公开(公告)号：US20240208198A1

公开(公告)日：2024-06-27

申请号：US18389252

申请日：2023-11-14

Applicant: CORNING INCORPORATED

Inventor： Julia Anne Dorothee Brueckner ,  Ya-Huei Chang ,  Kuan-Ting Kuo ,  Prantik Mazumder ,  Jian-Zhi Jay Zhang

IPC: B32B43/00 ,  B32B7/12 ,  B32B17/06

CPC classification number: B32B43/006 ,  B32B7/12 ,  B32B17/06 ,  H01L21/6835

Abstract: Articles and methods for temporary bonding of substrates are described. The articles include a photo-release layer to enable reversal of the temporary bonding upon exposure of the photo-release layer to light to separate the substrates. The method includes plasma treatment of the photo-release layer to increase the bonding energy. Higher bonding energy allows for processing of the article with greater mechanical force before separation. Plasma treatment also allows for temporary bonding with a thinner photo-release layer and a photo-release layer with low total thickness variation (TTV). Once separated from the article, a processed substrate can be bonded to other substrates.

公开(公告)号：US20230341986A1

公开(公告)日：2023-10-26

申请号：US17763353

申请日：2020-09-23

Applicant: CORNING INCORPORATED

Inventor： Ya-Huei Chang ,  Daniel Wayne Levesque, JR. ,  Jen-Chieh Lin ,  Lu Zhang

IPC: G06F3/044 ,  G06F3/041

CPC classification number: G06F3/0448 ,  G06F3/0446 ,  G06F3/0412 ,  G06F2203/04103

Abstract: Embodiments are related generally to display devices, and more particularly to displays or display tiles having electrodes that extend from a first surface to a second surface of a substrate.

公开(公告)号：US11328950B2

公开(公告)日：2022-05-10

申请号：US17153041

申请日：2021-01-20

Applicant: CORNING INCORPORATED

Inventor： Ya-Huei Chang ,  Jen-Chieh Lin ,  Jian-Zhi Jay Zhang

IPC: H01L21/762 ,  H01L29/24 ,  H01L21/304 ,  H01L21/02 ,  H01L21/48

Abstract: Embodiments of the disclosure relate to a method for fabricating semiconductor-on-insulator (SemOI) electronic components. In the method, a device wafer is bonded to a handling wafer. The device wafer includes a semiconductor device layer and a buried oxide layer. A substrate is adhered to the handling wafer. The substrate is a glass or a ceramic, and bonding occurs at an interface between the semiconductor device layer and the substrate. Material is removed from the device wafer to expose the buried oxide layer. The substrate is debonded from the handling wafer so as to provide an SemOI electronic component including the substrate, the semiconductor device layer, and the buried oxide layer.

公开(公告)号：US20210225693A1

公开(公告)日：2021-07-22

申请号：US17153041

申请日：2021-01-20

Applicant: CORNING INCORPORATED

Inventor： Ya-Huei Chang ,  Jen-Chieh Lin ,  Jian-Zhi Jay Zhang

IPC: H01L21/762 ,  H01L29/24 ,  H01L21/48 ,  H01L21/02 ,  H01L21/304

Abstract: Embodiments of the disclosure relate to a method for fabricating semiconductor-on-insulator (SemOI) electronic components. In the method, a device wafer is bonded to a handling wafer. The device wafer includes a semiconductor device layer and a buried oxide layer. A substrate is adhered to the handling wafer. The substrate is a glass or a ceramic, and bonding occurs at an interface between the semiconductor device layer and the substrate. Material is removed from the device wafer to expose the buried oxide layer. The substrate is debonded from the handling wafer so as to provide an SemOI electronic component including the substrate, the semiconductor device layer, and the buried oxide layer.

公开(公告)号：US11948792B2

公开(公告)日：2024-04-02

申请号：US17104723

申请日：2020-11-25

Applicant: CORNING INCORPORATED

Inventor： Ya-Huei Chang ,  Karl William Koch, III ,  Jen-Chieh Lin ,  Jian-Zhi Jay Zhang

IPC: H01L21/02 ,  H01L29/16

CPC classification number: H01L21/02422 ,  H01L29/1604

Abstract: Embodiments of a glass wafer for semiconductor fabrication processes are described herein. In some embodiments, a glass wafer includes: a glass substrate comprising: a top surface, a bottom surface opposing the top surface, and an edge surface between the top surface and the bottom surface; a first coating disposed atop the glass substrate, wherein the first coating is a doped crystalline silicon coating having a sheet-resistance of 100 to 1,000,000 ohm per square; and a second coating having one or more layers disposed atop the glass substrate, wherein the second coating comprises a silicon containing coating, wherein the glass wafer has an average transmittance (T) of less than 50% over an entire wavelength range of 400 nm to 1000 nm.

公开(公告)号：US20230361094A1

公开(公告)日：2023-11-09

申请号：US18026168

申请日：2021-11-17

Applicant: CORNING INCORPORATED

Inventor： Ya-Huei Chang ,  Sean Matthew Garner ,  David Robert Heine

IPC: H01L25/16 ,  C03C17/06 ,  H01L27/12

CPC classification number: H01L25/167 ,  C03C17/06 ,  H01L27/1214

Abstract: A glass substrate with improved microLED transfer characteristics is disclosed, the glass substrate comprising a first major surface, a second major surface opposite the first major surface, and a thickness therebetween. An electrically functional layer may be disposed on the first major surface. The glass wafer exhibits a waviness with a magnitude less than or equal to about 1 μm in a spatial wavelength range from about 0.25 mm to about 50 mm.

公开(公告)号：US20220140227A1

公开(公告)日：2022-05-05

申请号：US17515630

申请日：2021-11-01

Applicant: CORNING INCORPORATED

Inventor： Indrani Bhattacharyya ,  Julia Anne Dorothee Brueckner ,  Ya-Huei Chang ,  Bokyung Kong ,  Prantik Mazumder ,  Jun Ro Yoon ,  Jian-Zhi Jay Zhang

IPC: H01L41/312 ,  H01L41/337 ,  H01L41/187 ,  H01L41/08

Abstract: An article including a support unit, the support unit including a support substrate and a bonding layer such that the bonding layer is bonded to a surface of the support substrate. Furthermore, a total thickness variation TTV across a width of the support unit is about 2.0 microns or less.

公开(公告)号：US20210159076A1

公开(公告)日：2021-05-27

申请号：US17104723

申请日：2020-11-25

Applicant: CORNING INCORPORATED

Inventor： Ya-Huei Chang ,  Karl William Koch, III ,  Jen-Chieh Lin ,  Jian-Zhi Jay Zhang

IPC: H01L21/02 ,  H01L29/16

Abstract: Embodiments of a glass wafer for semiconductor fabrication processes are described herein. In some embodiments, a glass wafer includes: a glass substrate comprising: a top surface, a bottom surface opposing the top surface, and an edge surface between the top surface and the bottom surface; a first coating disposed atop the glass substrate, wherein the first coating is a doped crystalline silicon coating having a sheet-resistance of 100 to 1,000,000 ohm per square; and a second coating having one or more layers disposed atop the glass substrate, wherein the second coating comprises a silicon containing coating, wherein the glass wafer has an average transmittance (T) of less than 50% over an entire wavelength range of 400 nm to 1000 nm.