公开(公告)号：US20090179303A1

公开(公告)日：2009-07-16

申请号：US11792015

申请日：2005-12-12

申请人： Bernd Heinemann ,  Holger Rücker ,  Jürgen Drews ,  Steffen Marschmayer

发明人： Bernd Heinemann ,  Holger Rücker ,  Jürgen Drews ,  Steffen Marschmayer

IPC分类号： H01L29/732 ,  H01L21/331

CPC分类号： H01L29/66287 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

摘要： A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged in an opening of the insulation region and comprising monocrystalline semiconductor material of a second conductivity type, which is either in the form of a collector or an emitter, and which has a first heightwise portion and an adjoining second heightwise portion which is further away from the substrate interior in a heightwise direction, wherein only the first heightwise portion is enclosed by the insulation region in lateral directions perpendicular to the heightwise direction, a second semiconductor electrode of semiconductor material of the second conductivity type, which is in the form of the other type of semiconductor electrode, a base of monocrystalline semiconductor material of the first conductivity type, and a base connection region having a monocrystalline portion which in a lateral direction laterally surrounds the second heightwise portion, which is further towards the substrate interior as viewed from the base, of the first semiconductor electrode, and which rests with its underside directly on the insulation region.

摘要翻译： 一种垂直异双极晶体管，包括第一导电类型的半导体材料的衬底和设置在其中的绝缘区域，布置在绝缘区域的开口中的第一半导体电极，并且包括第二导电类型的单晶半导体材料， 收集器或发射器的形式，并且具有第一高度部分和相邻的第二高度部分，其在高度方向上远离基板内部，其中只有第一高度方向部分被垂直的横向方向上的绝缘区域包围 第二导电类型的半导体材料的第二半导体电极是另一种类型的半导体电极的形式的第二半导体电极，第一导电类型的单晶半导体材料的基底和具有第一导电类型的基底连接区域 单晶部分 横向方向横向地围绕第二高度方向部分，第二高度方向部分从第一半导体电极的基部朝向基板内部，并且其下侧直接位于绝缘区域上。

公开(公告)号：US20090206335A1

公开(公告)日：2009-08-20

申请号：US10581127

申请日：2004-12-01

申请人： Bernd Heinemann ,  Jürgen Drews ,  Steffen Marschmayer ,  Holger Rücker

发明人： Bernd Heinemann ,  Jürgen Drews ,  Steffen Marschmayer ,  Holger Rücker

IPC分类号： H01L27/082 ,  H01L29/04 ,  H01L21/8228 ,  H01L21/782

CPC分类号： H01L21/82285 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0826

摘要： The invention relates to a BiCMOS device comprising a substrate having a first type of conductivity and a number of active regions that are provided therein and are delimited in a lateral direction by flat field-insulating regions. Vertical npn bipolar epitaxial base transistors are disposed in a first partial number of the active regions while vertical pnp bipolar epitaxial base transistors are arranged in a second partial number of the active regions of the BiCMOS device. One transistor type or both transistor types are provided with both a collector region and a collector contact region in one and the same respective active region. In order to improve the high frequency characteristics, an insulation doping region that is configured so as to electrically insulate the collector and the substrate is provided between the collector region and the substrate exclusively in a first transistor type in which the type of conductivity of the substrate corresponds to that of the collector region. In addition, the collector region of the first transistor type or both transistor types is laterally delimited by the flat field-insulating regions.

摘要翻译： 本发明涉及一种BiCMOS器件，其包括具有第一类型的导电性的衬底和设置在其中的多个有源区，并且通过平坦的场绝缘区在横向方向上界定。 垂直npn双极外延基极晶体管被布置在第一部分数量的有源区中，而垂直pnp双极外延基极晶体管被布置在BiCMOS器件的有效区的第二部分数目中。 一个晶体管类型或两个晶体管类型在同一个相同的有源区域中设置有集电极区域和集电极接触区域。 为了提高高频特性，仅在集电极区域和衬底之间设置用于使集电极和衬底电绝缘的绝缘掺杂区域仅以基板的导电性类型的第一晶体管类型提供 对应于集电极区域。 此外，第一晶体管类型或两种晶体管类型的集电极区域由平坦的场绝缘区域横向界定。

公开(公告)号：US07855404B2

公开(公告)日：2010-12-21

申请号：US10581127

申请日：2004-12-01

申请人： Bernd Heinenman ,  Jürgen Drews ,  Steffen Marschmayer ,  Holger Rücker

发明人： Bernd Heinenman ,  Jürgen Drews ,  Steffen Marschmayer ,  Holger Rücker

IPC分类号： H01L29/80 ,  H01L31/112

CPC分类号： H01L21/82285 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0826

摘要： A complementary BiCMOS semiconductor device comprises a substrate of a first conductivity type and a number of active regions which are provided therein and which are delimited in the lateral direction by shallow field insulation regions, in which vertical npn-bipolar transistors with an epitaxial base are arranged in a first subnumber of the active regions and vertical pnp-bipolar transistors with an epitaxial base are arranged in a second subnumber of the active regions, wherein either one transistor type or both transistor types have both a collector region and also a collector contact region in one and the same respective active region. To improve the high-frequency properties exclusively in a first transistor type in which the conductivity type of the substrate is identical to that of the collector region, an insulation doping region is provided between the collector region and the substrate.

