Surfactant-enhanced protection of micromechanical components from galvanic degradation
    1.
    发明授权
    Surfactant-enhanced protection of micromechanical components from galvanic degradation 失效
    表面活性剂增强了微机械部件对电流退化的保护

    公开(公告)号:US07560037B2

    公开(公告)日:2009-07-14

    申请号:US11213466

    申请日:2005-08-26

    Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.

    Abstract translation: 通过将牺牲和结构材料沉积在衬底上以在与衬底电连接的部件上形成结构层来形成微机电结构。 结构层的电位大于元件的电位。 结构材料的至少一部分被保护材料覆盖,该保护材料具有小于或等于部件的电位的电位。 牺牲材料用释放溶液除去。 保护材料和释放溶液中的至少一种被表面活性化,表面活性剂对组分的表面进行官能化。

    Surfactant-enhanced protection of micromechanical components from galvanic degradation
    2.
    发明申请
    Surfactant-enhanced protection of micromechanical components from galvanic degradation 失效
    表面活性剂增强了微机械部件对电流退化的保护

    公开(公告)号:US20070289940A1

    公开(公告)日:2007-12-20

    申请号:US11213466

    申请日:2005-08-26

    Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.

    Abstract translation: 通过将牺牲和结构材料沉积在衬底上以在与衬底电连接的部件上形成结构层来形成微机电结构。 结构层的电位大于元件的电位。 结构材料的至少一部分被保护材料覆盖,该保护材料具有小于或等于部件的电位的电位。 牺牲材料用释放溶液除去。 保护材料和释放溶液中的至少一种被表面活性化,表面活性剂对组分的表面进行官能化。

    Patterned functionalized silicon surfaces
    5.
    发明申请
    Patterned functionalized silicon surfaces 失效
    图案化的功能化硅表面

    公开(公告)号:US20050054215A1

    公开(公告)日:2005-03-10

    申请号:US10887792

    申请日:2004-07-09

    CPC classification number: H01L21/306 Y10S977/857

    Abstract: The present invention provides a method for preparing a silicon substrate and a silicon substrate having a silicon surface comprising a pattern of covalently bound monolayers. Each of the monolayers comprises an alkyne, wherein at least a portion of each monolayer is no more than about 5 molecules of the alkyne wide.

    Abstract translation: 本发明提供一种制备硅衬底和硅衬底的方法,所述硅衬底具有包含共价结合单层图案的硅表面。 每个单层包含炔,其中每个单层的至少一部分不超过约5分子的炔。

    Functionalized silicon surfaces
    7.
    发明申请
    Functionalized silicon surfaces 有权
    功能化的硅表面

    公开(公告)号:US20050106401A1

    公开(公告)日:2005-05-19

    申请号:US11010100

    申请日:2004-12-10

    CPC classification number: C07K17/14 Y10S436/823 Y10T428/31663

    Abstract: The present invention is directed to a silicon substrate having a monolayer formed by an electrochemically-induced reaction between silicon hydride moieties on the silicon surface and optionally substituted alkynes covalently bound to the surface of the silicon substrate and to a method for electrochemically producing such a functionalized silicon substrate. The method of forming a covalently bound monolayer on a silicon surface comprises the steps of contacting the silicon surface with a C2-C24 alkyne and electrografting optionally substituted alkynes to the silicon surface.

    Abstract translation: 本发明涉及具有通过硅表面上的硅氢化物部分和共价结合到硅衬底的表面上的任选取代的炔烃之间的电化学诱导反应形成的单层的硅衬底以及用于电化学生产这种官能化 硅衬底。 在硅表面上形成共价结合单层的方法包括以下步骤:使硅表面与C 2 -C 24炔烃接触,并将任选取代的炔烃电解至硅 表面。

    Desorption/ionization of analytes from porous light-absorbing semiconductor
    8.
    发明授权
    Desorption/ionization of analytes from porous light-absorbing semiconductor 失效
    多孔光吸收半导体分析物的解吸/电离

    公开(公告)号:US06288390B1

    公开(公告)日:2001-09-11

    申请号:US09520251

    申请日:2000-03-07

    CPC classification number: H01J49/0418 H01J49/164

    Abstract: A method for desorption and ionization of an analyte from a porous, light absorbing, semiconductor is disclosed that can be used to replace conventional mass-assisted laser desorption/ionization (MALDI) in the mass spectrometry of proteins and biomolecules. The process uses the semiconductor to trap an analyte on the semiconductor. The semiconductor is illuminated by a light source and absorbs the light energy. The semiconductor then uses the light energy is to desorbed and ionize the analyte. The analyte so desorbed and ionized is suitable for detection by mass analyzers.

    Abstract translation: 公开了一种用于从多孔光吸收半导体中解析和离子化分析物的方法,可用于在蛋白质和生物分子的质谱中替代常规的质量辅助激光解吸/电离(MALDI)。 该方法使用半导体捕获半导体上的分析物。 半导体被光源照射并吸收光能。 然后,半导体使用光能将分析物解吸和电离。 被解吸和电离的分析物适用于大量分析仪的检测。

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