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公开(公告)号：US20160372696A1
公开(公告)日：2016-12-22
申请号：US14906028
申请日：2015-08-19
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Rui Hong , Dan Wang , Zhengyin Xu
CPC classification number: H01L51/524 , H01L27/32 , H01L51/0024 , H01L51/52 , H01L51/5246 , H01L51/56 , H01L2251/301 , H01L2251/558
Abstract: A packaging method, a display panel and a display apparatus. The packaging method comprises steps of: forming a frit layer in a packaging area of a first substrate; forming at least a metal thin film and/or at least a silicon thin film on the frit layer formed on the first substrate, and forming at least a metal thin film and/or at least a silicon thin film in a packaging area of a second substrate, wherein one of the outermost thin film formed on the frit layer and the outermost thin film formed is a metal thin film, and the other is a silicon thin film; and vacuum laminating the first substrate and the second substrate, without the use of a laser to irradiate the frit layer during the packaging.
Abstract translation: 包装方法，显示面板和显示装置。 包装方法包括以下步骤：在第一基板的包装区域中形成玻璃料层; 在形成在第一基板上的玻璃料层上至少形成金属薄膜和/或至少硅薄膜，并且在第二基板的至少一个包装区域中形成至少金属薄膜和/或至少硅薄膜 基板，其中形成在所述玻璃料层上的最外薄膜和形成的最外薄膜之一是金属薄膜，另一个是硅薄膜; 并且在包装期间不使用激光来照射玻璃料层，并且真空层压第一基板和第二基板。
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Patent Agency Ranking
公开(公告)号：US11199742B2
公开(公告)日：2021-12-14
申请号：US16072791
申请日：2017-12-15
Inventor： Wei Lin Lai , Guanyin Wen , Zhengyin Xu , Chien Pang Huang
IPC: G02F1/1335 , H01L27/32 , H01L51/52
Abstract: A display device includes a sub-pixel unit, the sub-pixel unit includes: a reflective liquid crystal display unit with a reflective display region, including a liquid crystal layer and a reflective layer; and a electroluminescent display unit with a light-emitting display region, wherein the light-emitting display region is overlapped with the reflective display region; wherein the reflective layer and the electroluminescent display unit are located on both sides of the liquid crystal layer respectively.
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3.发明授权公开(公告)号：US10355022B2
公开(公告)日：2019-07-16
申请号：US15393030
申请日：2016-12-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jian Min , Xiaolong Li , Zhengyin Xu , Tao Gao , Dong Li , Shuai Zhang
IPC: H01L27/12 , H01L29/78 , H01L21/00 , H01L29/786
Abstract: A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The method comprises forming an active layer on a substrate, wherein source-and-drain-to-be-formed regions of the active layer are thicker than a semiconductor region between the source-and-drain-to-be-formed regions, and by a patterning process, forming a gate on the active layer, and forming a pattern of source and drain in the source-and-drain-to-be-formed regions of the active layer.
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公开(公告)号：US10355107B2
公开(公告)日：2019-07-16
申请号：US15543726
申请日：2016-07-25
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jian Min , Xiaolong Li , Tao Gao , Liangjian Li , Zhengyin Xu
IPC: H01L21/02 , H01L21/30 , H01L27/12 , H01L29/36 , H01L29/66 , H01L21/027 , H01L29/786
Abstract: The present application discloses a method of fabricating a polycrystalline silicon thin film transistor, the method including forming an amorphous silicon layer on a base substrate having a pattern corresponding to a polycrystalline silicon active layer of the thin film transistor; the amorphous silicon layer having a first region corresponding to a source electrode and drain electrode contact region in the polycrystalline silicon active layer and a second region corresponding to a channel region in the polycrystalline silicon active layer; forming a first dopant layer on a side of the second region distal to the base substrate; forming a second dopant layer on a side of the first region distal to the base substrate; and crystallizing the amorphous silicon layer, the first dopant layer, and the second dopant layer to form the polycrystalline silicon active layer, the polycrystalline silicon active layer being doped with a dopant of the first dopant layer in the second region and doped with a dopant of the second dopant layer in the first region during the step of crystallizing the amorphous silicon layer.
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5.发明授权公开(公告)号：US10249735B2
公开(公告)日：2019-04-02
申请号：US15236696
申请日：2016-08-15
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jian Min , Xiaolong Li , Zhengyin Xu , Ping Song , Youwei Wang
IPC: H01L21/02 , H01L29/66 , H01L21/28 , H01L21/3105 , H01L27/12 , H01L29/786 , H01L29/423
Abstract: The present disclosure provides a TFT, its manufacturing method, an array substrate and a display device. The method includes steps of: forming a pattern of a gate electrode on a base substrate; forming a gate insulation layer with an even surface; forming a pattern of a polysilicon semiconductor layer; and forming patterns of a source electrode and a drain electrode. The step of forming the pattern of the polysilicon semiconductor layer includes: crystallizing the amorphous silicon layer, so as to form the polysilicon semiconductor layer.
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公开(公告)号：US10147901B2
公开(公告)日：2018-12-04
申请号：US14906028
申请日：2015-08-19
Applicant: Boe Technology Group Co., Ltd.
Inventor： Rui Hong , Dan Wang , Zhengyin Xu
Abstract: A packaging method, a display panel, and a display apparatus. The packaging method comprises steps of: forming a frit layer in a packaging area of a first substrate; forming at least a metal thin film and/or at least a silicon thin film on the frit layer formed on the first substrate, and forming at least a metal thin film and/or at least a silicon thin film in a packaging area of a second substrate, wherein one of the outermost thin film formed on the frit layer and the outermost thin film formed is a metal thin film, and the other is a silicon thin film; and vacuum laminating the first substrate and the second substrate, without the use of a laser to irradiate the frit layer during the packaging.
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