摘要翻译： 互补BiCMOS半导体器件包括第一导电类型的衬底和设置在其中的多个有源区，并且通过浅场绝缘区在横向上限定，其中布置有具有外延基底的垂直npn双极晶体管 在有源区的第一子数目和具有外延基极的垂直pnp双极晶体管布置在有源区的第二子数目中，其中一个晶体管类型或两个晶体管类型都具有集电极区和集电极接触区 同一个相同的活跃区域。 为了提高专用于基板的导电类型与集电极区域的导电类型相同的第一晶体管类型的高频特性，在集电极区域和基板之间设置绝缘掺杂区域。

公开(公告)号：US07307336B2

公开(公告)日：2007-12-11

申请号：US10497827

申请日：2002-12-06

申请人： Karl-Ernst Ehwald ,  Alexander Fox ,  Dieter Knoll ,  Bernd Heinemann ,  Steffen Marschmayer ,  Katrin Blum

发明人： Karl-Ernst Ehwald ,  Alexander Fox ,  Dieter Knoll ,  Bernd Heinemann ,  Steffen Marschmayer ,  Katrin Blum

IPC分类号： H01L27/102

CPC分类号： H01L29/66242 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/7378

摘要： The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region (1) which is arranged in parallel relationship to the surface of the semiconductor substrate (2) and a second substantially polycrystalline and highly doped region (3) of the same conductivity type which is arranged in perpendicular relationship to the substrate surface and encloses the first region at all sides and that said second region, at least at one side but preferably at all four sides, is conductingly connected to a third, preferably highly doped or metallically conducting, high temperature-resistant polycrystalline layer (4) which is arranged in parallel relationship to the surface of the semiconductor substrate and forms or includes the outer base contact to a metallic conductor track system.

摘要翻译： 本发明涉及一种具有外延生长的基极和自定位发射极的双极晶体管，由此该基极由与半导体衬底（2）的表面平行关系设置的第一基本单晶外延区（1）形成，以及 相同导电类型的第二基本上多晶和高度掺杂的区域（3），其被布置成与衬底表面成垂直的关系，并且在所有侧面包围第一区域，并且所述第二区域至少在一侧，但优选地全部为四个 侧面与第三，优选高度掺杂或金属导电的耐高温多晶层（4）导电连接，该多晶层与半导体衬底的表面平行地布置，并形成或包括与金属导体 轨道系统

公开(公告)号：US20050006724A1

公开(公告)日：2005-01-13

申请号：US10497827

申请日：2002-12-06

申请人： Karl-Ernst Ehwald ,  Alexander Fox ,  Dieter Knoll ,  Bernd Heinemann ,  Steffen Marschmayer ,  Katrin Blum

发明人： Karl-Ernst Ehwald ,  Alexander Fox ,  Dieter Knoll ,  Bernd Heinemann ,  Steffen Marschmayer ,  Katrin Blum

IPC分类号： H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/737 ,  H01L27/082 ,  H01L27/102 ,  H01L29/70

CPC分类号： H01L29/66242 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/7378

摘要： The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region (1) which is arranged in parallel relationship to the surface of the semiconductor substrate (2) and a second substantially polycrystalline and highly doped region (3) of the same conductivity type which is arranged in perpendicular relationship to the substrate surface and encloses the first region at all sides and that said second region, at least at one side but preferably at all four sides, is conductingly connected to a third, preferably highly doped or metallically conducting, high temperature-resistant polycrystalline layer (4) which is arranged in parallel relationship to the surface of the semiconductor substrate and forms or includes the outer base contact to a metallic conductor track system.

摘要翻译： 本发明涉及一种具有外延生长的基极和自定位发射极的双极晶体管，由此该基极由与半导体衬底（2）的表面平行关系设置的第一基本单晶外延区（1）形成，以及 相同导电类型的第二基本上多晶和高度掺杂的区域（3），其被布置成与衬底表面成垂直的关系，并且在所有侧面包围第一区域，并且所述第二区域至少在一侧，但优选地全部为四个 侧面与第三，优选高度掺杂或金属导电的耐高温多晶层（4）导电连接，该多晶层与半导体衬底的表面平行地布置，并形成或包括与金属导体 轨道系统