公开(公告)号：US09099440B2

公开(公告)日：2015-08-04

申请号：US13991371

申请日：2012-11-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qi Yao ,  Tianming Dai ,  Feng Zhang ,  Zhanfeng Cao ,  Peiyu Zhu

IPC: H01L21/00 ,  H01L21/467 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/45

CPC classification number: H01L21/467 ,  H01L27/1214 ,  H01L27/1259 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: Embodiments of the present invention disclose a manufacturing method of an array substrate, an array substrate and a display. The manufacturing method comprises: forming a gate electrode of a TFT on a substrate; forming a metal oxide semiconductor thin film and a top metal thin film, and performing a mask process to the metal oxide semiconductor thin film and the top metal thin film, in order to form an active layer opposing the gate electrode and a source electrode and a drain electrode of the TFT respectively; and forming a passivation layer overlying the source electrode and the drain electrode, wherein during the mask process to the top metal thin film, a hydrogen peroxide-based etchant with a pH value between 6 and 8 is used to etch the top metal thin film.

Abstract translation: 本发明的实施例公开了阵列基板，阵列基板和显示器的制造方法。 制造方法包括：在基板上形成TFT的栅电极; 形成金属氧化物半导体薄膜和顶部金属薄膜，并且对金属氧化物半导体薄膜和顶部金属薄膜进行掩模处理，以便形成与栅电极和源电极相对的有源层和 TFT的漏电极; 以及形成覆盖源极和漏电极的钝化层，其中在对顶部金属薄膜的掩模处理期间，使用pH值在6和8之间的基于过氧化氢的蚀刻剂来蚀刻顶部金属薄膜。

公开(公告)号：US20140054586A1

公开(公告)日：2014-02-27

申请号：US13991371

申请日：2012-11-21

Applicant: Boe Technology Group Co., Ltd.

Inventor： Qi Yao ,  Tianming Dai ,  Feng Zhang ,  Zhanfeng Cao ,  Peiyu Zhu

IPC: H01L21/467 ,  H01L27/12

CPC classification number: H01L21/467 ,  H01L27/1214 ,  H01L27/1259 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: Embodiments of the present invention disclose a manufacturing method of an array substrate, an array substrate and a display. The manufacturing method comprises: forming a gate electrode of a TFT on a substrate; forming a metal oxide semiconductor thin film and a top metal thin film, and performing a mask process to the metal oxide semiconductor thin film and the top metal thin film, in order to form an active layer opposing the gate electrode and a source electrode and a drain electrode of the TFT respectively; and forming a passivation layer overlying the source electrode and the drain electrode, wherein during the mask process to the top metal thin film, a hydrogen peroxide-based etchant with a pH value between 6 and 8 is used to etch the top metal thin film.

Abstract translation: 本发明的实施例公开了阵列基板，阵列基板和显示器的制造方法。 制造方法包括：在基板上形成TFT的栅电极; 形成金属氧化物半导体薄膜和顶部金属薄膜，并且对金属氧化物半导体薄膜和顶部金属薄膜进行掩模处理，以便形成与栅电极和源电极相对的有源层和 TFT的漏电极; 以及形成覆盖源极和漏电极的钝化层，其中在对顶部金属薄膜的掩模处理期间，使用pH值在6和8之间的基于过氧化氢的蚀刻剂来蚀刻顶部金属薄膜。