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公开(公告)号：US10026609B2
公开(公告)日：2018-07-17
申请号：US14921866
申请日：2015-10-23
发明人： Sidlgata V. Sreenivasan , Anshuman Cherala , Meghali Chopra , Roger Bonnecaze , Ovadia Abed , Bailey Yin , Akhila Mallavarapu , Shrawan Singhal , Brian Gawlik
摘要： A method for template fabrication of ultra-precise nanoscale shapes. Structures with a smooth shape (e.g., circular cross-section pillars) are formed on a substrate using electron beam lithography. The structures are subject to an atomic layer deposition of a dielectric interleaved with a deposition of a conductive film leading to nanoscale sharp shapes with features that exceed electron beam resolution capability of sub-10 nm resolution. A resist imprint of the nanoscale sharp shapes is performed using J-FIL. The nanoscale sharp shapes are etched into underlying functional films on the substrate forming a nansohaped template with nanoscale sharp shapes that include sharp corners and/or ultra-small gaps. In this manner, sharp shapes can be retained at the nanoscale level. Furthermore, in this manner, imprint based shape control for novel shapes beyond elementary nanoscale structures, such as dots and lines, can occur at the nanoscale level.
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2.发明申请公开(公告)号：US20160118249A1
公开(公告)日：2016-04-28
申请号：US14921866
申请日：2015-10-23
发明人： Sidlgata V. Sreenivasan , Anshuman Cherala , Meghali Chopra , Roger Bonnecaze , Ovadia Abed , Bailey Yin , Akhila Mallavarapu , Shrawan Singhal , Brian Gawlik
IPC分类号： H01L21/02
CPC分类号： H01L21/02521 , B81C1/00031 , B81C2201/0187 , B82Y40/00 , G03F7/0002 , G11B5/746 , H01L21/02381 , H01L21/02617 , H01L21/3086 , H01L29/945 , Y10S977/887 , Y10S977/888 , Y10S977/89
摘要： A method for template fabrication of ultra-precise nanoscale shapes. Structures with a smooth shape (e.g., circular cross-section pillars) are formed on a substrate using electron beam lithography. The structures are subject to an atomic layer deposition of a dielectric interleaved with a deposition of a conductive film leading to nanoscale sharp shapes with features that exceed electron beam resolution capability of sub-10 nm resolution. A resist imprint of the nanoscale sharp shapes is performed using J-FIL. The nanoscale sharp shapes are etched into underlying functional films on the substrate forming a nansohaped template with nanoscale sharp shapes that include sharp corners and/or ultra-small gaps. In this manner, sharp shapes can be retained at the nanoscale level. Furthermore, in this manner, imprint based shape control for novel shapes beyond elementary nanoscale structures, such as dots and lines, can occur at the nanoscale level.
摘要翻译： 一种超精密纳米尺寸模板制作方法。 使用电子束光刻在基板上形成具有平滑形状（例如圆形横截面支柱）的结构。 这些结构受到与导电膜沉积物交替的介电质的原子层沉积，导致具有超过10nm分辨率的电子束分辨能力的特征的纳米级锐利形状。 使用J-FIL进行纳米级锐利形状的抗蚀刻印刷。 将纳米级尖锐形状蚀刻到基底上的下面的功能膜中，形成具有包括尖角和/或超小间隙的纳米尖锐形状的纳米成形模板。 以这种方式，尖锐的形状可以保持在纳米级。 此外，以这种方式，可以在纳米尺度上发生基本的纳米尺度结构（例如点和线）之外的新颖形状的基于压印的形状控制。
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3.发明申请公开(公告)号：US20180095936A1
公开(公告)日：2018-04-05
申请号：US15286380
申请日：2016-10-05
发明人： Roger T. Bonnecaze , Meghali Chopra
CPC分类号： H01J37/32009 , G06F17/50 , G06F2217/10 , H01J2237/334
摘要： A method, system and computer program product for optimizing a manufacturing or fabrication process. A set of parameters for a selected model is received. A prior distribution of values for the model parameters is adopted which summarizes any known information for the model parameters. A utility function which reflects a purpose of an experiment is specified. After selecting an experimental design from a set of experimental designs and selecting experimental data from a sample space of data based on the selected experimental data, a Bayesian technique is used to calculate a posterior distribution of values for the model parameters based on the selected experimental data and the prior distribution of values for the model parameters. In response to the model uncertainty reaching a desired threshold, the posterior distribution of values for the model parameters is selected to be used to adjust the manufacturing/fabrication process to manufacture/fabricate a device.
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