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公开(公告)号：US20150171259A1
公开(公告)日：2015-06-18
申请号：US14570324
申请日：2014-12-15
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , G02B6/12004 , H01L31/105 , Y02E10/547 , Y02P70/521
摘要： Fabrication of a photodetector is performed on a substrate comprising a first portion successively provided with a first semiconductor film, an electrically insulating layer, a second semiconductor film, and a protection layer. The substrate also comprises a second portion not comprising the second semiconductor film. It further comprises a third portion not comprising the second semiconductor film and the protection layer. The second semiconductor film is etched in the first portion to form a cavity. A PIN/NIP diode is formed in the third portion at least by means of deposition of a third semiconductor material which also comes and fills the cavity. A conversion layer is deposited to absorb a light signal originating from the second semiconductor film and to convert the light signal into an electric signal, the conversion layer electrically connecting the PIN/NIP diode.
摘要翻译： 在包括连续设置有第一半导体膜，电绝缘层，第二半导体膜和保护层的第一部分的基板上进行光电检测器的制造。 衬底还包括不包括第二半导体膜的第二部分。 它还包括不包括第二半导体膜和保护层的第三部分。 在第一部分中蚀刻第二半导体膜以形成空腔。 PIN / NIP二极管至少通过沉积也填充空腔的第三半导体材料形成在第三部分中。 沉积转换层以吸收源自第二半导体膜的光信号并将光信号转换成电信号，转换层电连接PIN / NIP二极管。
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2.发明申请METHOD FOR DETERMINING PREFERENTIAL DEPOSITION PARAMETERS FOR A THIN LAYER OF III-V MATERIAL 审中-公开用于确定III-V材料薄层的优选沉积参数的方法公开(公告)号：US20160126095A1
公开(公告)日：2016-05-05
申请号：US14933554
申请日：2015-11-05
IPC分类号： H01L21/02 , C30B25/16 , C30B29/68 , C30B29/08 , C30B29/40 , C30B29/42 , C30B25/18 , C30B29/06
CPC分类号： H01L21/02636 , C30B25/16 , C30B25/183 , C30B29/06 , C30B29/08 , C30B29/40 , C30B29/42 , C30B29/68 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/0262
摘要： First, second and third series of samples are successively made so as to determine the influence of the deposition parameters on the crystallographic quality of a layer of semiconductor material of III-V type. The parameters studied are successively the deposition pressure, the deposition temperature and the deposited thickness of a sub-layer of semiconductor material of III-V type so as to respectively determine a first deposition pressure, a first deposition temperature at the first deposition pressure, and a first deposited thickness at the first deposition temperature and at the first deposition pressure. The sub-layer of semiconductor material of III-V type is thickened by ways of a second layer of semiconductor material of III-V type deposited under different conditions.
摘要翻译： 首先，第二和第三系列样品依次进行，以确定沉积参数对III-V型半导体材料层的晶体学质量的影响。 所研究的参数依次是III-V型半导体材料的子层的沉积压力，沉积温度和沉积厚度，以分别确定第一沉积压力，第一沉积压力下的第一沉积温度，以及 在第一沉积温度和第一沉积压力下的第一沉积厚度。 III-V型半导体材料的子层通过在不同条件下沉积的III-V型第二半导体材料层的方式来增厚。
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公开(公告)号：US20160041339A1
公开(公告)日：2016-02-11
申请号：US14823324
申请日：2015-08-11
发明人： Jean-Marc FEDELI , Alexis ABRAHAM , Ségoléne OLIVIER , Yann BOGUMILOWICZ , Thomas MAGIS , Pierre BRIANCEAU
CPC分类号： G02B6/131 , B82Y20/00 , G02B6/107 , G02B6/136 , G02B2006/12061 , G02B2006/12142 , G02F1/025
摘要： A method of manufacturing an optical waveguide with a vertical slot including the steps of a) providing a substrate successively including an electric insulator layer and a crystalline semiconductor layer, b) forming a trench on the semiconductor layer to expose the electric insulator layer and defining first and second semiconductor areas on either side, step b) being executed so that the first semiconductor area has a lateral edge extending across the entire thickness of the semiconductor layer, c) forming the dielectric layer having the predetermined width across the entire thickness of the lateral edge, the method being remarkable in that the trench formed at step b) is configured so that the second semiconductor area forms a seed layer.
摘要翻译： 一种制造具有垂直槽的光波导的方法，包括以下步骤：a）提供依次包括电绝缘体层和结晶半导体层的衬底，b）在所述半导体层上形成沟槽以暴露所述电绝缘体层并限定第一 和第二半导体区域，步骤b）被执行，使得第一半导体区域具有横跨半导体层的整个厚度延伸的横向边缘，c）在横向的整个厚度上形成具有预定宽度的电介质层 边缘，该方法是显着的，因为在步骤b）形成的沟槽被配置为使得第二半导体区域形成种子层。
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