High-refractivity low-dispersion optical glass
    1.
    发明授权
    High-refractivity low-dispersion optical glass 有权
    高折射率低分散光学玻璃

    公开(公告)号:US08367575B2

    公开(公告)日:2013-02-05

    申请号:US13123512

    申请日:2009-07-15

    IPC分类号: C03C3/068

    CPC分类号: C03C3/068

    摘要: The invention provides an environment-friendly optical glass with high refractive index, low dispersion and high light transmittance. The optical glass includes 6%-17% of B2O3, 2-10% of SiO2, more than 25% but less than 45% of La2O3, 5-25% of Gd2O3, 0-3% of Nb2O5, more than 19% but less than 27% of Ta2O5, 0-16% of ZnO, 0-5% of BaO, 0-5% of CaO, 0-5% of SrO, 0-9% of ZrO2, 0-8% of Y2O3, 0-8% of Yb2O3, 0-5% of WO3, 0-2% of Li2O, Na2O and K2O, equal to 0.01% but less than 0.1% of Sb2O3 and 0-1% of SnO2 optical glass. The environment-friendly optical glass does not contain GeO2, and has refractive index of 1.85-1.90, Abbe number of 35-45, the corresponding wavelength below 440 nm when transmittance thereof reaches 80% and high transmittance.

    摘要翻译: 本发明提供了一种具有高折射率,低色散和高透光率的环保光学玻璃。 光学玻璃包括6%-17%的B 2 O 3,2〜10%的SiO 2,超过25%但小于45%的L​​a 2 O 3,5〜25%的Gd 2 O 3,0〜3%的Nb 2 O 5,超过19% 少于27%的Ta2O5,0-16%的ZnO,0-5%的BaO,0-5%的CaO,0-5%的SrO,0-9%的ZrO2,0-8%的Y2O3,0 -8%的Yb2O3,0-5%的WO3,0-2%的Li2O,Na2O和K2O,等于0.01%,但小于0.1%的Sb2O3和0-1%的SnO2光学玻璃。 环境友好的光学玻璃不含GeO 2,折射率为1.85-1.90,阿贝数为35-45,当其透光率达到80%时,相应的波长低于440nm,透光率高。

    HIGH-REFRACTIVITY LOW-DISPERSION OPTICAL GLASS
    2.
    发明申请
    HIGH-REFRACTIVITY LOW-DISPERSION OPTICAL GLASS 有权
    高反射率低分散光学玻璃

    公开(公告)号:US20110195833A1

    公开(公告)日:2011-08-11

    申请号:US13123512

    申请日:2009-07-15

    IPC分类号: C03C3/068

    CPC分类号: C03C3/068

    摘要: The invention provides an environment-friendly optical glass with high refractive index, low dispersion and high light transmittance. The optical glass includes 6%-17% of B2O3, 2-10% of SiO2, more than 25% but less than 45% of La2O3, 5-25% of Gd2O3, 0-3% of Nb2O5, more than 19% but less than 27% of Ta2O5, 0-16% of ZnO, 0-5% of BaO, 0-5% of CaO, 0-5% of SrO, 0-9% of ZrO2, 0-8% of Y2O3, 0-8% of Yb2O3, 0-5% of WO3, 0-2% of Li2O, Na2O and K2O, equal to 0.01% but less than 0.1% of Sb2O3 and 0-1% of SnO2 optical glass. The environment-friendly optical glass does not contain GeO2, and has refractive index of 1.85-1.90, Abbe number of 35-45, the corresponding wavelength below 440 nm when transmittance thereof reaches 80% and high transmittance.

    摘要翻译: 本发明提供了一种具有高折射率,低色散和高透光率的环保光学玻璃。 光学玻璃包括6%-17%的B 2 O 3,2〜10%的SiO 2,超过25%但小于45%的L​​a 2 O 3,5〜25%的Gd 2 O 3,0〜3%的Nb 2 O 5,超过19% 少于27%的Ta2O5,0-16%的ZnO,0-5%的BaO,0-5%的CaO,0-5%的SrO,0-9%的ZrO2,0-8%的Y2O3,0 -8%的Yb2O3,0-5%的WO3,0-2%的Li2O,Na2O和K2O,等于0.01%,但小于0.1%的Sb2O3和0-1%的SnO2光学玻璃。 环境友好的光学玻璃不含GeO 2,折射率为1.85-1.90,阿贝数为35-45,当其透光率达到80%时,相应的波长低于440nm,透光率高。

    Gaming desk
    3.
    外观设计

    公开(公告)号:USD875440S1

    公开(公告)日:2020-02-18

    申请号:US29655547

    申请日:2018-07-05

    申请人: Weimin Li

    设计人: Weimin Li

    Precursors for silicon dioxide gap fill
    4.
    发明授权
    Precursors for silicon dioxide gap fill 有权
    二氧化硅填充前体

    公开(公告)号:US09337054B2

    公开(公告)日:2016-05-10

    申请号:US12665929

    申请日:2008-06-27

    IPC分类号: H01L21/316 H01L21/02

    摘要: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

    摘要翻译: 描述了一种全填充沟槽结构,其包括其中具有高纵横比沟槽的微电子器件衬底,并填充了其整个整体质量基本上无空隙特征和基本均匀密度的二氧化硅。 还描述了制造半导体产品的方法,其涉及使用特定的硅前体组合物,用于在沟槽中形成基本上无空隙且基本均匀的密度二氧化硅材料。 前体填充组合物可以包括硅和锗,以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。 可以在前体填充组合物中使用抑制剂组分,以消除或最小化固化沟槽填充材料中的接缝形成。

    Protection in integrated circuits

    公开(公告)号:US07632737B2

    公开(公告)日:2009-12-15

    申请号:US11458064

    申请日:2006-07-17

    IPC分类号: H01L21/762

    CPC分类号: H01L21/76235

    摘要: A method including, prior to a plasma heat-up operation, forming a liner on structure coated with an insulator. And a method including forming a trench on a substrate, forming an insulator on the trench, and after forming a liner having a thickness of between about 50 angstroms and about 400 angstroms on the insulator, applying a plasma heat-up operation to the substrate.