公开(公告)号：US20200274006A1

公开(公告)日：2020-08-27

申请号：US16871782

申请日：2020-05-11

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshihiro Shoyama ,  Hiroshi Takakusagi ,  Yasuo Yamazaki ,  Hideaki Ishino ,  Toshiyuki Ogawa

IPC: H01L31/0288 ,  H01L27/146 ,  H01L31/0392

Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

公开(公告)号：US11355658B2

公开(公告)日：2022-06-07

申请号：US16871782

申请日：2020-05-11

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshihiro Shoyama ,  Hiroshi Takakusagi ,  Yasuo Yamazaki ,  Hideaki Ishino ,  Toshiyuki Ogawa

IPC: H01L27/146 ,  H01L31/0288 ,  H01L31/0392

Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

公开(公告)号：US20160365462A1

公开(公告)日：2016-12-15

申请号：US15170148

申请日：2016-06-01

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshihiro Shoyama ,  Hiroshi Takakusagi ,  Yasuo Yamazaki ,  Hideaki Ishino ,  Toshiyuki Ogawa

IPC: H01L31/0288 ,  H01L31/0392 ,  H01L27/146

Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

Abstract translation: 一种制造成像装置的方法包括：制备包括晶片和布置在晶片上的硅层的衬底，所述晶片包括由氧浓度不小于2×10 16原子/ cm 3的单晶硅制成的第一半导体区域，以及 不大于4×1017原子/ cm3，所述硅层包括氧浓度低于所述第一半导体区域中的氧浓度的单晶硅制成的第二半导体区域; 在含有氧的气氛中对基板退火，将第二半导体区域的氧浓度设定在2×1016原子/ cm3以上且4×1017原子/ cm3以下的范围内; 以及在退火之后在第二半导体区域中形成光电转换元件。

公开(公告)号：US10693023B2

公开(公告)日：2020-06-23

申请号：US15170148

申请日：2016-06-01

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshihiro Shoyama ,  Hiroshi Takakusagi ,  Yasuo Yamazaki ,  Hideaki Ishino ,  Toshiyuki Ogawa

IPC: H01L31/0288 ,  H01L27/146 ,  H01L31/0392

Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.