公开(公告)号：US11355658B2

公开(公告)日：2022-06-07

申请号：US16871782

申请日：2020-05-11

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshihiro Shoyama ,  Hiroshi Takakusagi ,  Yasuo Yamazaki ,  Hideaki Ishino ,  Toshiyuki Ogawa

IPC: H01L27/146 ,  H01L31/0288 ,  H01L31/0392

Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

公开(公告)号：US20150349013A1

公开(公告)日：2015-12-03

申请号：US14721150

申请日：2015-05-26

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshihiro Shoyama

IPC: H01L27/146 ,  H04N5/374

Abstract: A method of manufacturing a solid-state image sensor comprising a pixel part including a photoelectric conversion element and a MOS transistor, comprising steps of forming a first insulating film made of a nitrogen-containing silicon compound on the photoelectric conversion element and the MOS transistor, forming an opening in at least a portion of the first insulating film, which is positioned above a channel of the MOS transistor, forming a second insulating film on the first insulating film, forming a contact hole extending through the second insulating film and the first insulating film, and forming, in the contact hole, a contact plug to be connected to the MOS transistor.

Abstract translation: 一种制造固体图像传感器的方法，包括具有光电转换元件和MOS晶体管的像素部分，包括在光电转换元件和MOS晶体管上形成由含氮硅化合物构成的第一绝缘膜的步骤， 在位于所述MOS晶体管的沟道上方的所述第一绝缘膜的至少一部分上形成开口，在所述第一绝缘膜上形成第二绝缘膜，形成延伸穿过所述第二绝缘膜的接触孔和所述第一绝缘膜 在接触孔中形成要连接到MOS晶体管的接触插塞。

公开(公告)号：US20130088626A1

公开(公告)日：2013-04-11

申请号：US13625663

申请日：2012-09-24

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshihiro Shoyama

IPC: H01L27/146 ,  H04N5/335 ,  H01L31/18

CPC classification number: H01L27/14629 ,  H01L27/14627 ,  H01L27/14687 ,  H01L31/103

Abstract: A method of manufacturing a solid-state image sensor having a photoelectric conversion portion includes forming a silicon nitride film by a low-pressure chemical vapor deposition method using hexachlorodisilane (Si2Cl6) as a material gas such that the silicon nitride film covers at least a part of the photoelectric conversion portion.

Abstract translation: 一种制造具有光电转换部的固态图像传感器的方法包括：使用六氯二硅烷（Si 2 Cl 6）作为原料气体，通过低压化学气相沉积法形成氮化硅膜，使得氮化硅膜至少覆盖一部分 的光电转换部。

公开(公告)号：US10854654B2

公开(公告)日：2020-12-01

申请号：US16256131

申请日：2019-01-24

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshihiro Shoyama

IPC: H01L27/146

Abstract: A method of manufacturing a semiconductor apparatus, includes forming a first trench on a side of a first face of a semiconductor substrate having the first face and a second face, forming a gettering region by implanting ions in the semiconductor substrate through the first trench, and forming a second trench on the side of the first face of the semiconductor substrate after the forming the gettering region. A depth of a bottom surface of the second trench with reference to the first face is smaller than a depth of a bottom surface of the first trench with reference to the first face.

公开(公告)号：US10693023B2

公开(公告)日：2020-06-23

申请号：US15170148

申请日：2016-06-01

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshihiro Shoyama ,  Hiroshi Takakusagi ,  Yasuo Yamazaki ,  Hideaki Ishino ,  Toshiyuki Ogawa

IPC: H01L31/0288 ,  H01L27/146 ,  H01L31/0392

Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

公开(公告)号：US20190165034A1

公开(公告)日：2019-05-30

申请号：US16196389

申请日：2018-11-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Tasuku Kaneda ,  Toshihiro Shoyama

IPC: H01L27/146 ,  H04N5/378

Abstract: A photoelectric conversion device includes photoelectric converter arranged in semiconductor substrate made of silicon and is and transistor arranged on surface of the substrate. The photoelectric converter includes first region of a first conductivity type, configured to accumulate charges, and second region of second conductivity type. The first region is arranged between the surface and the second region. The substrate includes third region as source and/or drain of the transistor. The substrate includes, in position which is below the third region and is apart from the third region, impurity region containing group 14 element other than silicon. Depth from the surface of peak position in density distribution of the group 14 element in the impurity region is smaller than depth from the surface of peak position in density distribution of majority carrier in the second region.

公开(公告)号：US20190067364A1

公开(公告)日：2019-02-28

申请号：US16115317

申请日：2018-08-28

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takehito Okabe ,  Mitsuhiro Yomori ,  Nobuaki Kakinuma ,  Toshihiro Shoyama ,  Masashi Kusukawa

IPC: H01L27/146

Abstract: A method of manufacturing a photoelectric conversion apparatus includes heating a semiconductor substrate while a pixel circuit area is covered with an insulator film, performing ion implantation into the pixel circuit area through the insulator film, performing ion implantation into a peripheral circuit area after the heating, and forming a side wall on a side surface of a gate electrode of a transistor after the performing ion implantation into the peripheral circuit area.

公开(公告)号：US12068349B2

公开(公告)日：2024-08-20

申请号：US16592038

申请日：2019-10-03

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshihiro Shoyama

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14698 ,  H01L27/1463

Abstract: A method of manufacturing a solid-state image sensor comprising a pixel part including a photoelectric conversion element and a MOS transistor, comprising steps of forming a first insulating film made of a nitrogen-containing silicon compound on the photoelectric conversion element and the MOS transistor, forming an opening in at least a portion of the first insulating film, which is positioned above a channel of the MOS transistor, forming a second insulating film on the first insulating film, forming a contact hole extending through the second insulating film and the first insulating film, and forming, in the contact hole, a contact plug to be connected to the MOS transistor.

公开(公告)号：US20200274006A1

公开(公告)日：2020-08-27

申请号：US16871782

申请日：2020-05-11

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshihiro Shoyama ,  Hiroshi Takakusagi ,  Yasuo Yamazaki ,  Hideaki Ishino ,  Toshiyuki Ogawa

IPC: H01L31/0288 ,  H01L27/146 ,  H01L31/0392

Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

公开(公告)号：US20200235157A1

公开(公告)日：2020-07-23

申请号：US16840208

申请日：2020-04-03

Applicant: CANON KABUSHIKI KAISHA

Inventor： Shinji Kodaira ,  Takehito Okabe ,  Mitsuhiro Yomori ,  Nobuyuki Endo ,  Tomoyuki Tezuka ,  Toshihiro Shoyama ,  Jun Iwata

IPC: H01L27/146 ,  H04N5/369

Abstract: A photoelectric conversion apparatus includes a semiconductor substrate including a photoelectric conversion portion, a metal containing portion provided on the semiconductor substrate, an interlayer insulation film arranged on the semiconductor substrate to cover the metal containing portion, a first silicon nitride layer arranged on the photoelectric conversion portion to include a portion lying between the interlayer insulation film and the semiconductor substrate, a silicon oxide film including a portion arranged between the first silicon nitride layer and the photoelectric conversion portion, and a portion arranged between the interlayer insulation film and the metal containing portion, a second silicon nitride layer arranged between the silicon oxide film and the metal containing portion.