公开(公告)号：US20230223274A1

公开(公告)日：2023-07-13

申请号：US18150398

申请日：2023-01-05

Applicant: CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR LTD.

Inventor： Marc L. Tarabbia ,  Scott P. Warrick ,  Winston S. Blackley

IPC: H01L21/322 ,  H01L21/70 ,  H01L23/31 ,  H01L21/02 ,  H01L21/311 ,  H01L21/56 ,  H01L27/01 ,  H01L23/522

CPC classification number: H01L21/3221 ,  H01L21/707 ,  H01L23/3107 ,  H01L28/24 ,  H01L21/02172 ,  H01L21/02337 ,  H01L21/31144 ,  H01L21/56 ,  H01L27/016 ,  H01L23/5226

Abstract: An integrated circuit (IC) substrate manufacturing process provides time-dependent device characteristic variation due to hydrogen absorption by including one or more gettering layers near the devices that would otherwise absorb hydrogen and exhibit the variation as the hydrogen migrates in the devices. The method includes forming or mounting the devices on a top surface of the semiconductor wafer in die areas of the substrate, forming semiconductor structures in the semiconductor die areas, forming a getter layer above or adjacent to the devices in the die areas, and processing the wafer with one or more processes exposing the wafer to vapor having a hydrogen content, whereby an amount of hydrogen absorbed by the devices is reduced by presence of the getter layer. The method produces wafers including semiconductor dies with reduced hydrogen absorption by the devices and packaged ICs including the dies.