Avoiding excessive cross-terminal voltages of low voltage transistors due to undesirable supply-sequencing in environments with higher supply voltages
    1.
    发明授权
    Avoiding excessive cross-terminal voltages of low voltage transistors due to undesirable supply-sequencing in environments with higher supply voltages 有权
    在较高电源电压的环境中,由于不合需要的电源顺序,避免了过低的低压晶体管电压

    公开(公告)号:US07176749B2

    公开(公告)日:2007-02-13

    申请号:US10711532

    申请日:2004-09-24

    IPC分类号: G05F1/10 G05F3/02

    CPC分类号: G05F3/205

    摘要: Ensuring sufficient bias current is provided to a portion of a circuit containing low voltage transistors operating with a high supply voltage. Such a sufficient bias current may be ensured by generating a primary bias current from a low supply voltage and a backup bias current from a high supply voltage, and providing the backup bias current as the bias current if the primary bias current is not present. The primary bias current may be provided as the bias current when the low supply voltage is available. Thus, the backup bias current is provided as bias current in case of undesirable supply sequencing.

    摘要翻译: 确保足够的偏置电流被提供给包含以高电源电压工作的低压晶体管的电路的一部分。 可以通过从低电源电压和来自高电源电压的备用偏置电流产生初级偏置电流来确保这种足够的偏置电流,并且如果不存在初级偏置电流,则提供备用偏置电流作为偏置电流。 当低电源电压可用时,初级偏置电流可以作为偏置电流提供。 因此,在不期望的电源顺序的情况下,备用偏置电流被提供为偏置电流。

    Providing optimal supply voltage to integrated circuits
    2.
    发明授权
    Providing optimal supply voltage to integrated circuits 有权
    为集成电路提供最佳供电电压

    公开(公告)号:US07423475B2

    公开(公告)日:2008-09-09

    申请号:US10710861

    申请日:2004-08-09

    IPC分类号: G05F1/10

    CPC分类号: G06F1/26 G11C5/06

    摘要: A characteristic is measured on multiple portions of an integrated circuit, and the supply voltage adjusted based on the measurements. In an embodiment, the characteristic corresponds to propagation delay which indicates whether the integrated circuit is implemented with a strong, weak or nominal process corner. In general, the supply voltage can be increased in the case of a weak process corner and decreased in the case of a strong process corner.

    摘要翻译: 在集成电路的多个部分上测量特性,并且基于测量调整电源电压。 在一个实施例中,特性对应于传播延迟,其指示集成电路是用强的,弱的还是标称的工艺角来实现的。 通常,在过程拐角较弱的情况下,电源电压可以增加,而在过程拐角较强的情况下,电源电压可以提高。

    Design techniques enabling storing of bit values which can change when the design changes
    3.
    发明申请
    Design techniques enabling storing of bit values which can change when the design changes 审中-公开
    设计技术能够存储当设计改变时可能改变的位值

    公开(公告)号:US20050144582A1

    公开(公告)日:2005-06-30

    申请号:US10988921

    申请日:2004-11-15

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5068

    摘要: Techniques which allow a bit value stored/generated by integrated circuits to be changed by changing potentially only one of several masks used to fabricate the circuits. For example, when a single mask is to be re-designed to implement a design change (e.g., to fix minor bugs) and a version identifier is to be changed, the same mask can be used to implement the change in the version identifier as well. An embodiment allows the bit value to be changed any number of times by changing only one mask. As a result, the invention minimizes the number of masks that may need to be changed when implementing design changes.

    摘要翻译: 允许通过仅改变用于制造电路的多个掩模中的一个来改变由集成电路存储/生成的位值的技术。 例如,当要重新设计单个掩码以实现设计更改(例如,修复较小的错误)并且要更改版本标识符时,可以使用相同的掩码来实现版本标识符的更改,如 好。 一个实施例允许通过仅改变一个掩码来改变位值任意次数。 结果,本发明使实现设计改变时可能需要改变的掩模的数量最小化。

    Circuit for controlling temperature and enabling testing of a semiconductor chip
    4.
    发明授权
    Circuit for controlling temperature and enabling testing of a semiconductor chip 有权
    用于控制温度的电路,并能够测试半导体芯片

    公开(公告)号:US08384395B2

    公开(公告)日:2013-02-26

    申请号:US12774730

    申请日:2010-05-06

    IPC分类号: H01H31/02

    CPC分类号: G01R31/2875 G01R31/2856

    摘要: A circuit for controlling temperature of a semiconductor chip includes a first heating element that is built into the semiconductor chip. The first heating element generates heat to increase the temperature of the semiconductor chip. The chip also includes a temperature controller that is coupled to the first heating element and built into the semiconductor chip. The temperature controller controls the temperature to enable testing of the semiconductor chip at a desired temperature.

    摘要翻译: 用于控制半导体芯片的温度的电路包括内置在半导体芯片中的第一加热元件。 第一加热元件产生热量以增加半导体芯片的温度。 芯片还包括耦合到第一加热元件并内置于半导体芯片中的温度控制器。 温度控制器控制温度以使半导体芯片能够在期望的温度下进行测试。

    CIRCUIT FOR CONTROLLING TEMPERATURE AND ENABLING TESTING OF A SEMICONDUCTOR CHIP
    5.
    发明申请
    CIRCUIT FOR CONTROLLING TEMPERATURE AND ENABLING TESTING OF A SEMICONDUCTOR CHIP 有权
    用于控制半导体芯片的温度和启动测试的电路

    公开(公告)号:US20110273186A1

    公开(公告)日:2011-11-10

    申请号:US12774730

    申请日:2010-05-06

    IPC分类号: G01R31/26 G01R1/00

    CPC分类号: G01R31/2875 G01R31/2856

    摘要: A circuit for controlling temperature of a semiconductor chip includes a first heating element that is built into the semiconductor chip. The first heating element generates heat to increase the temperature of the semiconductor chip. The chip also includes a temperature controller that is coupled to the first heating element and built into the semiconductor chip. The temperature controller controls the temperature to enable testing of the semiconductor chip at a desired temperature.

    摘要翻译: 用于控制半导体芯片的温度的电路包括内置在半导体芯片中的第一加热元件。 第一加热元件产生热量以增加半导体芯片的温度。 芯片还包括耦合到第一加热元件并内置于半导体芯片中的温度控制器。 温度控制器控制温度以使半导体芯片能够在期望的温度下进行测试。