV电池可以设置在每个太阳能集中器的后表面上，使得相邻的太阳能集中器被配置为将太阳辐射重新引导到设置在相邻太阳能集中器的背表面上的PV电池上。

    METHOD OF MAKING PHOTOVOLTAIC DEVICES WITH REDUCED CONDUCTION BAND OFFSET BETWEEN PNICTIDE ABSORBER FILMS AND EMITTER FILMS
    10.
    发明申请
    METHOD OF MAKING PHOTOVOLTAIC DEVICES WITH REDUCED CONDUCTION BAND OFFSET BETWEEN PNICTIDE ABSORBER FILMS AND EMITTER FILMS 审中-公开
    PNICTIDE吸收膜和发射体膜之间具有减少导电带偏移的光伏器件的制造方法

    公开(公告)号：US20160071994A1

    公开(公告)日：2016-03-10

    申请号：US14373599

    申请日：2013-01-30

    Applicant: DOW GLOBAL TECHNOLOGIES LLC ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

    Inventor： Jeffrey P. Bosco ,  Gregory M. Kimball ,  Harry A. Atwater ,  Nathan S. Lewis ,  Rebekah K. Feist ,  Marty W. DeGroot

    IPC: H01L31/072 ,  H01L31/18

    CPC classification number: H01L31/072 ,  H01L31/022466 ,  H01L31/032 ,  H01L31/18 ,  Y02E10/50

    Abstract: The principles of the present invention are used to reduce the conduction band offset between chalcogenide emitter and pnictide absorber films. Alternatively stated, the present invention provides strategies to more closely match the electron affinity characteristics between the absorber and emitter components. The resultant photovoltaic devices have the potential to have higher efficiency and higher open circuit voltage. The resistance of the resultant junctions would be lower with reduced current leakage. In illustrative modes of practice, the present invention incorporates one or more tuning agents into the emitter layer in order to adjust the electron affinity characteristics, thereby reducing the conduction band offset between the emitter and the absorber. In the case of an n-type emitter such as ZnS or a tertiary compound such as zinc sulfide selenide (optionally doped with Al) or the like, an exemplary tuning agent is Mg when the absorber is a p-type pnictide material such as zinc phosphide or an alloy of zinc phosphide incorporating at least one additional metal in addition to Zn and optionally at least one non-metal in addition to phosphorus. Consequently, photovolotaic devices incorporating such films would demonstrate improved electronic performance.

    Abstract translation: 本发明的原理用于降低硫族化物发射体和pnictide吸收膜之间的导带偏移。 或者说，本发明提供了更紧密匹配吸收体和发射体组分之间的电子亲和特性的策略。 所得到的光伏器件具有更高的效率和更高的开路电压的潜力。 所得结的电阻随着电流泄漏减小而降低。 在说明性实践中，本发明将一个或多个调谐剂并入发射极层，以便调节电子亲和特性，从而降低发射极和吸收体之间的导带偏移。 在诸如ZnS的n型发射体或诸如硫化锌硒化物（任选地掺杂有Al）等的叔化合物的情况下，当吸收剂是诸如锌的p型pnictide材料时，示例性调谐剂是Mg 磷化物或除了除了磷以外还含有至少一种另外的金属以及任选的至少一种非金属的磷化锌的合金。 因此，结合这样的薄膜的光电设备将显示出改进的电子性能。

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